CONTROLE DU PROCESSUS TECHNOLOGIQUE DE PRODUCTION DE JONCTIONS P-N EPITAXIQUE ET EPITAXIQUE-PLANARSBUJKO LD; GOJDENKO PP; GURSKIJ LJ et al.1974; VESCI AKAD. NAVUK B.S.S.R., FIZ.-TEKH. NAVUK; S.S.S.R.; DA. 1974; NO 2; PP. 100-104; BIBL. 4 REF.Article

SUR LES PROPRIETES D'ELECTROLUMINESCENCE DE L'ARSENIURE DE GALLIUMSPIVAK VS.1971; TRUDY MOSKOV. ENERGET. INST.; S.S.S.R.; DA. 1971; NO 94; PP. 117-119; BIBL. 2 REF.Serial Issue

ETUDE DU RETARD A L'ETABLISSEMENT DE L'ELECTROLUMINESCENCE D'UNE STRUCTURE PN, ET DE SA RELATION AVEC LA CAPACITE DE JONCTIONTSARENKOV BV; IMENKOV AN; POPOV IV et al.1972; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1972; VOL. 6; NO 12; PP. 2364-2369; BIBL. 5 REF.Serial Issue

ETUDE DE LA DISPERSION DE LA CAPACITE DE BARRIERE DES DIODES AU SILICIUM P TRES RESISTIF A IMPURETES PROFONDESDMITRENKO NN; KURILO PM; LITOVCHENKO PG et al.1974; POLUPROVODN. TEKH. MIKROELEKTRON. U.S.S.R.; S.S.S.R.; DA. 1974; NO 17; PP. 24-29; BIBL. 6 REF.Article

PHOTOSENSITIVE TUNNEL JUNCTIONS AND PHOTOSENSITIVE GRANULAR FILMS WITH TE OR SE BARRIERS.TSUBOI T.1976; PHYS. LETTERS, A; NETHERL.; DA. 1976; VOL. 56; NO 6; PP. 472-474; BIBL. 10 REF.Article

EPITAXIAL SILICON P-N JUNCTIONS ON POLYCRYSTALLINE "RIBBON" SUBSTRATES.KRESSEL H; ROBINSON P; MCFARLANE SH et al.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 25; NO 4; PP. 197-199; BIBL. 3 REF.Article

JONCTIONS P-N DIFFUSEES DANS LE CARBURE DE SILICIUM CUBIQUEALTAJSKIJ YU M; ZUEV VL; KALABUKHOV IP et al.1972; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOELEKTRON.; S.S.S.R.; DA. 1972; VOL. 15; NO 9; PP. 1166-1169; BIBL. 7 REF.Serial Issue

INERTIE D'UN "FILAMENT" DE COURANT ET INFLUENCE DE REACTIONS EXTERIEURES SUR SA STABILITE LORS DE LA DISRUPTION SECONDAIRE DE JONCTIONS P-NVALATSKA K; VISHNYAUSKAS YU; MACHYULAJTIS CH et al.1979; LITOV. FIZ. SB.; ISSN 0024-2969; SUN; DA. 1979; NO 4; PP. 533-541; ABS. LIT/ENG; BIBL. 6 REF.Article

SIMPLE RELATIONSHIP BETWEEN THE BREAKDOWN VOLTAGE, CONCENTRATION, AND JUNCTION DEPTH FOR DIFFUSED PN JUNCTIONSRANG T.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 72; NO 1; PP. K117-K119; BIBL. 13 REF.Article

NEGATIVE KRUEMMUNG DER KAPAZITAETS-SPANNUNGS-KENNLINIE BEI HYPERABRUPTEN UBERGAENGEN = COURBURE NEGATIVE DE LA CARACTERISTIQUE CAPACITE-TENSION DANS LE CAS DE JONCTIONS PN HYPERABRUPTES1972; FREQUENZ; DTSCH.; DA. 1972; VOL. 26; NO 8; PP. 224-226; ABS. ANGL.; BIBL. 1 REF.Serial Issue

DEEP LEVELS IN GAPOKUNO Y; SUTO K; NISHIZAWA JI et al.1973; J. APPL. PHYS.; U.S.A.; DA. 1973; VOL. 44; NO 2; PP. 832-836; BIBL. 17 REF.Serial Issue

