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Results 1 to 25 of 41143

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A Monte Carlo method for study of Auger recombination effects in semiconductorsLUI, W. W; YOSHIKUNI, Y; YAMANAKA, T et al.Journal of applied physics. 1993, Vol 73, Num 3, pp 1226-1234, issn 0021-8979Article

A macroscopic time dependent electrical conduction model for thin phosphosilicate glass filmsPOPA, O; COBIANU, C.Journal of applied physics. 1993, Vol 73, Num 2, pp 824-828, issn 0021-8979Article

A novel switchable glazing formed by electrically induced chains of suspensions = Un nouveau vitrage intelligent à suspensions de particules arrangées en chaînes par effet électrorhéologiqueTADA, H; SAITO, Y; HIRATA, M et al.Journal of applied physics. 1993, Vol 73, Num 2, pp 489-493, issn 0021-8979Article

A radial finite model of thermal lens spectrometry and the influence of sample radius upon the validity of the radial infinite modelJUN SHEN; SNOOK, R. D.Journal of applied physics. 1993, Vol 73, Num 10, pp 5286-5288, issn 0021-8979, 1Article

A theoretical model for the density distribution of mobile ions in the oxide of metal-oxide-semiconductor structuresMITRA, V; BENTARZI, H; BOUDERBALA, R et al.Journal of applied physics. 1993, Vol 73, Num 9, pp 4287-4291, issn 0021-8979Article

An investigation on the fine defect structure of CoCrTa/Cr magnetic thin filmsWONG, B. Y; YONG SHEN; LAUGHLIN, D. E et al.Journal of applied physics. 1993, Vol 73, Num 1, pp 418-421, issn 0021-8979Article

Analytical two-layer Hall analysis : application to modulation-doped field-effect transistorsLOOK, D. C; STUTZ, C. E; BOZADA, C. A et al.Journal of applied physics. 1993, Vol 74, Num 1, pp 311-314, issn 0021-8979Article

Application of microwave detection of the Shubnikov-de Haas effect in two-dimensional systemsLINKE, H; OMLING, P; RAMVALL, P et al.Journal of applied physics. 1993, Vol 73, Num 11, pp 7533-7542, issn 0021-8979, 1Article

Atomic-layer epitaxy by a flux-interruption and annealing method and the analysis of reflection high-energy electron diffraction oscillation overshoot in the molecular-beam epitaxy growth of GaAsKUN-JING LEE; YA-MIN LEE, J; YU-JENG CHANG et al.Journal of applied physics. 1993, Vol 73, Num 7, pp 3291-3294, issn 0021-8979Article

Behavior of elastic constants, refractive index, and lattice parameter of cubic zirconia at high temperaturesBOTHA, P. J; CHIANG, J. C. H; COMINS, J. D et al.Journal of applied physics. 1993, Vol 73, Num 11, pp 7268-7274, issn 0021-8979, 1Article

Carbon incorporation during growth of GaAs by TEGa-AsH3 base low-pressure metalorganic chemical vapor depositionCHEN, H. D; CHANG, C. Y; LIN, K. C et al.Journal of applied physics. 1993, Vol 73, Num 11, pp 7851-7856, issn 0021-8979, 1Article

Characteristics and origin of the 1.681 eV luminescence center in chemical-vapor-deposited diamond filmsTOM FENG; SCHWARTZ, B. D.Journal of applied physics. 1993, Vol 73, Num 3, pp 1415-1425, issn 0021-8979Article

Characterization of Ca1-xErxF2+x solid solution thin films grown on Si(100) substratesBARRIERE, A. S; MOMBELLI, B; PORTE, B et al.Journal of applied physics. 1993, Vol 73, Num 3, pp 1180-1186, issn 0021-8979Article

Characterization of submicrometer periodic structures produced on polymer surfaces with low-fluence ultraviolet laser radiationBOLLE, M; LAZARE, S.Journal of applied physics. 1993, Vol 73, Num 7, pp 3516-3524, issn 0021-8979Article

Comments on the thermoelectric properties of pressure-sintered Si0.8Ge0.2 thermoelectric alloysROWE, D. M; FU, L. W; WILLIAMS, S. G. K et al.Journal of applied physics. 1993, Vol 73, Num 9, pp 4683-4685, issn 0021-8979Article

Compound-lens injector for a pulsed 13-TW electron beamSANFORD, T. W. L; POUKEY, J. W; HALBLEIB, J. A et al.Journal of applied physics. 1993, Vol 73, Num 12, pp 8607-8614, issn 0021-8979Article

Conductivity in insulators due to implantation of conducting speciesPRAWER, S; HOFFMAN, A; PETRAVIC, M et al.Journal of applied physics. 1993, Vol 73, Num 8, pp 3841-3845, issn 0021-8979Article

Correlation between optical spectroscopy and capacitance-voltage profile simulation applied to interface states in multilayer GaAs/AlGaAs heterostructuresRIMMER, J. S; HAMILTON, B; DAWSON, P et al.Journal of applied physics. 1993, Vol 73, Num 10, pp 5032-5037, issn 0021-8979, 1Article

Data analysis strategies for the characterization of normal : superconductor point contacts by barrier strength parameterSMITH, C. W; REINERTSON, R. C; DOLAN, P. J et al.Journal of applied physics. 1993, Vol 73, Num 9, pp 4439-4443, issn 0021-8979Article

Depth profiling of the Ge concentration in SiGe alloys using in situ ellipsometry during reactive-ion etchingKROESEN, G. M. W; OEHRLEIN, G. S; DE FRESART, E et al.Journal of applied physics. 1993, Vol 73, Num 12, pp 8017-8026, issn 0021-8979Article

Dielectric polarizabilities of ions in oxides and fluoridesSHANNON, R. D.Journal of applied physics. 1993, Vol 73, Num 1, pp 348-366, issn 0021-8979Article

Differences in the structure of amorphous hydrogenated silicon-carbide layers prepared with either methane or silylmethanesFÖLSCH, J; RÜBEL, H; SCHADE, H et al.Journal of applied physics. 1993, Vol 73, Num 12, pp 8485-8488, issn 0021-8979Article

Doping and residual impurities in GaAs layers grown by close-spaced vapor transportLE BEL, C; COSSEMENT, D; DODELET, J. P et al.Journal of applied physics. 1993, Vol 73, Num 3, pp 1288-1296, issn 0021-8979Article

Dynamical model of microscale electromechanical spatial light modulatorWETSEL, G. C; STROZEWSKI, K. J.Journal of applied physics. 1993, Vol 73, Num 11, pp 7120-7124, issn 0021-8979, 1Article

Effects of thermal nitridation on the radiation hardness of the SiO2/Si interfaceDE CASTRO, A. J; FERNANDEZ, M; SACEDON, J. L et al.Journal of applied physics. 1993, Vol 73, Num 11, pp 7465-7470, issn 0021-8979, 1Article

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