ANALYTIC CALCULATION OF PHOTOFRACTIONS FOR NAI(TL) SCINTILLATION CRYSTALS TO MONOENERGETIC GAMMA RAYSKAMINISHI K.1979; JAP. J. APPL. PHYS.; JPN; DA. 1979; VOL. 18; NO 3; PP. 423-428; BIBL. 4 REF.Article

RESULTS OF EXPERIMENTS ON POWER SUPPLY AT THE MIYAZAKI TEST TRACK OF LEVITATED TRANSPORTATIONKAMINISHI K.1979; JAP. RAILWAY ENGNG; JPN; DA. 1979; VOL. 19; NO 1; PP. 10-13; ABS. FRE/SPAArticle

Photon number statistics in resonance fluorescence with excitation of finite bandwidthKAMINISHI, K.Journal of the Physical Society of Japan. 1984, Vol 53, Num 3, pp 1006-1016, issn 0031-9015Article

PRACTICAL METHOD OF IMPROVING THE UNIFORMITY OF MAGNETIC FIELDS GENERATED BY SINGLE AND DOUBLE HELMHOLTZ COILSKAMINISHI K; NAWATA S.1981; REV. SCI. INSTRUM.; ISSN 0034-6748; USA; DA. 1981; VOL. 52; NO 3; PP. 447-453; BIBL. 3 REF.Article

AN OPTIMUM DECONVOLUTION TECHNIQUE FOR A FABRY-PEROT INTERFEROMETER TO DETERMINE TRUE SPECTRAL PROFILES AND PRECISE ATOMIC DENSITY.KAMINISHI K; NAWATA S.1974; JAP. J. APPL. PHYS.; JAP.; DA. 1974; VOL. 13; NO 10; PP. 1640-1652; BIBL. 25 REF.Article

INVESTIGATION OF PHOTON STATISTICS AND CORRELATIONS OF A DYE LASERKAMINISHI K; RAJARSHI ROY; SHORT R et al.1981; PHYS. REV. A; ISSN 0556-2791; USA; DA. 1981; VOL. 24; NO 1; PP. 370-378; BIBL. 18 REF.Article

En Japonais = Various acid pretreatments of water samples containing chromiumEZAKI, T; KAMINISHI, K; TAMAOKU, K et al.Bunseki Kagaku. 1991, Vol 40, Num 8, pp T157-T161, issn 0525-1931Article

Influence of annealing method on microscopic one-to-one correlation between threshold voltage of GaAs MESFET and dislocationEGAWA, T; SANO, Y; NAKAMURA, H et al.Japanese journal of applied physics. 1986, Vol 25, Num 12, pp L973-L975, issn 0021-4922, 2Article

Energy-absorbing capacity of ductile thin metal sheet under quasi-statical penetration by conical punchKAWANO, S; KAMINISHI, K; YAMASHITA, M et al.JSME International journal. Series 1, Solid mechanics, strengh of materials. 1988, Vol 31, Num 1, pp 108-116Article

Improved transconductance of AlGaAs/GaAs heterostructure FET with Si-doped channelINOMATA, H; NISHI, S; TAKAHASHI, S et al.Japanese journal of applied physics. 1986, Vol 25, Num 9, pp L731-L733, issn 0021-4922, 2Article

Fabrication of GaAs MESFET ring oscillator on MICVD grown GaAs/Si(100) substrateNONAKA, T; AKIYAMA, M; KAWARADA, Y et al.Japanese journal of applied physics. 1984, Vol 23, Num 12, pp 919-921, issn 0021-4922Article

Evaluation of fatigue crack initiation and extension life in microelectronics solder joints of surface mount typeKAMINISHI, K; IINO, M; TANEDA, M et al.JSME international journal. Series A, Solid mechanics and material engineering. 1999, Vol 42, Num 2, pp 272-279, issn 1344-7912Article

Crack initiation and extension under penetration of thin metal sheetKAMINISHI, K; TANEDA, M; TANAKA, S et al.JSME international journal. Series 1, solid mechanics, strenght of materials. 1992, Vol 35, Num 4, pp 475-481, issn 0914-8809Article

High-speed low-power ring oscillator using inverted-structure modulation-doped GaAs/n-AlGaAs field-effect transistorsKINOSHITA, H; NISHI, S; AKIYAMA, M et al.Japanese journal of applied physics. 1985, Vol 24, Num 8, pp 1061-1064, issn 0021-4922Article

Submicrometer insulated-gate inverted-structure HEMT for high-speed large-logicss wing DCFLKINOSHITA, H; ISHIDA, T; INOMATA, H et al.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 5, pp 608-615, issn 0018-9383Article

A laser-produced-plasma VUV continuum source for use with conventional monochromatorsKUDO, T; KAMINISHI, K; UEDA, K et al.Physica scripta (Print). 1987, Vol 35, Num 4, pp 483-487, issn 0031-8949Conference Paper

Effects of the substance offset angle on the growth of GaAs on Si substrateUEDA, T; NISHI, S; KAWARADA, Y et al.Japanese journal of applied physics. 1986, Vol 25, Num 9, pp L789-L791, issn 0021-4922, 2Article

A new insulated-gate inverted-structure modulation-doped AlGaAs/GaAs/N-AlGaAs field-effect transistorKINOSHITA, H; SANO, Y; ISHIDA, T et al.Japanese journal of applied physics. 1984, Vol 23, Num 11, pp L836-L838, issn 0021-4922Article

New insulated-gate inverted-structure AlGaAs/GaAs/n-AlGaAs HEMT ring oscillatorKINOSHITA, H; ISHIDA, T; AKIYAMA, M et al.Electronics Letters. 1985, Vol 21, Num 23, pp 1062-1064, issn 0013-5194Article

Improved threshold voltage uniformity in GaAs MESFET using high purity MOCVD-grown buffer layer as a substrate for ion implantationSANO, Y; NAKAMURA, H; AKIYAMA, M et al.Japanese journal of applied physics. 1984, Vol 23, Num 5, pp L290-L292, issn 0021-4922, 2Conference Paper

Numerical simulation of energy-absorbing capacity of metal sheet under penetrationKAMINISHI, K.Computational mechanics. 1997, Vol 20, Num 1-2, pp 60-66, issn 0178-7675Conference Paper

Soft magnetic applications in the RF rangeYAMAGUCHI, M; MIYAZAWA, Y; KAMINISHI, K et al.Journal of magnetism and magnetic materials. 2004, Vol 268, Num 1-2, pp 170-177, issn 0304-8853, 8 p.Article