Phenomenon of zaplyvania in p+-n and n+-p-junctions and its influence on the characteristics of semiconductor devices and the elements of integral schemesGARIAINOV, S. A; GARIAINOV, A. S; PLESHKO, B. K et al.Radiotehnika i èlektronika. 1990, Vol 35, Num 1, pp 166-174, issn 0033-8494Article

Zn-diffused p-n junction in the quaternary (Al_0.48In_0.52As)_z(Ga_0.47In_0.53As)_1-zHALLALI, P. E; BLANCONNIER, P; PRASEUTH, J. P et al.Journal of the Electrochemical Society. 1988, Vol 135, Num 11, pp 2869-2872, issn 0013-4651Article

Depletion approximation analysis of an exponentially graded semiconductor p-n junctionPIMBLEY, J. M.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 11, pp 1957-1962, issn 0018-9383, 1Article

Formation of low reverse current ion-implanted n⁺p junctions by low-temperature annealingISHIHARA, Y; OKITA, A; YOSHIKAWA, K et al.Applied physics letters. 1989, Vol 55, Num 10, pp 966-968, issn 0003-6951, 3 p.Article

Hydrogen immobilization in silicon p-n junctionsJOHNSON, N. M; HERRING, C.Physical review. B, Condensed matter. 1988, Vol 38, Num 2, pp 1581-1584, issn 0163-1829Article

On Miller's approximation in silicon plane junctionsMANDUTEANU, G. V.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 11, pp 2492-2494, issn 0018-9383Article

Current-voltage characteristics of diodes with and without lightBOER, K. W.Physica status solidi. A. Applied research. 1985, Vol 87, Num 2, pp 719-734, issn 0031-8965Article

1.54-μm electroluminescence of erbium-doped silicon grown by molecular beam epitaxyENEN, H; POMRENKE, G; AXMANN, A et al.Applied physics letters. 1985, Vol 46, Num 4, pp 381-383, issn 0003-6951Article

Analysis of the soft reverse characteristics of n⁺p drain diodesTHEUNISSEN, M. J. J; LIST, F. J.Solid-state electronics. 1985, Vol 28, Num 5, pp 417-425, issn 0038-1101Article

The analysis of thin cylindrical symmetry lateral collection diodesWHITE, A. M.Journal of physics. C. Solid state physics. 1985, Vol 18, Num 35, pp 6517-6521, issn 0022-3719Article

Courant de thermoinjection non classique dans des structures p-n de GaPEVSTROPOV, V. V; KALININ, B. N; TSARENKOV, V. V et al.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 4, pp 599-606, issn 0015-3222Article

Enhanced photosensitization process induced by the p-n junction of Bi₂O₂CO₃/BiOCl heterojunctions on the degradation of rhodamine BHAIJING LU; LINGLING XU; BO WEI et al.Applied surface science. 2014, Vol 303, pp 360-366, issn 0169-4332, 7 p.Article

Thermostimulated p-n junctionsKAMILOV, I. K; LADZHIALIEV, M. M.JETP letters. 1990, Vol 52, Num 12, pp 679-681, issn 0021-3640Article

On approaches to the built in electric-field calculations in shallow silicon n⁺-p junctionsSILARD, A. P.IEEE electron device letters. 1985, Vol 6, Num 3, pp 111-113, issn 0741-3106Article

A proposed planar junction structure with near-ideal breakdown characteristicsAHMAD, S; AKHTAR, J.IEEE electron device letters. 1985, Vol 6, Num 9, pp 465-467, issn 0741-3106Article

Protonic p-n junctionLANGER, J. J.Applied physics. A, Solids and surfaces. 1984, Vol 34, Num 3, pp 195-198, issn 0721-7250Article

Intermittent transient chaos at interior crises in the diode resonatorROLLINS, R. W; HUNT, E. R.Physical review. A, General physics. 1984, Vol 29, Num 6, pp 3327-3334, issn 0556-2791Article

An analytic solution for breakdown voltage of cyclindrical junctions including the interface chargeKYOUNG YANG; IL-JUNG KIM; MIN-KOO HAN et al.Solid-state electronics. 1995, Vol 38, Num 5, pp 1107-1108, issn 0038-1101Article

Selective etching of silicon in aqueous KOHLAI-CHENG CHEN; MINJAN CHEN; CHI-CHAO WAN et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1995, Vol 34, Num 2-3, pp 180-187, issn 0921-5107Article

Blue light emission from ZnSe p-n junctionsNISHIZAWA, J; ITOH, K; OKUNO, Y et al.Journal of applied physics. 1985, Vol 57, Num 6, pp 2210-2216, issn 0021-8979Article

A precise scaling length for depleted regionsSCHRIMPF, R. D; WARNER, R. M. JR.Solid-state electronics. 1985, Vol 28, Num 8, pp 779-782, issn 0038-1101Article

Structures à largeur de bande interdite variable pour les mesures spectrométriquesGILL'MAN, B. I; LIBERMAN, S. L.Fizika i tehnika poluprovodnikov. 1985, Vol 19, Num 10, pp 1721-1724, issn 0015-3222Article

Experimental study of the lasing P/N junction as an electro-optical transducerSOMMERS, H. S. JR.Journal of applied physics. 1984, Vol 55, Num 5, pp 1308-1321, issn 0021-8979Article

Generation function in uniformly multiplying avalanche diodeCHAKRABORTI, N. B; SAMBHU RAKSHIT.I.E.E.E. transactions on electron devices. 1984, Vol 31, Num 9, pp 1346-1347, issn 0018-9383Article

Variation de la structure d'une jonction p-n par miniaturisationIL'IN, V. I; MUSIKHIN, S. F.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 3, pp 436-440, issn 0015-3222Article