PREDICTION OF AVALANCHE BREAKDOWN VOLTAGE IN SILICON STEP JUNCTIONS.NUTTALL KI; NIELD MW.1974; INTERNATION. J. ELECTRON.; G.B.; DA. 1974; VOL. 37; NO 3; PP. 295-309; BIBL. 19 REF.Article

CARRIER HEATING EFFECTS IN JUNCTIONS AT VERY LOW CURRENTSBERZ F.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 9; PP. 1067-1071; BIBL. 6 REF.Serial Issue

THEORY OF THE ENERGY-BAND LINEUP AT AN ABRUPT SEMICONDUCTOR HETEROJUNCTION.FRENSLEY WR; KROEMER H.1977; PHYS. REV., B; U.S.A.; DA. 1977; VOL. 16; NO 6; PP. 2642-2652; BIBL. 34 REF.Article

MULTIPLICATION FACTORS AND BREAKDOWN VOLTAGES OF N⁺-P AND P⁺-N ABRUPT JUNCTIONSSPIRITO P.1973; ELECTRON. LETTERS; G.B.; DA. 1973; VOL. 9; NO 16; PP. 367-369; BIBL. 8 REF.Serial Issue

NEGATIVE KRUEMMUNG DER KAPAZITAETS-SPANNUNGS-KENNLINIE BEI HYPERABRUPTEN UBERGAENGEN = COURBURE NEGATIVE DE LA CARACTERISTIQUE CAPACITE-TENSION DANS LE CAS DE JONCTIONS PN HYPERABRUPTES1972; FREQUENZ; DTSCH.; DA. 1972; VOL. 26; NO 8; PP. 224-226; ABS. ANGL.; BIBL. 1 REF.Serial Issue

THRESHOLD ENERGY EFFECT ON AVALANCHE BREAKDOWN VOLTAGE IN SEMICONDUCTOR JUNCTIONS.OKUTO Y; CROWELL CR.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 2; PP. 161-168; BIBL. 14 REF.Article

R-I PROFILING: A NEW TECHNIQUE FOR MEASURING SEMICONDUCTOR DOPING PROFILES.GLOVER GH; TANTRAPORN W.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 25; NO 6; PP. 348-349; BIBL. 11 REF.Article

A SIMPLE LINEARIZED VCOSCHLEGEL A; SZABO L.1980; ARCH. ELEKTRON. UEBERTRAG.-TECH.; DEU; DA. 1980; VOL. 34; NO 7-8; PP. 342-344; ABS. GER; BIBL. 5 REF.Article

DETERMINATION OF AN INITIAL MESH FOR COMPUTER SIMULATION OF H-ABRUPT DEVICESBENNETT RJ; THOMA KA.1981; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 20; PP. 747-748; BIBL. 6 REF.Article

ORIENTATION DEPENDENCE OF BREAKDOWN VOLTAGE IN GAASLEE MH; SZE SM.1980; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 23; NO 9; PP. 1007-1009; BIBL. 5 REF.Article

AN ANALYTICAL EXPRESSION FOR THE MULTIPLICATION FACTOR M IN SEMICONDUCTORS WITH EQUAL IONIZATION COEFFICIENTSSPIRITO P.1972; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1972; VOL. 19; NO 8; PP. 951-953; BIBL. 10 REF.Serial Issue

Interface connection rules for effective-mass wave functions at an abrupt heterojunction between two different semiconductorsQI-GAO ZHU; KROEMER, H.Physical review. B, Condensed matter. 1983, Vol 27, Num 6, pp 3519-3527, issn 0163-1829Article

TEMPERATURE DEPENDENCE OF AVALANCHE BREAKDOWN VOLTAGE IN SI P-N JUNCTIONS.KAJIYAMA K; KANBE H.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 6; PP. 2744-2745; BIBL. 3 REF.Article

MAXIMIZATION OF THE OUTPUT POWER IN RESONANT FREQUENCY MULTIPLIERS WITH IDEAL ABRUPT JUNCTION DIODESPRICE GB; KHAN PJ.1981; PROC. IEEE; ISSN 0018-9219; USA; DA. 1981; VOL. 69; NO 4; PP. 476-478; BIBL. 5 REF.Article

IMPROVED APPROXIMATE ANALYTIC CHARGE DISTRIBUTIONS FOR ABRUPT P-N JUNCTIONSSHIRTS RB; GORDON RG.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 4; PP. 2840-2847; BIBL. 15 REF.Article

A MATHEMATICAL STUDY OF SPACE-CHARGE LAYER CAPACITANCE FOR AN ABRUPT P-N SEMICONDUCTOR JUNCTION.KENNEDY DP.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 4; PP. 311-319; BIBL. 22 REF.Article

THE FORWARD BIASED, ABRUPT P-N JUNCTIONGUCKEL H; DEMIRKOL A; THOMAX D et al.1982; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 2; PP. 105-113; BIBL. 26 REF.Article

SELF-CONSISTENT CALCULATION OF THE ELECTRONIC STRUCTURE AT AN ABRUPT GAAS-GE INTERFACE.BARAFF GA; APPELBAUM JA; HAMANN DR et al.1977; PHYS. REV. LETTERS; U.S.A.; DA. 1977; VOL. 38; NO 5; PP. 237-240; BIBL. 11 REF.Article

SEMICONDUCTOR DIODES FOR RF APPLICATIONS.HOWARD NR.1977; ELECTRON. ENGNG; G.B.; DA. 1977; VOL. 49; NO 598; PP. 68-69Article

VARIABILITY STUDY AND DESIGN CONSIDERATIONS OF P-N JUNCTION HYPERABRUPT VARACTOR DIODES.KUMAR R; BHATTACHARYYA AB.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 10; PP. 1270-1272; BIBL. 3 REF.Article

ETUDE ANALYTIQUE D'UNE DIODE A JONCTION ABRUPTE EN POLARISATION INVERSEDESTINE J.1979; REV. E; BEL; DA. 1979; VOL. 9; NO 7; PP. 137-146; BIBL. 19 REF.Serial Issue

DISTINCTION BETWEEN AVALANCHE AND TUNNELING BREAKDOWN IN ONE-SIDED ABRUPT JUNCTIONSALBRECHT H; LERACH L.1978; APPL. PHYS.; DEU; DA. 1978; VOL. 16; NO 2; PP. 191-194; BIBL. 19 REF.Article

THE STEP N-N⁺ HOMOJUNCTION.KUZNICKI ZT.1978; BULL. ACAD. POLON. SCI., SCI. TECH.; POL; DA. 1978; VOL. 26; NO 3; PP. 259-268; ABS. RUS; BIBL. 13 REF.Article

LOW-FREQUENCY MULTIPLICATION NOISE IN REFERENCE DIODES FOR SMALL MULTIPLICATION FACTORS.JEVTIC MM; TJAPKIN DA.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 16; PP. 468-470; BIBL. 6 REF.Article

ANALYTICAL SOLUTIONS FOR THE BREAKDOWN VOLTAGE OF ABRUPT CYLINDRICAL AND SPHERICAL JUNCTIONS.JAYANT BALIGA B; GHANDHI SK.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 9; PP. 739-744; BIBL. 13 REF.Article