CALCUL DE LA CAPACITE DE BARRIERE D'UNE JONCTION P.N A NIVEAUX DE PIEGEAGE PROFONDS, OBTENUE PAR DIFFUSIONBERMAN LS.1972; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1972; VOL. 6; NO 12; PP. 2375-2379; BIBL. 16 REF.Serial Issue

EIN MOEGLICHES MODELL DES STOSSRAUSCHENS IN PN-UEBERGAENGEN = UN MODELE POSSIBLE POUR LE BRUIT D'ECLATEMENT DANS DES JONCTIONS P-NEIGLER H; GAEBEL H.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 61; NO 2; PP. 647-652; ABS. ENG; BIBL. 16 REF.Article

TUNNELING JUNCTION AS AN OPEN SYSTEM NORMAL TUNNELING.ONO Y.1978; PHYSICA A; PAYS-BAS; DA. 1978; VOL. 90; NO 2; PP. 342-350; BIBL. 24 REF.Article

DEPLETION-REGION WIDTH OF P-N JUNCTION UNDER HIGH FORWARD-BIAS CONDITIONSJAIN LC; GARUD GN.1979; PROC. INSTIT. ELECTR. ENGRS; GBR; DA. 1979; VOL. 126; NO 5; PP. 361-364; BIBL. 10 REF.Article

A COMPUTER ALGORITHM FOR ACCURATE AND REPEATABLE PROFILE ANALYSIS USING ANODIZATION AND STRIPPING OF SILICON.PLUNKETT JC; STONE JL; LEU A et al.1977; SOLID-STATE ELECTRON; G.B.; DA. 1977; VOL. 20; NO 5; PP. 447-453; BIBL. 21 REF.Article

COMPUTER ALGORITHM FOR THE BUILT-IN VOLTAGE OF THE LINEARLY GRADED JUNCTIONSJAIN LC.1980; COMPUT. ELECTR. ENG.; ISSN 0045-7906; USA; DA. 1980; VOL. 7; NO 3; PP. 201-204; BIBL. 6 REF.Article

BREAKDOWN WALKOUT IN PLANAR P-N JUNCTIONSSARASWAT KC; MEINDL JD.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 6; PP. 813-819; BIBL. 10 REF.Article

CHARACTERIZATION OF SPACE-CHARGE PROPERTIES OF LINEARLY GRADED P-N JUNCTION BY AN APPROXIMATE "REGIONAL" ANALYSIS METHOD.SIRSI RM; BOOTHROYD AR.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 3; PP. 348-353; BIBL. 6 REF.Article

ELECTROLUMINESCENCE DES FONCTIONS P-N A BASE DE GAAS_1-XP_X, AL_XGA_1-XAS EN REGIME DE CLAQUAGE PAR AVALANCHEMULYUKIN NV; PRONIN BV.1974; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1974; VOL. 8; NO 7; PP. 1335-1339; BIBL. 12 REF.Article

OXYGEN PRECIPITATION EFFECTS ON SI N⁺-P JUNCTION LEAKAGE BEHAVIORCHAKRAVARTI SN; GARBARINO PL; MURTY K et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 7; PP. 581-583; BIBL. 8 REF.Article

THE DIFFUSION POTENTIAL OF P-N JUNCTIONSVAN DER ZIEL A.1980; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 23; NO 9; PP. 997Article

ETUDE DU CLAQUAGE ELECTRIQUE DES JONCTIONS P-N, DIFFUSEES, AU GAASGAGKAEVA VV; MASHNIN SV.1978; RADIOTEKH. I ELEKTRON.; S.S.S.R.; DA. 1978; VOL. 23; NO 6; PP. 1241-1246; BIBL. 8 REF.Article

INTERCELLULAR JUNCTIONS OF ORAL EPITHELIUM. II. ULTRASTRUCTURAL CHANGES IN RAT BUCCAL EPITHELIUM INDUCED BY TRYPSIN DIGESTION.SHIMONO M; CLEMENTI F.1977; J. ULTRASTRUCT. RES.; U.S.A.; DA. 1977; VOL. 59; NO 1; PP. 101-112; BIBL. 19 REF.Article

THE THEORY AND APPLICATION OF A SIMPLE ETCH CONTOUR FOR NEAR IDEAL BREAKDOWN VOLTAGE IN PLANE AND PLANAR P-N JUNCTIONS.TEMPLE VAK; ADLER MS.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 8; PP. 950-955; BIBL. 7 REF.Article