(110) substrates for ZnSe on GaAs heteroepitaxyNARUSAWA, T; NISHIYAMA, F; ZHU, Z et al.Japanese journal of applied physics. 1997, Vol 36, Num 1AB, pp L12-L14, issn 0021-4922, 2Article

A (Pb, La)(Zr, Ti)O₃ (PLZT) polarization-plane rotator with a Buried electrode structure for a mid-infrared electro-optical shutterTANIGUCHI, Y; MURAKAMI, K; KOBAYASHI, H et al.Japanese journal of applied physics. 1997, Vol 36, Num 5A, pp 2709-2714, issn 0021-4922, 1Article

A hybrid-integrated two-dimensional (3 X 24) high-efficiency high-power laser diode arrayNEMOTO, K; OGAWA, M; KOBAYASHI, T et al.Japanese journal of applied physics. 1997, Vol 36, Num 6A, pp 3497-3503, issn 0021-4922, 1Article

A multistate switch with double delta-doped strained-layer quantum wellsGUO, D.-F.Japanese journal of applied physics. 1997, Vol 36, Num 8, pp 5057-5059, issn 0021-4922, 1Article

A novel decagonal quasicrystal in Zn-Mg-Dy systemSATO, T. J; ABE, E; TSAI, A. P et al.Japanese journal of applied physics. 1997, Vol 36, Num 8A, pp L1038-L1039, issn 0021-4922, 2Article

A novel thin-film transistor with vertical offset structureLIN, C.-W; CHANG, C.-Y.Japanese journal of applied physics. 1997, Vol 36, Num 4A, pp 2032-2043, issn 0021-4922, 1Article

A simple graphical method for determining densities and energy levels of donors and acceptors in semiconductor from temperature dependence of majority carrier concentrationMATSUURA, H.Japanese journal of applied physics. 1997, Vol 36, Num 6A, pp 3541-3547, issn 0021-4922, 1Article

A study on the relation between film quality and deposition rate for amorphous silicon films grown by electron cyclotron resonance plasma chemical vapor deposition using H₂/SiH₄KANG, M; KIM, J; LIM, T et al.Japanese journal of applied physics. 1997, Vol 36, Num 8A, pp L986-L988, issn 0021-4922, 2Article

Absorption of CO₂ laser beam in relation to laser cutting processYILBAS, B. S; SUNAR, M; KAHRAMAN, R et al.Japanese journal of applied physics. 1997, Vol 36, Num 5A, pp 2689-2697, issn 0021-4922, 1Article

Agglomeration resistant self-aligned silicide process using N₂ implantation into TiSi₂NISHIYAMA, A; AKASAKA, Y; ISHIKU, Y et al.Japanese journal of applied physics. 1997, Vol 36, Num 6A, pp 3639-3643, issn 0021-4922, 1Article

An X-ray diffraction study on the transition of micro structural defect states with the interchange of solvent and solute in Ti-Zr and Zr-Ti alloysSEN, R; CHATTOPADHYAY, S. K; CHATTERJEE, S. K et al.Japanese journal of applied physics. 1997, Vol 36, Num 1A, pp 364-367, issn 0021-4922, 1Article

An analytical fully-depleted silicon-on-insulator metal-oxide-semiconductor field-effect-transistor model considering the effects of self-heating, source/drain resistance, impact-ionization, and parasitic bipolar junction transistorHU, M.-C; JANG, S.-L; CHEN, Y.-S et al.Japanese journal of applied physics. 1997, Vol 36, Num 5A, pp 2606-2613, issn 0021-4922, 1Article

Anomalous ultrasonic absorption of liposome suspensions in the liquid crystal phaseETOH, A; YAMAMOTO, K; MITAKU, S et al.Japanese journal of applied physics. 1997, Vol 36, Num 5A, pp 2922-2928, issn 0021-4922, 1Article

Application of solid immersion lens to high-resolution photoluminescence imaging of patterned GaAs quantum wellsSASAKI, T; BABA, M; YOSHITA, M et al.Japanese journal of applied physics. 1997, Vol 36, Num 7B, pp L962-L964, issn 0021-4922, 2Article

Behavior of capillary plasmas with different diametersSUEDA, T; KATSUKI, S; AKIYAMA, H et al.Japanese journal of applied physics. 1997, Vol 36, Num 4A, pp 2346-2350, issn 0021-4922, 1Article

Broad-band conductive spectra of polypropylene oxide complexed with LiClO₄FURUKAWA, T; IMURA, M; YURUZUME, H et al.Japanese journal of applied physics. 1997, Vol 36, Num 3A, pp 1119-1125, issn 0021-4922, 1Article

Broadband double-layer antireflection coatings for semiconductor laser amplifiersLEE, J; TANAKA, T; UCHIYAMA, S et al.Japanese journal of applied physics. 1997, Vol 36, Num 1AB, pp L52-L54, issn 0021-4922, 2Article

Calculation of molecular orientational order and Maxwell displacement current of biaxial molecules at the air-liquid interfaceWU, C.-X; IWAMOTO, M.Japanese journal of applied physics. 1997, Vol 36, Num 2, pp 824-828, issn 0021-4922, 1Article

Cellular-automaton circuits using single-electron-tunneling junctionsWU, N.-J; ASAHI, N; AMEMIYA, Y et al.Japanese journal of applied physics. 1997, Vol 36, Num 5A, pp 2621-2627, issn 0021-4922, 1Article

Characterization of polycrystalline Cu(In,Ga)Se₂ thin films produced by rapid thermal processingALBERTS, V; ZWEIGART, S; SCHÖN, J. H et al.Japanese journal of applied physics. 1997, Vol 36, Num 8, pp 5033-5039, issn 0021-4922, 1Article

Characterization of thin bonded silicon-on-insulator structures by the microwave photoconductivity decay methodICHIMURA, M; MAKINO, T; ASAKURA, H et al.Japanese journal of applied physics. 1997, Vol 36, Num 7A, pp L839-L841, issn 0021-4922, 2Article

Charge dissipation on chemically treated thin silicon oxide in airUCHIHASHI, T; NAKANO, A; IDA, T et al.Japanese journal of applied physics. 1997, Vol 36, Num 6A, pp 3755-3758, issn 0021-4922, 1Article

Collisionless heating of electrons by meandering chaos and its application to a low-pressure plasma sourceASAKURA, H; TAKEMURA, K; YOSHIDA, Z et al.Japanese journal of applied physics. 1997, Vol 36, Num 7A, pp 4493-4496, issn 0021-4922, 1Article

Cross section measurements for electron-impact dissociation of C₄F₈ into neutral and ionic radicalsTOYODA, H; IIO, M; SUGAI, H et al.Japanese journal of applied physics. 1997, Vol 36, Num 6A, pp 3730-3735, issn 0021-4922, 1Article

Crystal growth and optical characterization of rare-earth (Re) calcium oxyborate ReCa₄O(BO₃)₃ (Re = Y or Gd) as new nonlinear optical materialIWAI, M; KOBAYASHI, T; FURUYA, H et al.Japanese journal of applied physics. 1997, Vol 36, Num 3A, pp L276-L279, issn 0021-4922, 2Article