VAPOR PRESSURE DEPENDENCE OF THE RELATIVE COMPOSITION OF III-V MIXED CRYSTALS IN VAPOR PHASE EPITAXY.KAJIYAMA K.1976; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1976; VOL. 123; NO 3; PP. 423-425; BIBL. 10 REF.Article

KINETICS OF ANTIMONY DOPING IN SILICON MOLECULAR BEAM EPITAXYTABE M; KAJIYAMA K.1983; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1983; VOL. 22; NO 3; PART. 1; PP. 423-428; BIBL. 13 REF.Article

NOVEL LOW-TEMPERATURE RECRYSTALLIZATION OF AMORPHOUS SILICON BY HIGH-ENERGY ION BEAMNAKATA J; KAJIYAMA K.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 8; PP. 686-688; BIBL. 7 REF.Article

COMPORTEMENT A LA RETENTION CHROMATOGRAPHIQUE EN PHASE GAZEUSE DE DERIVES TRIFLUORO-ACETYL-, ACETYL- ET TRIMETHYLSILYL DE DIVERS O-METHYLSORBITOLSKAJIYAMA K; HAYASHI Y.1978; SEN-I GAKKAISHI; JPN; DA. 1978; VOL. 34; NO 8; PP. 366-375; ABS. ENG; BIBL. 15 REF.Article

TEMPERATURE DEPENDENCE OF AVALANCHE BREAKDOWN VOLTAGE IN SI P-N JUNCTIONS.KAJIYAMA K; KANBE H.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 6; PP. 2744-2745; BIBL. 3 REF.Article

GAS MIXING EFFECT ON ION CURRENT SPECTRUM AND ITS APPLICATION TO OPTIMIZE IMPLANTATION SOURCE GAS COMPOSITIONIRITA Y; KAJIYAMA K.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 4; PART. 1; PP. 633-635; BIBL. 3 REF.Article

THE ANOMALOUS REFRACTIVE INDEX IN THE ELLIPSOMETRIC EVALUATION OF AN INHOMOGENEOUS FILMNAKATA J; KAJIYAMA K.1981; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1981; VOL. 80; NO 4; PP. 383-393; BIBL. 9 REF.Article

AVALANCHE INJECTION DELAY IN LO-HI JUNCTIONS AND THE IONIZATION RATE AT LOW ELECTRIE FIELDKAJIYAMA K; MIZUSHIMA Y.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 5; PP. 806-807; BIBL. 6 REF.Article

OPTIMUM BUILT-IN-BARRIER HEIGHT UTILIZING AN EXTENDED CONCEPT OF IMPEDANCE MATCHINGKAJIYAMA K; MIZUSHIMA Y.1978; PROC. I.E.E.E.; USA; DA. 1978; VOL. 66; NO 5; PP. 598-599; BIBL. 4 REF.Article

CONCENTRATION DEPENDENCE OF THE GAIN SPECTRUM IN METHANOL SOLUTIONS OF RHODAMINE 6G.URISU T; KAJIYAMA K.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 8; PP. 3559-3562; BIBL. 11 REF.Article

PRECISE PROFILES FOR ARSENIC IMPLANTED IN SI AND SIO₂ OVER A WIDE IMPLANTATION ENERGY RANGE (10 KEV-2.56 MEV)NAKATA J; KAJIYAMA K.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 9; PART. 1; PP. 1363-1369; BIBL. 17 REF.Article

HIGH ENERGY AS⁺ ION IMPLANTATION INTO SI-ARSENIC PROFILES AND ELECTRICAL ACTIVATION CHARACTERISTICSTAKAHASHI M; NAKATA J; KAJIYAMA K et al.1981; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1981; VOL. 20; NO 11; PP. 2205-2209; BIBL. 10 REF.Article

SCHOTTKY-BARRIER DEVICES WITH LOW BARRIER HEIGHT.KAJIYAMA K; SAKATA S; MIZUSHIMA Y et al.1974; PROC. I.E.E.E.; U.S.A.; DA. 1974; VOL. 62; NO 9; PP. 1287-1288; BIBL. 1 REF.Article

SOLID-PHASE EPITAXY OF CVD AMORPHOUS SI FILM ON CRYSTALLINE SIKUNII Y; TABE M; KAJIYAMA K et al.1982; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 10; PART. 1; PP. 1431-1436; BIBL. 23 REF.Article

