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au.\*:("KARDO-SYSOEV, A. F")

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Processus non stationnaires d'accumulation et de dissipation du plasma d'électrons-trous dans les semiconducteurs dans des champs électriques intensesEFANOV, Y. M; KARDO-SYSOEV, A. F; SMIRNOVA, I. A et al.Fizika i tehnika poluprovodnikov. 1987, Vol 21, Num 4, pp 620-625, issn 0015-3222Article

Courants non stationnaires d'injection double dans les conditions de saturation des vitesses de dérive des électrons et des trousEFANOV, V. M; KARDO-SYSOEV, A. F; POPOVA, M. V et al.Fizika i tehnika poluprovodnikov. 1988, Vol 22, Num 10, pp 1747-1753, issn 0015-3222Article

Impact ionization in silicon subjected to weak fieldsGREKHOV, I. V; ZAZULIN, S. V; KARDO-SYSOEV, A. F et al.Soviet physics. Semiconductors. 1991, Vol 25, Num 5, pp 535-539, issn 0038-5700Article

6-kV, 130-ps rise-time pulsed-power circuit featuring cascaded compression by fast recovery and avalanche diodesKESAR, A. S; MERENSKY, L. M; OGRANOVICH, M et al.Electronics letters. 2013, Vol 49, Num 24, pp 1539-1540, issn 0013-5194, 2 p.Article

Stade initial du développement des ondes d'ionisation par chocs dans les jonctions p-n en surtensionGREKHOV, I. V; KARDO-SYSOEV, A. F; POPOVA, M. V et al.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 8, pp 1380-1385, issn 0015-3222Article

Transient processes in thyristors under conditions with constant voltageBRYLEVSKII, V. I; KARDO-SYSOEV, A. F; CHASHNIKOV, I. G et al.Soviet electrical engineering. 1990, Vol 61, Num 9, pp 123-125, issn 0038-5379Article

New generation of drift step recovery diodes (DSRD) for subnanosecond switching and high repetition rate operationKOZLOV, V. A; SMIRNOVA, I. A; MORVAKOVA, S. A et al.Conference record of the International Power Modulator Symposium. 2002, pp 441-444, issn 1076-8467, isbn 0-7803-7540-8, 4 p.Conference Paper

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