au.\*:("KANIEWSKA M")
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POPULATION CHANGES OF NE LEVELS INDUCED IN HE-NE MIXTURE BY LASER ACTIONS IN THE INTERMEDIATE IR. I. THE EVALUATION OF NE ATOM PARAMETERS IN H-NE LASERING MEDIUM.KANIEWSKA M.1977; ACTA PHYS. POLON., A; POLOGNE; DA. 1977; VOL. 52; NO 6; PP. 845-853; BIBL. 11 REF.Article
DETERMINATION OF THE AMPLIFICATION COEFFICIENTS OF THE 4218 NM, 5403 NM AND 7699 NM LASER TRANSITIONS IN NEON.LIS L; KANIEWSKA M.1974; ACTA PHYS. POLON., A; POLOGNE; DA. 1974; VOL. 46; NO 1; PP. 53-60; BIBL. 6 REF.Article
Influence of DX centers on photoresponse of GaAs/AlGaAs double heterostructuresKANIEWSKA, M; KANIEWSKI, J.Physica status solidi. A. Applied research. 1990, Vol 118, Num 2, pp 487-490, issn 0031-8965Article
Deep-level analysis in Te-doped GaAs0.62P0.38KANIEWSKA, M; KANIEWSKI, J.Journal of applied physics. 1988, Vol 63, Num 4, pp 1086-1092, issn 0021-8979Article
Classification of Energy Levels in Quantum Dot Structures by Depleted Layer SpectroscopyKANIEWSKA, M; ENGSTRÖM, O; KACZMARCZYK, M et al.Journal of electronic materials. 2010, Vol 39, Num 6, pp 766-772, issn 0361-5235, 7 p.Conference Paper
Deep levels associated with oxidation induced stacking faults in n-type siliconKANIEWSKI, J; KANIEWSKA, M; PEAKER, A. R et al.Applied physics letters. 1992, Vol 60, Num 3, pp 359-361, issn 0003-6951Article
Anomalies in characteristics of broad-contact ridge waveguide SCH-SQW lasers based on AlGaAs/InGaAs grown by MBEKANIEWSKA, M; RATAJCZAK, J.Physica status solidi. A. Applied research. 2003, Vol 195, Num 1, pp 44-49, issn 0031-8965, 6 p.Conference Paper
A co-related deep level in GaPKANIEWSKI, J; KANIEWSKA, M; JEZEWSKI, M et al.Acta physica Polonica. A. 1990, Vol 77, Num 1, pp 79-82, issn 0587-4246Article
Iron-related deep states in chemical vapour deposited SiKANIEWSKI, J; KANIEWSKA, M; JUNG, W et al.Physica status solidi. A. Applied research. 1990, Vol 120, Num 2, pp 531-538, issn 0031-8965, 8 p.Article
Investigations of surface defects of GaAs grown by molecular beam epitaxyKANIEWSKA, M; KLIMA, K.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 91-92, pp 512-515, issn 0921-5107Conference Paper
Interpretation of DLTS emission and capture data of the Co-related deep level in GaPKANIEWSKI, J; KANIEWSKA, M; JEZEWSKI, M et al.Physica status solidi. A. Applied research. 1989, Vol 116, Num 2, pp 745-753, issn 0031-8965Article
DX center analysis in Sn-doped AlGaAs layer of double heterostructuresKANIEWSKI, J; KANIEWSKA, M; ZDANSKY, K et al.Journal of applied physics. 1987, Vol 62, Num 11, pp 4634-4636, issn 0021-8979Article
Nucleotide sequence and genomic organization of rice tungro spherical virusSHEN, P; KANIEWSKA, M; SMITH, C et al.Virology (New York, NY). 1993, Vol 193, Num 2, pp 621-630, issn 0042-6822Article
Characterization of deep levels at GaAs/GaAs and GaAs/InAs interfaces grown by MBE-interrupted growth techniqueKANIEWSKA, M; ENGSTRÖM, O; PACHOLAK-CYBULSKA, M et al.Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 4, pp 987-991, issn 1862-6300, 5 p.Conference Paper
Oval defects in the MBE grown AlGaAs/InGaAs/GaAs and InGaAs/GaAs structuresKLIMA, K; KANIEWSKA, M; REGINSKI, K et al.Crystal research and technology (1979). 1999, Vol 34, Num 5-6, pp 683-687, issn 0232-1300Article
Electrical properties of hydrogen-implanted Si annealed under high hydrostatic pressureKANIEWSKA, M; MISIUK, A.Crystal research and technology (1979). 2003, Vol 38, Num 3-5, pp 336-343, issn 0232-1300, 8 p.Conference Paper
Deep-level defects induced by Ar-ion beam etching in n-type AlxGa1-xAs grown by MBEKANIEWSKA, M; BOZEK, J.Crystal research and technology (1979). 2003, Vol 38, Num 3-5, pp 351-358, issn 0232-1300, 8 p.Conference Paper
Thermal instability of electron traps in InAs/GaAs quantum dot structuresKANIEWSKA, M; ENGSTRÖM, O; KACZMARCZYK, M et al.Journal of materials science. Materials in electronics. 2008, Vol 19, issn 0957-4522, S101-S106, SUP1Conference Paper
DLTS study of deep levels in GRIN-SCH-SQW GaAs/AlGaAs laser diode structures grown by MBEKANIEWSKA, M; KRYNSKA, D; WESOŁOWSKI, M et al.Optical materials (Amsterdam). 2001, Vol 17, Num 1-2, pp 283-286, issn 0925-3467Conference Paper
Exciton dynamics in thin AlGaAs/GaAs quantum wells grown by MBEBUGAJSKI, M; GODLEWSKI, M; BERGMAN, J. P et al.Thin solid films. 1995, Vol 267, Num 1-2, pp 84-88, issn 0040-6090Conference Paper
DLTS study of deep centers created by Ar-ion bombardment in n- and p-type MBE AlGaAsKANIEWSKA, M; SADOWSKI, J; GUZIEWICZ, M et al.EPJ. Applied physics (Print). 2004, Vol 27, Num 1-3, pp 213-217, issn 1286-0042, 5 p.Conference Paper
Charge carrier traffic at self-assembled Ge quantum dots on SiKANIEWSKA, M; ENGSTRÖM, O; KARMOUS, A et al.Solid-state electronics. 2013, Vol 83, pp 99-106, issn 0038-1101, 8 p.Conference Paper
Rice tungro disease is caused by an RNA and a DNA virusJONES, M. C; GOUGH, K; BEACHY, R. N et al.Journal of general virology. 1991, Vol 72, Num 4, pp 757-761, issn 0022-1317Article
Unusual properties of C-T characteristics of hydrogen implanted and annealed SiKANIEWSKA, M; JUNG, V; ANTONOVA, I. V et al.EPJ. Applied physics (Print). 2004, Vol 27, Num 1-3, pp 141-144, issn 1286-0042, 4 p.Conference Paper
Defect-related diffusion of hydrogen in siliconANTONOVA, I. V; MISIUK, A; LONDOS, C. A et al.Physica. B, Condensed matter. 2003, Vol 340-42, pp 659-663, issn 0921-4526, 5 p.Conference Paper
