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HARMONIC OSCILLATION USING LAMBDA -SHAPED NEGATIVE RESISTANCE DEVICE.TAKAGI H; KANO G.1977; PROC. I.E.E.E.; U.S.A.; DA. 1977; VOL. 65; NO 4; PP. 584-586; BIBL. 4 REF.Article

DUAL DEPLETIN CMOS (D2CMOS) STATIC MEMORY CELL.TAKAGI H; KANO G.1977; I.E.E.E.J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1977; VOL. 12; NO 4; PP. 424-426; BIBL. 8 REF.Article

COMPLEMENTARY JFET NEGATIVE-RESISTANCE DEVICES.TAKAGI H; KANO G.1975; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1975; VOL. 10; NO 6; PP. 509-515; BIBL. 5 REF.Article

A NEW LAMBDA -TYPE NEGATIVE RESISTANCE DEVICE OF INTEGRATED COMPLEMENTARY FET STRUCTURE.KANO G; IWASA H.1974; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1974; VOL. 21; NO 7; PP. 448-449; BIBL. 4 REF.Article

FLUORATION DU CHARBON ACTIVE PAR NH3HORITA K; KANO G; HASHIMOTO Y et al.1977; NIPPON KAGAKU KAISHI; JAP.; DA. 1977; NO 8; PP. 1091-1096; ABS. ANGL.; BIBL. 22 REF.Article

A NEW-TWO-TERMINAL C-MNOS MEMORY CELL.KOIKE S; KANO G; KASHIWAKURA A et al.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; SUPPL. 1; PP. 201-204; BIBL. 4 REF.; (CONF. SOLID STATE DEVICES. 8. PROC.; TOKYO; 1976)Conference Paper

NEW TWO-TERMINAL C-MNOS MEMORY CELLS.KOIKE S; KANO G; KASHIWAKURA A et al.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 9; PP. 1036-1041; BIBL. 9 REF.Article

VAPOR PHASE EQUILIBRIA OF ARSENIC-TRIOXIDE OVER GALLIUM ARSENIDETERAMOTO I; TAKAGI H; KANO G et al.1979; JAP. J. APPL. PHYS.; JPN; DA. 1979; VOL. 18; NO 4; PP. 723-728; BIBL. 15 REF.Article

LIGHT-CONTROLLED ANODIC OXIDATION OF N-GAAS AND ITS APPLICATION TO PREPARATION OF SPECIFIED ACTIVE LAYERS FOR MESFET'SSHIMANO A; TAKAGI H; KANO G et al.1979; I.E.E.E. TRANS ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 11; PP. 1690-1695; BIBL. 16 REF.Article

THERMAL OXIDATION OF GAAS IN ARSENIC TRIOXIDE VAPOR.TAKAGI H; KANO G; TERAMOTO I et al.1978; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1978; VOL. 125; NO 4; PP. 579-581; BIBL. 8 REF.Article

A LOW-NOISE DUAL-GATE GAAS MESFET FOR UHF TV TUNERNAMBU S; HAGIO M; NAGASHIMA A et al.1982; IEEE JOURNAL OF SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1982; VOL. 17; NO 4; PP. 648-653; BIBL. 8 REF.Article

A NEW HETEROJUNCTION-GATE GAAS FET.UMEBACHI S; ASAHI K; NAGASHIMA A et al.1976; JAP. J. APPL. PHYS.; JAP.; DA. 1976; VOL. 15; SUPPL. 1; PP. 157-161; BIBL. 4 REF.; (CONF. SOLID STATE DEVICES. 7. PROC.; TOKYO; 1975)Conference Paper

THEORY OF NEGATIVE RESISTANCE OF JUNCTION FIELD-EFFECT TRANSISTORS.MIZUNO H; KANO G; TAKAGI H et al.1976; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1976; VOL. 11; NO 2; PP. 313-317; BIBL. 8 REF.Article

THE LAMBDA DIODE: A VERSATILE NEGATIVE-RESISTANCE DEVICE.KANO G; IWASA H; TAGAGI H et al.1975; ELECTRONICS; U.S.A.; DA. 1975; VOL. 48; NO 13; PP. 105-109Article

STRUCTURE POREUSE DU PRODUIT DE CARBONISATION DU PVC ACTIVE PAR LE GAZ NH3KANO G; HORITA K; OSHITANI M et al.1974; NIPPON KAGAKU KAISHI; JAP.; DA. 1974; NO 11; PP. 2052-2058; ABS. ANGL.; BIBL. 15 REF.Article

Formation of stabilized zirconia with rare earth fluoridesTAKASHIMA, M; KANO, G.Journal of fluorine chemistry. 1988, Vol 40, Num 2-3, pp 375-385, issn 0022-1139Article

Preparation and electrical conductivity of binary rare earth metal fluoride oxidesTAKASHIMA, M; KANO, G.Solid state ionics. 1987, Vol 23, Num 1-2, pp 99-106, issn 0167-2738Article

An ultra-low on resistance power MOSFET fabricated by using a fully self-aligned processUEDA, D; TAKAGI, H; KANO, G et al.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 4, pp 926-930, issn 0018-9383Article

GaAs lateral bipolar transistor with field-separated carriersUEDA, D; TAKAGI, H; KANO, G et al.Electronics Letters. 1987, Vol 23, Num 17, pp 899-900, issn 0013-5194Article

Reduction of feedback-induced noise by high-reflectivity facet coating in single longitudinal mode semiconductor lasersKUME, M; SHIMIZU, H; KANO, G et al.Applied physics letters. 1984, Vol 45, Num 12, pp 1260-1262, issn 0003-6951Article

Heat treatment effects on an In-GaAs ohmic contactOTSUKI, T; AOKI, H; TAKAGI, H et al.Journal of applied physics. 1988, Vol 63, Num 6, pp 2011-2014, issn 0021-8979Article

Fluorination of the superconducting oxide YBCO with elementary fluorineTAKASHIMA, M; AMAYA, M; KANO, G et al.Journal of fluorine chemistry. 1990, Vol 46, Num 1, pp 7-19, issn 0022-1139Article

Design and fabrication of a GaAs monolithic operational amplifierSHIN-ICHI KATSU; KAZUMURA, M; KANO, G et al.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 7, pp 831-838, issn 0018-9383Article

A new self-align technology for GaAs analog MMIĆ'sHAGIO, M; KATSU, S; KAZUMURA, M et al.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 6, pp 754-758, issn 0018-9383Article

Evaluation des caractéristiques des électrodes en charbon actif dans une cellule gazeuseKANO, G; HORITA, K; NISHINO, H et al.Zairyo. 1988, Vol 37, Num 415, pp 472-477, issn 0514-5163Article

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