Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:("JONCTION AVALANCHE")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 5 of 5

  • Page / 1
Export

Selection :

  • and

R-I PROFILING: A NEW TECHNIQUE FOR MEASURING SEMICONDUCTOR DOPING PROFILES.GLOVER GH; TANTRAPORN W.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 25; NO 6; PP. 348-349; BIBL. 11 REF.Article

AN ANALYTICAL EXPRESSION FOR SMALL-SIGNAL IMPEDANCE OF A P-N JUNCTION AVALANCHE DIODE HAVING UNEQUAL IONIZATION RATES & DRIFT VELOCITIES FOR HOLES & ELECTRONSPAL BB; ROY SK.1972; INDIAN J. PURE APPL. PHYS.; INDIA; DA. 1972; VOL. 10; NO 3; PP. 192-196; BIBL. 14 REF.Serial Issue

THEORETICAL MODEL FOR CALCULATION OF BREAKDOWN VOLTAGE OF IMPLANTED P-N JUNCTIONS.KERESZTES P; MOHACSI T; HEGEDUS A et al.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 5; PP. 415-418; BIBL. 10 REF.Article

STUDIES OF LOCALIZED CHARGE INJECTION IN SURFACE AVALANCHED PN JUNCTIONS.AMANTEA R; MULLER RS.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; SUPPL. 1; PP. 205-210; BIBL. 13 REF.; (CONF. SOLID STATE DEVICES. 8. PROC.; TOKYO; 1976)Conference Paper

AVALANCHE-INJECTED HOLE CURRENT IN SIO2VERWEY JF.1972; APPL. PHYS. LETTERS; U.S.A.; DA. 1972; VOL. 21; NO 9; PP. 417-419; BIBL. 16 REF.Serial Issue

  • Page / 1