Optimization of a very cost-effective high voltage p-channel transistor implemented in a standard twin-tub CMOS technologyPEREZ-TOMAS, A; JORDA, X; GODIGNON, P et al.Microelectronic engineering. 2005, Vol 77, Num 2, pp 158-167, issn 0167-9317, 10 p.Article

Low loss, large area 4.5 kV 4H-SiC PIN diodes with reduced forward voltage driftBROSSELARD, P; PEREZ-TOMAS, A; HASSAN, J et al.Semiconductor science and technology. 2009, Vol 24, Num 9, issn 0268-1242, 095004.1-095004.7Article

Behaviour of 1.2 kV SiC JBS diodes under repetitive high power stressBANU, V; BROSSELARD, P; JORDA, X et al.Microelectronics and reliability. 2008, Vol 48, Num 8-9, pp 1444-1448, issn 0026-2714, 5 p.Conference Paper

IGBT gate driver IC with full-bridge output stage using a modified standard CMOS processPEREZ-TOMAS, A; JORDA, X; GODIGNON, P et al.Microelectronics journal. 2004, Vol 35, Num 8, pp 659-666, issn 0959-8324, 8 p.Article

Dynamic latch-up in advanced LIGBT structures at high operating temperaturesVELLVEHI, M; JORDA, X; FLORES, D et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 304-308, issn 0921-5107Conference Paper

Study of recoil implantation technique for deep low doped junction formation with aluminumGODIGNON, P; MORVAN, E; MONTSERRAT, J et al.Microelectronic engineering. 1998, Vol 40, Num 2, pp 99-109, issn 0167-9317Article

Physically based analysis of electrical frequency response of passive microelectronic circuits by heterodyne lock-in thermal meansLEON, J; PERPINA, X; ALTET, J et al.Journal of physics. D, Applied physics (Print). 2013, Vol 46, Num 44, issn 0022-3727, 445501.1-445501.11Article

Laser beam deflection-based perimeter scanning of integrated circuits for local overheating locationPERPINA, X; JORDA, X; ALTET, J et al.Journal of physics. D, Applied physics (Print). 2009, Vol 42, Num 1, issn 0022-3727, 012002.1-012002.4Article

High-frequency ultrasonic atomization with pulsed excitationLOZANO, A; AMAVEDA, H; BARRERAS, F et al.Journal of fluids engineering. 2003, Vol 125, Num 6, pp 941-945, issn 0098-2202, 5 p.Article

Temperature effects on the ruggedness of SiC Schottky diodes under surge currentLEON, J; PERPINA, X; BANU, V et al.Microelectronics and reliability. 2014, Vol 54, Num 9-10, pp 2207-2212, issn 0026-2714, 6 p.Conference Paper

Design methodologies for reliability of SSL LED boards : THERMAL, MECHANICAL AND MULTI-PHYSICS SIMULATION AND EXPERIMENTS IN MICRO-ELECTRONICS AND MICRO-SYSTEMSJAKOVENKO, J; FORMANEK, J; GASSE, A et al.Microelectronics and reliability. 2013, Vol 53, Num 8, pp 1076-1083, issn 0026-2714, 8 p.Conference Paper

Thermal cycling analysis of high temperature die-attach materialsNAVARRO, L. A; PERPINA, X; VELLVEHI, M et al.Microelectronics and reliability. 2012, Vol 52, Num 9-10, pp 2314-2320, issn 0026-2714, 7 p.Conference Paper

Design considerations for 6.5 kV IGBT devicesVELLVEHI, M; FLORES, D; JORDA, X et al.Microelectronics journal. 2004, Vol 35, Num 3, pp 269-275, issn 0959-8324, 7 p.Conference Paper

Resonating cantilever mass sensor with mechanical on-plane excitationTEVA, J; ABADAL, G; JORDA, X et al.SPIE proceedings series. 2003, pp 353-363, isbn 0-8194-4976-8, 11 p.Conference Paper

Double gate MOS-thyristor devices with and without forward bias safe operating area capability : the insulated base MOS-controlled thyristor and the dual MOS-gated thyristorFLORES, D; GODIGNON, P; JORDA, X et al.Microelectronics journal. 1999, Vol 30, Num 6, pp 591-597, issn 0959-8324Conference Paper

Enhanced power cycling capability of SiC Schottky diodes using press pack contactsBANU, V; GODIGNON, P; PERPINA, X et al.Microelectronics and reliability. 2012, Vol 52, Num 9-10, pp 2250-2255, issn 0026-2714, 6 p.Conference Paper

Low-cost and versatile thermal test chip for power assemblies assessment and thermometric calibration purposesJORDA, X; PERPINA, X; VELLVEHI, M et al.Applied thermal engineering. 2011, Vol 31, Num 10, pp 1664-1672, issn 1359-4311, 9 p.Article

Hot-Spot Detection in Integrated Circuits by Substrate Heat-Flux SensingPERPINA, X; ALTET, J; JORDA, X et al.IEEE electron device letters. 2008, Vol 29, Num 10, pp 1142-1144, issn 0741-3106, 3 p.Article

An analytical model to predict the short-circuit thermal failure in SOL LDMOS with linear doping profileROIG, J; FLORES, D; JORDA, X et al.International conference on microelectronics. 2004, isbn 0-7803-8166-1, 2Vol, vol 1, 137-140Conference Paper

Optimal layout for 6H-SiC VJFET controlled current limiting deviceTOURNIER, D; JORDA, X; GODIGNON, Ph et al.Diamond and related materials. 2003, Vol 12, Num 3-7, pp 1220-1223, issn 0925-9635, 4 p.Conference Paper

Optimisation of junction termination extension for the development of a 2000 V planar 4H-SiC diodePEREZ, R; MESTRES, N; JORDA, X et al.Diamond and related materials. 2003, Vol 12, Num 3-7, pp 1231-1235, issn 0925-9635, 5 p.Conference Paper

Thermal resistance investigations on new leadframe-based LED packages and boards : THERMAL, MECHANICAL AND MULTI-PHYSICS SIMULATION AND EXPERIMENTS IN MICRO-ELECTRONICS AND MICRO-SYSTEMSPARDO, B; GASSE, A; FARGEIX, A et al.Microelectronics and reliability. 2013, Vol 53, Num 8, pp 1084-1094, issn 0026-2714, 11 p.Conference Paper

Design for reliability of solid state lighting systemsPERPINA, X; WERKHOVEN, R; JAKOVENKO, J et al.Microelectronics and reliability. 2012, Vol 52, Num 9-10, pp 2294-2300, issn 0026-2714, 7 p.Conference Paper

Transmission Fabry-Pérot interference thermometry for thermal characterization of microelectronic devicesPERPINA, X; JORDA, X; MADRID, F et al.Semiconductor science and technology. 2006, Vol 21, Num 12, pp 1537-1542, issn 0268-1242, 6 p.Article

A calibration procedure for an IIR-LD equipment using a thermal test chip and an analitical modelPERPINA, X; JORDA, X; MADRID, F et al.THERMINIC 2004. International workshopIEEE Computer Society. 2004, pp 251-255, isbn 2-84813-036-9, 5 p.Conference Paper