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au.\*:("JULEFF EM")

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A MODEL TO EXPLAIN THE OBSERVED GEOMETRY DISPLACEMENT AND DISTORSION DURING EPITAXY ON (111) SILICONJULEFF EM.1973; MICROELECTRONICS; G.B.; DA. 1973; VOL. 4; NO 4; PP. 18-24; BIBL. 2 REF.Serial Issue

PURITY REQUIREMENTS FOR CHEMICALS IN SEMICONDUCTOR PROCESSING.JULEFF EM.1976; MICROELECTRONICS; G.B.; DA. 1976; VOL. 7; NO 4; PP. 17-21; BIBL. 23 REF.Article

PROJECTION MASK ALIGNMENT; A PRODUCTION TECHNIQUECLARK KG; JULEFF EM.1973; SOLID STATE TECHNOL.; U.S.A.; DA. 1973; VOL. 16; NO 6; PP. 37-41; BIBL. 2 REF.Serial Issue

PURITY OF CHEMICALS FOR SEMICONDUCTOR PROCESSING.LAFEUILLE D; ROCHE D; JULEFF EM et al.1975; SOLID STATE TECHNOL.; U.S.A.; DA. 1975; VOL. 18; NO 1; PP. 43-48; BIBL. 23 REF.Article

ETUDE DES DEFAUTS DE STRUCTURE INTRODUITS PAR LES PROCESSUS D'ELABORATION DES DISPOSITIFS A SEMICONDUCTEURS. CORRELATION AVEC LES PERFORMANCESLAFEUILLE D; JULEFF EM; PECCOUD L et al.1972; DGRST-71 7 2617; FR.; DA. 1972; PP. (42 P.); H.T. 47; BIBL. 2 P. 1/2; (RAPP. FINAL, ACTION CONCERTEE: COM. CIRCUITS ET COMPOSANTS MICROMINIATURISES). 2 FASCReport

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