Double injection in solids with non-ohmic contacts. I: Solids without defectsKAO, K. C.Journal of physics. D, Applied physics (Print). 1984, Vol 17, Num 7, pp 1433-1448, issn 0022-3727Article

Double injection in solids with non-ohmic contacts. II: Solids with defectsKAO, K. C.Journal of physics. D, Applied physics (Print). 1984, Vol 17, Num 7, pp 1449-1467, issn 0022-3727Article

New theory of electrical discharge and breakdown in low-mobility condensed insulatorsKAO, K. C.Journal of applied physics. 1984, Vol 55, Num 3, pp 752-755, issn 0021-8979Article

Study of the structure of plasma polymerized ethylene films with and without silicon incorporation by infra-red spectroscopyLIU, D; KAO, K. C.Polymer communications (Guildford). 1991, Vol 32, Num 11, pp 329-331, issn 0263-6476, 3 p.Article

Anomalous photocurrent transient in polyethyleneTAHIRA, K; KAO, K. C.Journal of physics. D, Applied physics (Print). 1985, Vol 18, Num 11, pp 2247-2259, issn 0022-3727Article

High-field hole injection, conduction, and breakdown in polyethylene films fabricated by plasma polymerizationLIU, D; KAO, K. C.Journal of applied physics. 1991, Vol 69, Num 4, pp 2489-2496, issn 0021-8979, 8 p.Article

Photoelectronic properties of iodine-incorporated poly(N-vinylcarbazole) filmsHU, J; KAO, K. C.Journal of applied polymer science. 1991, Vol 43, Num 9, pp 1633-1643, issn 0021-8995Article

New approach to low temperature deposition of high-quality thin films by electron cyclotron resonance microwave plasmasCHAU, T. T; MEJIA, S. R; KAO, K. C et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 5, pp 2170-2178, issn 0734-211XArticle

Dielectric and optical properties of nitrogen-incorporated polyethylene films fabricated by plasma polymerizationKIM, S. H; XIE, H. K; KAO, K. C et al.Journal of applied polymer science. 1986, Vol 32, Num 6, pp 5543-5556, issn 0021-8995Article

Undoped amorphous SiN_x: H alloy semiconductors: dependence of electronic properties on compositionHERAK, T. V; MCLEOD, R. D; KAO, K. C et al.Journal of non-crystalline solids. 1984, Vol 69, Num 1, pp 39-48, issn 0022-3093Article

Dispersion of optical constants of amorphous Si_1-xGe_x(H) films beyond their absorption edgesKAO, K. C; MCLEOD, R. D; LEUNG, C. H et al.Journal of physics. D, Applied physics (Print). 1983, Vol 16, Num 9, pp 1801-1811, issn 0022-3727Article

The effects of deposition temperature on properties of SiO₂ films fabricated by a new electron cyclotron resonance microwave plasma-enhanced chemical-vapor deposition processCHAU, T. T; MEJIA, S. R; KAO, K. C et al.Canadian journal of physics (Print). 1991, Vol 69, Num 3-4, pp 165-169, issn 0008-4204, 5 p.Conference Paper

Silicon dioxide films fabricated by electron cyclotron resonant microwave plasmasCHAU, T. T; HERAK, T. V; THOMSON, D. J et al.IEEE transactions on electrical insulation. 1990, Vol 25, Num 3, pp 593-598, issn 0018-9367Article

Effects of electric and magnetic fields on the resonance frequency of piezoelectric ceramicsLIN, S. W; CHIN, C. P; FAN, T. K et al.Ferroelectrics (Print). 1988, Vol 88, pp 67-71, issn 0015-0193Article

Amorphous silicon-tellurium alloysSHUFFLEBOTHAM, P. K; CARD, H. C; KAO, K. C et al.Journal of applied physics. 1986, Vol 60, Num 6, pp 2036-2040, issn 0021-8979Article

Hydrogenated amorphous silicon for archival storageMCLEOD, R. D; PRIES, W; CARD, H. C et al.Applied physics letters. 1984, Vol 45, Num 6, pp 628-630, issn 0003-6951Article

Formation and inhibition of free radicals in electrically stressed and aged insulating polymersLI, Z; YIN, Y; WANG, X et al.Journal of applied polymer science. 2003, Vol 89, Num 12, pp 3416-3425, issn 0021-8995, 10 p.Article

Dielectric behavior of As⁺ implanted polyethylene terephthalate filmsTU, D. M; WU, H. C; XI, B. F et al.IEEE transactions on electrical insulation. 1992, Vol 27, Num 2, pp 383-390, issn 0018-9367Article

Electrical conductivity of plasma-treated poly(p-phenylene sulfide) doped with iodineTU, D. M; ZHUANG, G. P; KAO, K. C et al.Journal of applied polymer science. 1991, Vol 43, Num 9, pp 1625-1632, issn 0021-8995Article

Thickness dependence of the dielectric behavior of SiO₂ films fabricated by microwave electron cyclotron resonance plasmasCHAU, T. T; MEJIA, S. R; KAO, K. C et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1991, Vol 9, Num 1, pp 50-57, issn 0734-211XArticle

High field electrical conduction and breakdown in silicon incorporated polyethylene filmsLIU, D; KAN, L; KAO, K. C et al.Journal of applied physics. 1991, Vol 70, Num 2, pp 919-924, issn 0021-8979Article

Electric breakdown under quasi-uniform field conditions and effect of emission shields in polyethyleneTU, D. M; LIU, W. B; ZHUANG, G. P et al.IEEE transactions on electrical insulation. 1989, Vol 24, Num 4, pp 581-590, issn 0018-9367, 10 p.Article

On the relationship between photoconductivity and light intensity in solidsSCHELLENBERG, J. J; KAO, K. C.Journal of physics. D, Applied physics (Print). 1988, Vol 21, Num 12, pp 1764-1768, issn 0022-3727Article

Silicon from microwave plasmas: optical properties and their relation to structureHERAK, T. V; SCHELLENBERG, J. J; SHUFFLEBOTHAM, P. K et al.Journal of non-crystalline solids. 1988, Vol 103, Num 1, pp 125-130, issn 0022-3093Article

Activated reactive evaporation of hydrogenated amorphous silicon nitrideSHUFFLEBOTHAM, P. K; WHITE, J. F; CARD, H. C et al.Applied physics letters. 1986, Vol 49, Num 11, pp 651-653, issn 0003-6951Article