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CONTROLE DU PROCESSUS TECHNOLOGIQUE DE PRODUCTION DE JONCTIONS P-N EPITAXIQUE ET EPITAXIQUE-PLANARSBUJKO LD; GOJDENKO PP; GURSKIJ LJ et al.1974; VESCI AKAD. NAVUK B.S.S.R., FIZ.-TEKH. NAVUK; S.S.S.R.; DA. 1974; NO 2; PP. 100-104; BIBL. 4 REF.Article

INFLUENCE DE LA DEFORMATION HETEROGENE SUR LES CARACTERISTIQUES ELECTRIQUES DES JONCTIONS P-N PLANARS EPITAXIQUESKALOSHKIN EH P; KOLESHKO VM.1976; VESCI AKAD. NAVUK B.S.S.R., FIZ.-TEKH. NAVUK; S.S.S.R.; DA. 1976; NO 3; PP. 21-24; BIBL. 7 REF.Article

Etats couplés des solitons dans les jonctions Josephson hétérogènesGAL'PERN, YU. S; FILIPPOV, A. T.ZETF. Pis′ma v redakciû. 1984, Vol 86, Num 4, pp 1527-1543, issn 0044-4510Article

Small area planar Nb/Nb Josephson tunnel junction with hugh current densityTAKAYANAGI, H; KAWAKAMI, T.Japanese journal of applied physics. 1984, Vol 23, Num 1, pp 43-45, issn 0021-4922Article

Distribution du champ magnétique dans des jonctions Josephson bidimensionnellesVABISHCHEVICH, P. N; VASENKO, S. A; LIKHAREV, K. K et al.ZETF. Pis′ma v redakciû. 1984, Vol 86, Num 3, pp 1132-1141, issn 0044-4510Article

Critical current uniformity and stability of Nb/Al-oxide-Nb Josephson junctionsGATES, J. V; WASHINGTON, M. A; GURVITCH, M et al.Journal of applied physics. 1984, Vol 55, Num 5, pp 1419-1421, issn 0021-8979Article

Interaction of niobium counter electrodes with aluminium oxide and rare-earth oxide barriersRONAY, M; LATTA, E. E.Physical review. B, Condensed matter. 1983, Vol 27, Num 3, pp 1605-1609, issn 0163-1829Article

SUR LES PROPRIETES D'ELECTROLUMINESCENCE DE L'ARSENIURE DE GALLIUMSPIVAK VS.1971; TRUDY MOSKOV. ENERGET. INST.; S.S.S.R.; DA. 1971; NO 94; PP. 117-119; BIBL. 2 REF.Serial Issue

ETUDE DU RETARD A L'ETABLISSEMENT DE L'ELECTROLUMINESCENCE D'UNE STRUCTURE PN, ET DE SA RELATION AVEC LA CAPACITE DE JONCTIONTSARENKOV BV; IMENKOV AN; POPOV IV et al.1972; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1972; VOL. 6; NO 12; PP. 2364-2369; BIBL. 5 REF.Serial Issue

PROPRIETES PHOTOVOLTAIQUES DE JONCTIONS PN DU TYPE DIFFUSION DANS DES ALLIAGES GERMANIUM-SILICIUMBEKIROV M YA; MAMEDOVA GA.1974; AKAD. NAUK AZERBAJDZH. S.S.R., DOKL.; S.S.S.R.; DA. 1974; VOL. 30; NO 5; PP. 20-25; ABS. AZERB. ANGL.; BIBL. 10 REF.Article

PHOTOSENSITIVE TUNNEL JUNCTIONS AND PHOTOSENSITIVE GRANULAR FILMS WITH TE OR SE BARRIERS.TSUBOI T.1976; PHYS. LETTERS, A; NETHERL.; DA. 1976; VOL. 56; NO 6; PP. 472-474; BIBL. 10 REF.Article

EPITAXIAL SILICON P-N JUNCTIONS ON POLYCRYSTALLINE "RIBBON" SUBSTRATES.KRESSEL H; ROBINSON P; MCFARLANE SH et al.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 25; NO 4; PP. 197-199; BIBL. 3 REF.Article

