Proceedings of the Eighth International Conference on Defects - Recognition, Imaging and Physics in Semiconductors, Narita, Japan, September 15-18, 1999OGAWA, Tomoya; TAJIMA, Michio.Journal of crystal growth. 2000, Vol 210, Num 1-3, issn 0022-0248, 432 p.Conference Proceedings

Life cycle of grown-in defects in silicon as observed by IR-LSTKISSINGER, G; VANHELLEMONT, J.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 7-14, issn 0022-0248Conference Paper

Imaging of hydrogen distribution on solid surfaces by desorption spectroscopyUEDA, K.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 416-420, issn 0022-0248Conference Paper

Excess lateral photo-response caused by technological and constructive defects in the IR-sensitive hybrid microcircuitsVAINER, B. G.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 356-360, issn 0022-0248Conference Paper

Analysis of grown-in defects in Czochralski SiITSUMI, M.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 1-6, issn 0022-0248Conference Paper

Investigations on the low-energy proton-induced defects on Ti/N-GaAs Schottky barrier diode parametersJAYAVEL, P; KUMAR, J.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 268-272, issn 0022-0248Conference Paper

Complex defects in electron-irradiated ZnSSHONO, Y; OKA, T.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 278-282, issn 0022-0248Conference Paper

Microscopic observation of strain induced in heteroepitaxial layers with reflection type of infrared polariscopeYAMADA, M; TAO CHU.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 102-106, issn 0022-0248Conference Paper

A quantitative approach to Makyoh (magic-mirror) topographyRIESZ, F.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 370-374, issn 0022-0248Conference Paper

Self-formation of ultra small structures on vicinal Si substrates for nano-device arrayHANAJIRI, T; SUGANO, T.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 85-89, issn 0022-0248Conference Paper

Concentration of point defects changed by thermal stress in growing CZ silicon crystal : effect of the growth rateTANAHASHI, K; KIKUCHI, M; HIGASHINO, T et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 45-48, issn 0022-0248Conference Paper

Analysis of peculiar structural defects created in GaAs by diffusion of copperFRIGERI, C; WEYHER, J. L; MÜLLER, S et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 177-181, issn 0022-0248Conference Paper

Cleavage of thin films for X-HREM study of interface quality in heterostructuresVOROB'EV, A. B; GUTAKOVSKY, A. K; PRINZ, V. Ya et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 182-186, issn 0022-0248Conference Paper

Defect identification in homoepitaxial- and ELO-grown GaN layers using bound-exciton Zeeman spectroscopiesKURAI, S; YAMADA, Y; TAGUCHI, T et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 216-219, issn 0022-0248Conference Paper

Application of one-bond-type migration to interstitialcy-type self-interstitial and phosphorus in siliconYOSHIDA, M; KAMIURA, Y; TSURUNO, R et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 128-131, issn 0022-0248Conference Paper

Classification of etch pits at silicon wafer surface using image-processing instrumentAKATSUKA, M; SUEOKA, K; YAMAMOTO, T et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 366-369, issn 0022-0248Conference Paper

Electroluminescence and other diagnostic techniques for the study of hot-electron effects in compound semiconductor devicesZANONI, E; MENEGHESSO, G; MENOZZI, R et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 331-340, issn 0022-0248Conference Paper

Application of the narrow spectral range InAs-FPA-based IR camera for the investigation of the interface voids in silicon wafer bondingVAINER, B. G; KAMAEV, G. N; KURISHEV, G. L et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 351-355, issn 0022-0248Conference Paper

Structural analysis of GaN layers with columnar structures grown by hydrogen-assisted ECR-MBEARAKI, T; CHIBA, Y; NANISHI, Y et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 162-166, issn 0022-0248Conference Paper

X-ray scattering topographic observation of ZnSe and ZnTe bulk crystalsSHINBARA, M; SUZUKI, Y; CHIKAURA, Y et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 187-192, issn 0022-0248Conference Paper

Investigation on grown-in defects in CZ-Si crystal under slow pulling rateFURUKAWA, J; TANAKA, H; NAKADA, Y et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 26-30, issn 0022-0248Conference Paper

Change in shape of oxygen precipitate grown by thermal annealingSAKAI, K; YAMAGAMI, T; OJIMA, K et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 65-68, issn 0022-0248Conference Paper

Characterization of metastable hydrogen-related defects in n-GaAs by isothermal constant-capacitance-voltage transient spectroscopyTOKUDA, Y; KAMIYA, K; OKUMURA, T et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 260-263, issn 0022-0248Conference Paper

Local lattice strain measurements in semiconductor devices by using convergent-beam electron diffractionTODA, A; IKARASHI, N; ONO, H et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 341-345, issn 0022-0248Conference Paper

Scanning mid-IR-laser microscopy : an efficient tool for materials studies in silicon-based photonics and photovoltaicsASTAFIEV, O. V; KALINUSHKIN, V. P; YURYEV, V. A et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 361-365, issn 0022-0248Conference Paper