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Proceedings/3rd Bulgarian summer school on vacuum, electron and ion technologies, Varna, 28 september-2 october 1984KARPUZOV, D. S.Vacuum. 1984, Vol 34, Num 2, pp 1025-1099, issn 0042-207XConference Proceedings

2nd bulgarian summer school on vacuum, electron and ion technologies, Varna, 24 to 29 September 1981 = 2ème école d'été bulgare sur les technologies du vide, d'électrons et d'ions, Varna, 24 à 29 Septembre 1981KARPUZOV, D. S.Vacuum. 1982, Vol 32, Num 9, pp 527-599, issn 0042-207XConference Proceedings

Papers/4th Bulgarian summer school on vacuum, electron and ion technologies, October 7-11, 1985, Sozopol BGR = Communications/4ème Ecole d'été bulgare sur les technologies du vide, d'électrons et d'ions, 7-11 Octobre 1985, Sozopol BGRKARPUZOV, D. S.Vacuum. 1986, Vol 36, Num 10, pp 583-700, issn 0042-207XConference Proceedings

Computer simulation of ion-beam mixing of cobalt on silicon = Simulation par ordinateur du mélange par faisceau ionique du cobalt sur le siliciumCHAKAROV, I; KARPUZOV, D. S.NATO ASI series. Series E, Applied sciences. 1989, Vol 155, pp 185-190, issn 0168-132XConference Paper

Inelastic energy-loss estimate for the Biersack-Ziegler interatomic potentialKARPUZOV, D. S; YORDANOVA, K. I.Physics letters. A. 1984, Vol 106, Num 5-6, pp 246-248, issn 0375-9601Article

Computer simulation of ion-bombardment induced sputtering of Rh(111) surface = Simulation sur ordinateur de la pulvérisation d'une surface de Rh(111) induite par bombardement ioniqueCHAKAROV, I. R; KARPUZOV, D. S; TODOROV, S. S et al.Vacuum. 1989, Vol 39, Num 11-12, pp 1123-1126, issn 0042-207XConference Paper

Comparison of calculated depth distributions of implanted ions for genuine and Ge-substituted InP targetsKARPUZOV, D. S; JIMENEZ-RODRIGUEZ, J. J; ARMOUR, D. G et al.Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties. 1986, Vol 53, Num 3, pp L49-L54, issn 0141-8610Article

Helium trapping in nickel and the use of the helium probe as a technique for defect and gas agglomeration studies = Piégeage de l'hélium dans le nickel et utilisation de la sonde à hélium comme technique pour les études d'agglomération de défauts et de gazBAILEY, P; ARMOUR, D. G; KARPUZOV, D. S et al.Radiation effects. 1983, Vol 78, Num 1-4, pp 133-146, issn 0033-7579Article

Radiation defects in Te-implanted germanium. Electron microscopy and computer simulation studiesKALITZOVA, M. G; KARPUZOV, D. S; PASHOV, N. K et al.Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties. 1985, Vol 51, Num 3, pp 373-382, issn 0141-8610Article

Atomic layer epitaxy : 12 years laterHERMAN, M. A.Vacuum. 1990, Vol 42, Num 1-2, pp 61-66, issn 0042-207X, 6 p.Conference Paper

Shadow electron beam 1 : 1 scale printing with 0.1 μm size elementsMAKHMUTOV, R. K; SIDORUK, S. N; VALIEV, K. A et al.Vacuum. 1990, Vol 42, Num 1-2, pp 133-137, issn 0042-207XConference Paper

Buried Si3N4 layers in silicon produced by high-intensity implantation and rapid thermal annealingGRIBKOVSKII, R. V; KOMAROV, F. F; NOVIKOV, A. P et al.Vacuum. 1990, Vol 42, Num 1-2, pp 111-112, issn 0042-207X, 2 p.Conference Paper

Dependence of collisional mixing on recoil energyHAUTALA, M; KOPONEN, I.Vacuum. 1990, Vol 42, Num 1-2, pp 3-7, issn 0042-207X, 5 p.Conference Paper

Fast atom and beam etching assisted by a fluorine-containing radical flowGORBATOV, Y. B; ZINENKO, V. I; VYATKIN, A. F et al.Vacuum. 1990, Vol 42, Num 1-2, pp 121-124, issn 0042-207X, 4 p.Conference Paper

The determination of species distributions and deduction of mixing and effective diffusion parameters in the altered layer of irradiated filmsNOBES, M. J; CARTER, G; KATARDJIEV, I. V et al.Vacuum. 1990, Vol 42, Num 1-2, pp 21-27, issn 0042-207X, 7 p.Conference Paper

Problems of scanning Auger electron microscopyFRANK, L.Vacuum. 1990, Vol 42, Num 1-2, pp 147-150, issn 0042-207XConference Paper

Proceedings/5th Bulgarian summer school of vacuum, electron and ion technologies, 6-10 October 1987, Varna, BGRKARPUZOV, D. S; TODOROV, S. S.Vacuum. 1988, Vol 38, Num 11, pp 965-1055, issn 0042-207XConference Proceedings

Scattering integrals for the interatomic potential proposed by Biersack and Ziegler = Intégrales de diffusion pour le potentiel interatomique proposé par Biersack et ZieglerWALKER, R. P; KARPUZOV, D. S; MARTIN, D. J et al.Radiation effects. 1983, Vol 76, Num 4, pp 125-130, issn 0033-7579Article

A comprehensive SIMS study of high-Tc superconductorsCHENAKIN, S. P.Vacuum. 1990, Vol 42, Num 1-2, pp 139-142, issn 0042-207X, 4 p.Conference Paper

A low working pressure magnetron sputtering sourceKOSTADINOV, L; DOBREV, D.Vacuum. 1990, Vol 42, Num 1-2, pp 35-37, issn 0042-207XConference Paper

Focused ion beam technologyGAMO, K.Vacuum. 1990, Vol 42, Num 1-2, pp 89-93, issn 0042-207XConference Paper

Power dissipation in rf glow dischargesDELTCHEV, R; ALBERT, M; SUCHANECK, G et al.Vacuum. 1990, Vol 42, Num 1-2, pp 33-34, issn 0042-207XConference Paper

Sources of high power ion beams for technological applicationsISAKOV, I. F; KOLODII, V. N; OPEKUNOV, M. S et al.Vacuum. 1990, Vol 42, Num 1-2, pp 159-162, issn 0042-207XConference Paper

Optimization of parameters for dynamic recoil mixing of gold films deposited on silicon = Optimisation des paramètres pour un mixage dynamique par recul de couches d'or sur du siliciumARGYROKASTRITIS, P; KARPUZOV, D. S; COLLIGON, J. S et al.Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties. 1984, Vol 49, Num 4, pp 547-556, issn 0141-8610Article

SIMS profiling of Al-Si interfaces in the presence of oxygen in the ion source or the analysis chamberTODOROV, S. S; CHAKAROV, I. R; MITEVA, V et al.Surface science. 1992, Vol 271, Num 3, pp 641-648, issn 0039-6028Article

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