JONCTIONS P-N DIFFUSEES DANS LE CARBURE DE SILICIUM CUBIQUEALTAJSKIJ YU M; ZUEV VL; KALABUKHOV IP et al.1972; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOELEKTRON.; S.S.S.R.; DA. 1972; VOL. 15; NO 9; PP. 1166-1169; BIBL. 7 REF.Serial Issue

ETUDE DE LA DISPERSION DE LA CAPACITE DE BARRIERE DES DIODES AU SILICIUM P TRES RESISTIF A IMPURETES PROFONDESDMITRENKO NN; KURILO PM; LITOVCHENKO PG et al.1974; POLUPROVODN. TEKH. MIKROELEKTRON. U.S.S.R.; S.S.S.R.; DA. 1974; NO 17; PP. 24-29; BIBL. 6 REF.Article

Properties of superconducting p-n junctionsMANNHART, J; KLEINSASSER, A; STRÖBEL, J et al.Physica. C. Superconductivity. 1993, Vol 216, Num 3-4, pp 401-416, issn 0921-4534Article

A THREE JOSEPHSON-JUNCTION DIRECT COUPLED ISOLATION DEVICETSING CHOW WANG; JOSEPHS RM; STEIN BF et al.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 3; PP. 414-417; BIBL. 13 REF.Article

TEMPERATURE-GRADIENT INSTABILITIES IN SEMICONDUCTOR JUNCTIONS.HANDEL PH.1975; PHYS. REV., B; U.S.A.; DA. 1975; VOL. 11; NO 4; PP. 1595-1599; BIBL. 6 REF.Article

Breakdown voltage of diffused epitaxial junctionsBULUCEA, C.Solid-state electronics. 1991, Vol 34, Num 12, pp 1313-1318, issn 0038-1101Article

Space charge and injection capacitances of p-n junctions from small signal numerical solutionsKWOK, C. Y.Journal of physics. D, Applied physics (Print). 1983, Vol 16, Num 12, pp L263-L267, issn 0022-3727Article

AVALANCHE BREAKDOWN VOLTAGE OF HYPERABRUPT SILICON P-N JUNCTIONS.GUPTA AK; TYAGI MS.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 4; PP. 342-344; BIBL. 8 REF.Article

SIMPLE RELATIONSHIP BETWEEN THE BREAKDOWN VOLTAGE, CONCENTRATION, AND JUNCTION DEPTH FOR DIFFUSED PN JUNCTIONSRANG T.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 72; NO 1; PP. K117-K119; BIBL. 13 REF.Article

AVALANCHE BREAKDOWN VOLTAGE OF GAAS HYPERABRUPT JUNCTIONSSHIMIZU A; KOSHIMIZU T.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 12; PP. 1155-1160; BIBL. 28 REF.Article

INERTIE D'UN "FILAMENT" DE COURANT ET INFLUENCE DE REACTIONS EXTERIEURES SUR SA STABILITE LORS DE LA DISRUPTION SECONDAIRE DE JONCTIONS P-NVALATSKA K; VISHNYAUSKAS YU; MACHYULAJTIS CH et al.1979; LITOV. FIZ. SB.; ISSN 0024-2969; SUN; DA. 1979; NO 4; PP. 533-541; ABS. LIT/ENG; BIBL. 6 REF.Article

On the relationship between the bulk recombination lifetime and the excess 1/f noise in silicon p-n junction diodesSIMOEN, E; VANHELLEMONT, J; CLAEYS, C et al.Solid state communications. 1996, Vol 98, Num 11, pp 961-964, issn 0038-1098, 3 p.Article

A mathematical study of general analytical models for step p-n semiconductor junctionsYING-CHAO RUAN; PARANJAPE, B. V; JING-QING TANG et al.Journal of applied physics. 1985, Vol 58, Num 7, pp 2662-2671, issn 0021-8979Article

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