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au.\*:("Japanese Association for Crystal Growth")

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ICCG-13/ICVGE-11: Proceedings of the Thirteenth International Conference on Crystal Growth in conjunction with the Eleventh International Conference on Vapor Growth and Epitaxy, Kyoto, Japan, 30 July - 4 August 2001. Part 3HIBIYA, T; MULLIN, J; UWAHA, M et al.Journal of crystal growth. 2002, Vol 237-39, issn 0022-0248, 659 p., 3Conference Proceedings

First-principle calculations for mechanisms of semiconductor epitaxial growthOSHIYAMA, Atsushi.Journal of crystal growth. 2002, Vol 237-39, pp 1-7, issn 0022-0248, 1Conference Paper

Phase field model for phase transformations of multi-phase and multi-component alloysSAKAI, Kazushige.Journal of crystal growth. 2002, Vol 237-39, pp 144-148, issn 0022-0248, 1Conference Paper

Characterization of silicon-on-insulator wafers by photoluminescence under UV light excitationTAJIMA, Michio.Journal of crystal growth. 2002, Vol 237-39, pp 324-329, issn 0022-0248, 1Conference Paper

Microchannel epitaxy: an overviewNISHINAGA, Tatau.Journal of crystal growth. 2002, Vol 237-39, pp 1410-1417, issn 0022-0248, 2Conference Paper

Spectro-ellipsometric monitoring and characterization of the growth of Si/Si1-xGex multiple quantum wellsAKAZAWA, Housei.Journal of crystal growth. 2002, Vol 237-39, pp 393-397, issn 0022-0248, 1Conference Paper

Metalorganic vapor phase epitaxy 1988: proceedings/4th international conference on metal organic vapor phase epitaxy, Hakone, Japon, May 16-20, 1988WATANABE, N; NAKANISI, T; DAPKUS, P. D et al.Journal of crystal growth. 1988, Vol 93, Num 1-4, issn 0022-0248, XVIII-957 pConference Proceedings

ICCG-13/ICVGE-11: Proceedings of the Thirteenth International Conference on Crystal Growth in conjunction with the Eleventh International Conference on Vapor Growth and Epitaxy, Kyoto, Japan, 30 July - 4 August 2001. Part 2HIBIYA, T; MULLIN, J; UWAHA, M et al.Journal of crystal growth. 2002, Vol 237-39, issn 0022-0248, 729 p., 2Conference Proceedings

Defects in epitaxially grown perovskite thin filmsFUJIMOTO, Masayuki.Journal of crystal growth. 2002, Vol 237-39, pp 430-437, issn 0022-0248, 1Conference Paper

Experimental analysis and modeling of melt growth processesMÜLLER, Georg.Journal of crystal growth. 2002, Vol 237-39, pp 1628-1637, issn 0022-0248, 3Conference Paper

Controlling factor of polymorphism in crystallization processKITAMURA, Mitsutaka.Journal of crystal growth. 2002, Vol 237-39, pp 2205-2214, issn 0022-0248, 3Conference Paper

Nitride semiconductors-impact on the future worldAKASAKI, Isamu.Journal of crystal growth. 2002, Vol 237-39, pp 905-911, issn 0022-0248, 2Conference Paper

Growth of GaN and related materials by gas-source molecular-beam epitaxy using uncracked ammonia gasYOSHIDA, Seikoh.Journal of crystal growth. 2002, Vol 237-39, pp 978-982, issn 0022-0248, 2Conference Paper

Simulation on the instability of a solid-liquid interface from a molar flux with a diffuse interface layerKOTAKE, S.Journal of crystal growth. 2002, Vol 237-39, pp 174-177, issn 0022-0248, 1Conference Paper

Metal adsorption induced faceting on a Si(h h m) surface where m/h = 1.4-1.5MINODA, Hiroki.Journal of crystal growth. 2002, Vol 237-39, pp 21-27, issn 0022-0248, 1Conference Paper

Coarsening dynamics in off-critically quenched binary systems under microgravity conditionsENOMOTO, Yoshihisa.Journal of crystal growth. 2002, Vol 237-39, pp 1864-1869, issn 0022-0248, 3Conference Paper

ICCG-13/ICVGE-11: Proceedings of the thirteen International Conference on Crystal Growth in conjuction with the eleventh International Conference on Vapor Growth and Epitaxy, Kyoto, Japan, 30 July-4 August 2001. Part 1HIBIYA, T; MULLIN, J; UWAHA, M et al.Journal of crystal growth. 2002, Vol 237-39, issn 0022-0248, 933 p., 1Conference Proceedings

Effects of rotating magnetic fields on temperature and oxygen distributions in silicon meltKAKIMOTO, K.Journal of crystal growth. 2002, Vol 237-39, pp 1785-1790, issn 0022-0248, 3Conference Paper

High-quality langasite films grown by liquid phase epitaxyKLEMENZ, C.Journal of crystal growth. 2002, Vol 237-39, pp 714-719, issn 0022-0248, 1Conference Paper

Metalorganic vapor phase epitaxial growth of metastable GaAs1-xBix alloyOE, Kunishige.Journal of crystal growth. 2002, Vol 237-39, pp 1481-1485, issn 0022-0248, 2Conference Paper

Report on the meetings of the IOCG Executive Committee, Council and General Assembly held during ICCG-13/ ICVGE-11 in Kyoto, Japan, 30 July-4 August 2001NISHINAGA, T.Journal of crystal growth. 2002, Vol 237-39, pp 2264-2266, issn 0022-0248, 3Conference Paper

The study of impurities effect on the growth and nucleation kinetics of potassium dihydrogen phosphatePODDER, J.Journal of crystal growth. 2002, Vol 237-39, pp 70-75, issn 0022-0248, 1Conference Paper

Octahedral void defects in Czochralski siliconITSUMI, Manabu.Journal of crystal growth. 2002, Vol 237-39, pp 1773-1778, issn 0022-0248, 3Conference Paper

Buoyant-thermocapillary and pure thermocapillary convective instabilities in Czochralski systemsSCHWABE, D.Journal of crystal growth. 2002, Vol 237-39, pp 1849-1853, issn 0022-0248, 3Conference Paper

Epitaxial growth of Se100-xTex alloy films deposited on (100) surfaces of KI and KBrNAGASHIMA, Seiichi.Journal of crystal growth. 2002, Vol 237-39, pp 2055-2060, issn 0022-0248, 3Conference Paper

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