Temperature and field dependence on the photoconductive decay measurements of RF sputtered and CVD grown a-SiJUH TZENG LUE.Physica status solidi. A. Applied research. 1985, Vol 92, Num 2, pp K161-K165, issn 0031-8965Article

Time-resolved reflectivity measurements of RF sputtered a-Si:H alloyJUH TZENG LUE.Physica status solidi. B. Basic research. 1984, Vol 126, Num 2, pp 713-720, issn 0370-1972Article

Design criteria of subnanosecond UV N₂ lasers operating at atmospheric pressureJUH TZENG LUE.IEEE transactions on instrumentation and measurement. 1985, Vol 34, Num 3, pp 436-441, issn 0018-9456Article

Nonlinear optical generation from multiple layers of metal-dielectric filmsJUH-TZENG LUE; CHIEN DAI.Physical review. B, Condensed matter. 1993, Vol 47, Num 20, pp 13653-13658, issn 0163-1829Article

Formation of titanium silicides and their refractive index measurementsKUEN LEE; JUH TZENG LUE.Physics letters. A. 1987, Vol 125, Num 5, pp 271-275, issn 0375-9601Article

A SIMPLE TARGET HOLDER FOR RF SPUTTERING OF NON-MACHINABLE MATERIALJUH TZENG LUE.1982; BACUUM; ISSN 0042-207X; GBR; DA. 1982; VOL. 32; NO 6; PP. 363-365; BIBL. 5 REF.Article

THE ANNEALING OF BF₂⁺ IMPLANTED SILICON BY A SHORT PULSE FLASH LAMPJUH TZENG LUE.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 1; PP. 73-76; BIBL. 13 REF.Article

AN AUTOMATIC THIN-FILM THICKNESS INDICATOR IMPLEMENTED WITH A Z-80 MICROCOMPUTERJUH TZENG LUE.1982; VACUUM; ISSN 0042-207X; GBR; DA. 1982; VOL. 32; NO 12; PP. 711-712; BIBL. 7 REF.Article

JUNCTION IMPEDANCE MEASUREMENTS OF DIODES BY A SIMPLIFIED LOCK-IN AMPLIFIER.JUH TZENG LUE.1977; I.E.E.E. TRANS. INSTRUMENT. MEASUR.; U.S.A.; DA. 1977; VOL. 26; NO 4; PP. 415-419; BIBL. 5 REF.Article

THEORY OF SCHOTTKY BARRIER HEIGHTS OF AMORPHOUS MIS SOLAR CELLSJUH TZENG LUE.1982; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 9; PP. 869-874; BIBL. 17 REF.Article

A MULTICHANNEL FLASH TUBE IMPLEMENTED FOR LARGE AREA ANNEALING OF ION IMPLANTED SEMICONDUCTORSJUH TZENG LUE.1982; VACUUM; ISSN 0042-207X; GBR; DA. 1982; VOL. 32; NO 12; PP. 713-718; BIBL. 13 REF.Article

WAVELENGTH-MODULATING SPECTROMETER IMPLEMENTED WITH PHOTOVOLTAIC PHOTODIODESJUH TZENG LUE.1979; J. PHYS. E; ISSN 0022-3735; GBR; DA. 1979; VOL. 12; NO 9; PP. 833-836; BIBL. 8 REF.Article

VOLTAGE READONT OF A TEMPERATURE-CONTROLLED THIN FILM THICKNESS MONITOR.JUH TZENG LUE.1977; J. PHYS. E; G.B.; DA. 1977; VOL. 10; NO 2; PP. 161-163; BIBL. 6 REF.Article

A SIMPLE CIRCUIT OF A CRYSTAL OSCILLATOR AND ITS APPLICATION TO A HIGH-RESOLUTION NMR SPECTROMETER.JUH TZENG LUE.1976; I.E.E.E. TRANS. INSTRUMENT. MEASUR.; U.S.A.; DA. 1976; VOL. 25; NO 1; PP. 76-78; BIBL. 4 REF.Article

Thermal fluctuation of the order parameter symmetry in high T_C superconductors revealed from the penetration depth measurementLI JUI CHEN; JUH TZENG LUE.Solid state communications. 1998, Vol 105, Num 3, pp 155-159, issn 0038-1098Article

Spin-glass states exhibited by silver nano-particles prepared by sol-gel methodSHAW-KWEN MA; JUH TZENG LUE.Solid state communications. 1996, Vol 97, Num 11, pp 979-983, issn 0038-1098Article

The detection of optical second harmonic generation from high Tc YBa₂Cu₃O₇ epitaxial thin filmsKUANG YAO LO; JUH TZENG LUE.IEEE photonics technology letters. 1994, Vol 6, Num 11, pp 1362-1364, issn 1041-1135Article

Silicide doping technology in formation of TiSi₂/n⁺p shallow junction by salicide processJENG-RERN YANG; JUH TZENG LUE.Journal of applied physics. 1989, Vol 65, Num 3, pp 1039-1043, issn 0021-8979, 5 p.Article

Electrical size effects of thin C54-TiSi₂ films grown on silicon substratesJENG-RERN YANG; JUH TZENG LUE.Solid state communications. 1988, Vol 65, Num 12, pp 1613-1616, issn 0038-1098Article

Nb₃Si films with zero resistance T_c at 11.9 K fabricated by sputtering Nb on Si substratesLI JUI CHEN; JUH TZENG LUE.Materials letters (General ed.). 1997, Vol 30, Num 5-6, pp 395-399, issn 0167-577XArticle

High-order contributions to the electric field profile distributions in thin metallic filmsYANN-SHJH HOR; JUH TZENG LUE.Surface science. 1994, Vol 304, Num 3, pp 375-382, issn 0039-6028Article

The optical second-harmonic generation from porous siliconKUANG-YAO LO; JUH TZENG LUE.IEEE photonics technology letters. 1993, Vol 5, Num 6, pp 651-653, issn 1041-1135Article

Screening of the effect of delocalization on disordered transition metals by including the d states in the conduction band hybridizationJUH TZENG LUE; HSIU-HSIENG CHEN.Journal of physics. Condensed matter (Print). 1991, Vol 3, Num 34, pp 6589-6596, issn 0953-8984Article

Second harmonic generation with focused broad-band and high-order transverse mode lasersCHIEN JEN SUN; JUH TZENG LUE.IEEE journal of quantum electronics. 1988, Vol 24, Num 1, pp 113-117, issn 0018-9197Article

Laminant distribution of hydrogenated bonds in amorphous silicon deposited by RF sputteringJUH TZENG LUE; SEN-YEN SHAW.Physica status solidi. A. Applied research. 1986, Vol 95, Num 1, pp K75-K80, issn 0031-8965Article