PERFORMANCE OF P-I-N PHOTODIODE COMPARED WITH AVALANCHE PHOTODIODE IN THE LONGER-WAVELENGTH REGION OF 1 TO 2 UM.HATA S; KAJIYAMA K; MIZUSHIMA Y et al.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 22; PP. 668-669; BIBL. 7 REF.Article

REDUCTION PARTIELLE DE TISSUS DE LAINE AVEC L'ACIDE THIOGLYCOLIQUE EN SOLUTION AQUEUSE CONCENTREE DE CHLORURE DE SODIUMSAKAMOTO M; SATO Y; KAJIYAMA K et al.1977; SEN-I GAKKAISHI; JAP.; DA. 1977; VOL. 33; NO 7; PP. T.307-T.313; ABS. ANGL.; BIBL. 12 REF.Article

BARRIER HEIGHT OF HF/GAAS DIODE.KAJIYAMA K; SAKATA S; OCHI O et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 7; PP. 3221-3222; BIBL. 7 REF.Article

SOLID-PHASE LATERAL EPITAXY OF CHEMICAL-VAPOR-DEPOSITED AMORPHOUS SILICON BY FURNACE ANNEALINGKUNII Y; TABE M; KAJIYAMA K et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 5; PP. 2847-2849Article

NOVEL AUTOMATIC MEASURING SYSTEM FOR RESISTIVITY PROFILES IN SILICON WAFERSKOMATSU R; KAJIYAMA K; NAKAMURA H et al.1980; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1980; VOL. 19; NO 1; PP. 169-173; BIBL. 4 REF.Article

EFFECTS ON SPONTANEOUS EMISSION ON DYNAMIC CHARACTERISTICS OF SEMICONDUCTOR LASERS.KAJIYAMA K; HATA S; SAKATA S et al.1977; APPL. PHYS.; GERM.; DA. 1977; VOL. 12; NO 2; PP. 209-210; BIBL. 4 REF.Article

IN SITU SELF ION BEAM ANNEALING OF DAMAGE IN SI DURING HIGH ENERGY (0.53 MEV-2.56 MEV) AS⁺ ION IMPLANTATIONNAKATA J; TAKAHASHI M; KAJIYAMA K et al.1981; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1981; VOL. 20; NO 11; PP. 2211-2221; BIBL. 15 REF.Article

LOAD-CARRYING CAPACITY OF THE H_B EQUIV. A 340 (HARDENED AND TEMPERED) GEARS. II: SURFACE DURABILITIES OF THE LEADED FREE-CUTTING STEEL HOBBED GEARS AND HONED GEARS = CAPACITE DE CHARGE DES ENGRENAGES DE DURETE H_B EQUIV. A 340 TREMPES ET REVENUS. II/ DUREE VIE DE LA SURFACE D'ENGRENAGES EN ACIER DE DECOLLETAGE AU PLOMB FRAISES PAR FRAISE MERE ET D'ENGRENAGES RODESNAKANISHI T; UENO T; ARIURA Y et al.1980; BULL. JSME; ISSN 0021-3764; JPN; DA. 1980; VOL. 23; NO 178; PP. 603-610; BIBL. 8 REF.Article

HIGH CARBON STEEL WIRE RODS FOR STEEL TIRE CORD PRODUCED BY BOF PROCESSKAJIYAMA K; KATO T; MATSUMURA T et al.1975; WIRE J.; U.S.A.; DA. 1975; VOL. 8; NO 6; PP. 71-79; BIBL. 1 REF.Article

OPTICAL DIAGNOSTIC TECHNIQUES FOR DIESEL ENGINE COMBUSTIONKAJIYAMA K; KOMIYAMA K; TSUMURA Y et al.1981; NEW ENERGY CONSERVATION TECHNOLOGIES AND THEIR COMMERCIALIZATION. INTERNATIONAL CONFERENCE/1981/BERLIN; DEU/USA; BERLIN; NEW YORK: SPRINGER-VERLAG; DA. 1981; PP. 2351-2361; BIBL. 11 REF.Conference Paper

DESIGN AND CHARACTERISTICS OF LOW NOISE AND HIGH SPEED SILICON AVALANCHE PHOTODIODES.KANBE H; KIMURA T; MIZUSHIMA Y et al.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; SUPPL. 1; PP. 275-278; BIBL. 8 REF.; (CONF. SOLID STATE DEVICES. 8. PROC.; TOKYO; 1976)Conference Paper