ZERO-PHONON RECOMBINATION SPECTRA OF DONOR-ACCEPTOR PAIRS IN GAP AND ZNSE: MODEL-IMPURITY-POTENTIAL APPROACHMUNNIX S; KARTHEUSER E.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 26; NO 12; PP. 6776-6787; BIBL. 55 REF.Article

OPTICAL ABSORPTION IN POLAR CRYSTALS WITH SEVERAL LO PHONON BRANCHESLEPINE Y; KARTHEUSER E.1982; CAN. J. PHYS.; ISSN 0008-4204; CAN; DA. 1982; VOL. 60; NO 8; PP. 1180-1186; ABS. FRE; BIBL. 22 REF.Article

CENTRAL CELL EFFECTS IN DONOR-ACCEPTOR PAIR SPECTRA OF POLAR SEMICONDUCTORSMUNNIX S; KARTHEUSER E.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 39; NO 1; PP. 177-179; BIBL. 14 REF.Article

POLARON MOBILITY AT LOW TEMPERATURE: A SELF-CONSISTENT EQUATION-OF-MOTION APPROACHKARTHEUSER E; DEVREESE J; EVRARD R et al.1979; PHYS. REV., B; USA; DA. 1979; VOL. 19; NO 2; PP. 546-551; BIBL. 21 REF.Article

THEORY OF INTRABAND MAGNETOABSORPTION IN WEAKLY POLAR SEMICONDUCTORSVIGNERON JP; EVRARD R; KARTHEUSER E et al.1978; PHYS. REV., B; USA; DA. 1978; VOL. 18; NO 12; PP. 6930-6943; BIBL. 36 REF.Article

SHALLOW CENTER IN AGBR: THEORETICAL INVESTIGATION BY SUM RULES.BRAUWERS M; EVRARD R; KARTHEUSER E et al.1976; SOLID STATE COMMUNIC.; G.B.; DA. 1976; VOL. 19; NO 9; PP. 857-858; BIBL. 8 REF.Article

SUM RULES FOR F CENTERS IN ALKALI HALIDES.BRAUWERS M; EVRARD R; KARTHEUSER E et al.1975; PHYS. REV., B; U.S.A.; DA. 1975; VOL. 12; NO 12; PP. 5865-5871; BIBL. 26 REF.Article

ELECTRON-HOLE CORRELATION EFFECTS ON DONOR-ACCEPTOR PAIRSKARTHEUSER E; BABCENCO A; EVRARD R et al.1982; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1982; VOL. 109; NO 1; PP. 375-386; ABS. GER; BIBL. 21 REF.Article

NOTE ON THE SOLUTION OF THE BOLTZMANN EQUATION FOR ELECTRON-LO PHONON SCATTERINGDEVREESE JT; EVRARD R; KARTHEUSER E et al.1978; PHYS. STATUS SOLIDI, B; DDR; DA. 1978; VOL. 90; NO 1; PP. K73-K76; BIBL. 8 REF.Article

RADIATIVE RECOMBINATION OF DONOR-ACCEPTOR PAIRS IN POLAR SEMICONDUCTORSKARTHEUSER E; EVRARD R; WILLIAMS F et al.1980; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1980; VOL. 21; NO 2; PP. 648-658; BIBL. 33 REF.Article

POLARON FORMALISM APPLIED TO DONOR-ACCEPTOR PAIRS IN SEMICONDUCTORS.EVRARD R; KARTHEUSER E; WILLIAMS F et al.1976; J. LUMINEX.; NETHERL.; DA. 1976; VOL. 14; NO 2; PP. 81-90; BIBL. 15 REF.Article

SELF-CONSISTENT EQUATION-OF-MOTION APPROACH FOR POLARONS.DEVREESE JT; EVRARD R; KARTHEUSER E et al.1975; PHYS. REV., B; U.S.A.; DA. 1975; VOL. 12; NO 8; PP. 3353-3367; BIBL. 32 REF.Article

Effect of chemical shift on polarizabilities of donors in semiconductorsCAHAY, M; KARTHEUSER, E.Solid state communications. 1983, Vol 48, Num 9, pp 781-783, issn 0038-1098Article

ENERGY LEVELS OF BOUND POLARONSDEVREESE J; EVRARD R; KARTHEUSER E et al.1982; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1982; VOL. 44; NO 10; PP. 1435-1438; BIBL. 5 REF.Article

Deformation potentials and the electron-phonon interaction in metals = Potentiels de déformation et interaction électron-phonon dans les métauxKARTHEUSER, E; RODRIGUEZ, S.Physical review. B, Condensed matter. 1986, Vol 33, Num 2, pp 772-779, issn 0163-1829Article

DIRECT GENERATION OF ULTRASOUND BY ELECTROMAGNETIC RADIATION IN METALS IN A MAGNETIC FIELD = GENERATION DIRECTE D'ULTRASONS PAR RAYONNEMENT ELECTROMAGNETIQUE DANS LES METAUX EN CHAMP MAGNETIQUEFEYDER G; KARTHEUSER E; RAM MOHAN LR et al.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 25; NO 12; PP. 7141-7156; BIBL. 29 REF.Article

Optical absorption and Zeeman effect of Cu²⁺ in tetrahedrally coordinated crystalsVILLERET, M; RODRIGUEZ, S; KARTHEUSER, E et al.Physical review. B, Condensed matter. 1991, Vol 43, Num 17, pp 14115-14123, issn 0163-1829Article

Electromagnetic generation of acoustic waves in metals = Génération électromagnétique des ondes acoustiques dans les métauxVILLERET, M; RODRIGUEZ, S; KARTHEUSER, E et al.Physical review. B, Condensed matter. 1988, Vol 37, Num 5, pp 2692-2694, issn 0163-1829Article

Theory of extrinsic oscillatory photoconductivity in polar semiconductorsKARTHEUSER, E; SCHMIT, J; EVRARD, R et al.Journal of applied physics. 1988, Vol 63, Num 3, pp 784-788, issn 0021-8979Article

Influence of the electron-phonon interaction on a donor like exciton in a semiconductor microsphereMARINI, J. C; STEBE, B; KARTHEUSER, E et al.Solid state communications. 1993, Vol 87, Num 5, pp 435-437, issn 0038-1098Article

Effect of anisotropy on the energy and polarizability of donors in elemental semiconductorsKARTHEUSER, E; SCHMIT, J; SZAWACKA, T et al.Solid state communications. 1985, Vol 53, Num 6, pp 551-553, issn 0038-1098Article

The ground state energy of a bound polaron in the presence of a magnetic fieldZORKANI, I; BELHISSI, R; KARTHEUSER, E et al.Physica status solidi. B. Basic research. 1996, Vol 197, Num 2, pp 411-419, issn 0370-1972Article

Theory of electromagnetic generation of acoustic waves in metals = Théorie de la génération électromagnétique d'ondes acoustiques dans les métauxKARTHEUSER, E; RAM MOHAN, L. R; RODRIGUEZ, S et al.Advances in Physics. 1986, Vol 35, Num 5, pp 423-505, issn 0001-8732Article

Isotope splitting of the zero-phonon line of Fe²⁺ in cubic III-V semiconductorsCOLIGNON, D; MAILLEUX, E; KARTHEUSER, E et al.Solid state communications. 1998, Vol 105, Num 4, pp 205-209, issn 0038-1098Article

Section efficace de photoionisation dans les semiconducteurs Polaires = Photoionization cross section of polar semiconductorsZORKANI, I; EL HASNAOUI, Y; LEPINE, Y et al.Journal de physique. I. 1995, Vol 5, Num 10, pp 1311-1316, issn 1155-4304Article