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Results 1 to 25 of 36736

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An improved junction capacitance model for junction field-effect transistorsHAO DING; LIOU, Juin J; CIRBA, Claude R et al.Solid-state electronics. 2006, Vol 50, Num 7-8, pp 1395-1399, issn 0038-1101, 5 p.Article

The effects of gate field on the leakage characteristics of heavily doped junctionsNOBLE, W. P; VOLDMAN, S. H; BRYANT, A et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 4, pp 720-726, issn 0018-9383, 7 p.Article

Photoacoustic and OBIC measurements on planar high-voltage p+-n junctionsFLOHR, T; HELBIG, R.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 10, pp 1683-1686, issn 0018-9383Article

Inherent and stress-induced leakage in heavily doped silicon junctionsHACKBARTH, E; DUAN-LEE TANG, D.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 12, pp 2108-2118, issn 0018-9383Article

A new structure in junction devicesKAO, Y. C.Solid-state electronics. 1987, Vol 30, Num 7, pp 739-743, issn 0038-1101Article

Tribo-electrification mechanism for self-mated metals in dry severe wear process. Part II: pure soft metalsCHIOU, Yuang-Cherng; CHANG, Yuh-Ping; LEE, Rong-Tsong et al.Wear. 2003, Vol 254, Num 7-8, pp 616-624, issn 0043-1648, 9 p.Article

Definition of gastroduodenal junction in healthy subjectsLAWSON, H. H.Journal of clinical pathology. 1988, Vol 41, Num 4, pp 393-396, issn 0021-9746Article

Modelling DC characteristics of heterostructure bipolar junction transistorsMUHAMMAD TAHER ABUELMA'ATTI.Microelectronics. 1986, Vol 17, Num 5, pp 5-8, issn 0026-2692Article

Adaptors, junction dynamics, and spermatogenesisLEE, Nikki P. Y; YAN CHENG, C.Biology of reproduction. 2004, Vol 71, Num 2, pp 392-404, issn 0006-3363, 13 p.Article

A simple method of automatic faulty-trunk detectionMARKOV, Z.AEU. Archiv für Elektronik und Übertragungstechnik. 1984, Vol 38, Num 1, pp 75-77, issn 0001-1096Article

Interaction of niobium counter electrodes with aluminium oxide and rare-earth oxide barriersRONAY, M; LATTA, E. E.Physical review. B, Condensed matter. 1983, Vol 27, Num 3, pp 1605-1609, issn 0163-1829Article

A new, closed-form compact model for the cyclostationary noise and LS conversion behaviour of RF junction diodesBONANI, F; DONATI GUERRIERI, S; GHIONE, G et al.IEDm : international electron devices meeting. 2002, pp 137-140, isbn 0-7803-7462-2, 4 p.Conference Paper

The temperature dependence of the amplification factor of bipolar-junction transistorsDILLARD, W. C; JAEGER, R. C.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 1, pp 139-142, issn 0018-9383Article

Inelastic electron tunneling spectra in Pb-GaSxSe1-x-Pb junctionsYAMAGUCHI, K; NISHINA, Y.Journal of the Physical Society of Japan. 1984, Vol 53, Num 12, pp 4257-4265, issn 0031-9015Article

Investigation of the type inversion phenomena : resistivity and carrier mobility in the space charge region and electrical neutral bulk in neutron irradiated silicon p+-n junction detectorsZHENG LI; EREMIN, V; STROKAN, N et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 4, pp 367-375, issn 0018-9499Conference Paper

Critical current uniformity and stability of Nb/Al-oxide-Nb Josephson junctionsGATES, J. V; WASHINGTON, M. A; GURVITCH, M et al.Journal of applied physics. 1984, Vol 55, Num 5, pp 1419-1421, issn 0021-8979Article

Thermal analysis of loop heat pipe used for high-power LEDLU, Xiang-You; HUA, Tse-Chao; LIU, Mei-Jing et al.Thermochimica acta. 2009, Vol 493, Num 1-2, pp 25-29, issn 0040-6031, 5 p.Article

Direct determination of p/n junction depth by the emission of matrix complex ionsALEXANDROV, O. V; KAZANTSEV, D. Yu; KOVARSKY, A. P et al.Applied surface science. 2003, Vol 203-04, pp 520-522, issn 0169-4332, 3 p.Conference Paper

Gelatin gels in deuterium oxideOAKENFULL, David; SCOTT, Alan.Food hydrocolloids. 2003, Vol 17, Num 2, pp 207-210, issn 0268-005X, 4 p.Article

SiC junction-controlled transistorsMIHAILA, A.-P; UDREA, F; RASHID, S. J et al.Microelectronic engineering. 2006, Vol 83, Num 1, pp 176-180, issn 0167-9317, 5 p.Conference Paper

Bilayered cyclofuseneKARIMI, Sasan; LEWINTER, Marty; KALYANSWAMY, Sudesh et al.Journal of mathematical chemistry. 2008, Vol 43, Num 2, pp 892-900, issn 0259-9791, 9 p.Article

IMPORTANCE PHYSIOLOGIQUE DES JONCTIONS COMMUNICANTESMAZET F; EHRHART JC.1980; J. PHYSIOL. (PARIS); ISSN 0021-7948; FRA; DA. 1980; VOL. 76; NO 6; PP. 529-549; ABS. ENG; BIBL. 3 P.Article

Genetic link between p53 and genes required for formation of the zonula adherens junctionYAMAGUCHI, Masamitsu; HIROSE, Fumiko; INOUE, Yoshihiro H et al.Cancer science. 2004, Vol 95, Num 5, pp 436-441, issn 1347-9032, 6 p.Article

Analytical model for the effective recombination velocity at an arbitrarily doped high-low junctionJANKOVIC, N. D; KARAMARKOVIC, J. P.IEE proceedings. Part I. Solid-state and electron devices. 1988, Vol 135, Num 5, pp 136-138, issn 0143-7100Article

Theory of prism-coupled light emission from tunnel junctionsUSHIODA, S; RUTLEDGE, J. E; PIERCE, R. M et al.Physical review. B, Condensed matter. 1986, Vol 34, Num 10, pp 6804-6812, issn 0163-1829Article

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