MEASUREMENT OF INTERFACE RECOMBINATION VELOCITY IN (PB,SN) TE/PBTE DOUBLE-HETEROSTRUCTURE LASER DIODESKASEMSET D; FONSTAD CG.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 7; PP. 432-434; BIBL. 13 REF.Article

MINORITY CARRIER LIFETIMES AND LASING THRESHOLD OF PBSNTE HETEROSTRUCTURE LASERSKASEMSET D; FONSTAD CG.1979; I.E.E.E. J. QUANTUM ELECTRON.; USA; DA. 1979; VOL. 15; NO 11; PP. 1266-1270; BIBL. 18 REF.Article

GAIN SATURATION IN SEMICONDUCTOR LASERS: THEORY AND EXPERIMENTKASEMSET D; FONSTAD CG JR.1982; IEEE JOURNAL OF QUANTUM ELECTRONICS; ISSN 0018-9197; USA; DA. 1982; VOL. 18; NO 7; PP. 1078-1083; BIBL. 18 REF.Article

LIQUID PHASE EPITAXY OF PBTESE LATTICE-MATCHED TO PBSNTEKASEMSET D; ROTTER S; FONSTAD CG et al.1981; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1981; VOL. 10; NO 5; PP. 863-878; BIBL. 20 REF.Article

PB_1-XSN_XTE/PBTE_1-YSE_Y LATTICE-MATCHED BURIED HETEROSTRUCTURE LASERS WITH CW SINGLE MODE OUTPURKASEMSET D; ROTTER S; FONSTAD CG et al.1980; I.E.E.E. ELECTRON DEVICE LETT.; USA; DA. 1980; VOL. 1; NO 5; PP. 75-78; BIBL. 13 REF.Article

LONG DELAY TIME FOR LASING IN VERY NARROW GRADED BARRIER SINGLE-QUANTUM-WELL LASERSPRINCE FC; PATEL NB; KASEMSET D et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 12; PP. 435-437; BIBL. 10 REF.Article

LOW-THRESHOLD OXIDE STRIPE GAAS/GAALAS LASERS GROWN BY MOCVDHONG CS; KASEMSET D; PATEL NB et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 12; PP. 497-499; BIBL. 11 REF.Article

Deep level study of VPE layers for GaAs FET devicesJENN-HWA HUANG; DUBEY, M; KASEMSET, D et al.Journal of the Electrochemical Society. 1988, Vol 135, Num 11, pp 2828-2831, issn 0013-4651Article

Growth and characterization of Ga_1-xIn_xAs by low pressure metalorganic chemical vapor depositionHESS, K. L; KASEMSET, D. L; DAPKUS, P. D et al.Journal of electronic materials. 1984, Vol 13, Num 5, pp 779-798, issn 0361-5235Article

The effects of V/III ratio and growth temperature on the electrical and optical properties of InP grown by low-pressure metalorganic chemical vapor depositionKASEMSET, D; HESS, K. L; MOHAMMED, K et al.Journal of electronic materials. 1984, Vol 13, Num 4, pp 655-671, issn 0361-5235Article

GaAs/GalAs selective MOCVD epitaxy and planar ion-implantation technique for complex integrated optoelectronic circuit applicationsKIM, M. E; HONG, C. S; KASEMSET, D et al.IEEE electron device letters. 1984, Vol 5, Num 8, pp 306-309, issn 0741-3106Article

Design and process development of a novel multi-wafer OMVPE reactor for growing very uniform GaAs and AlGaAs epitaxial layersRONG-TING HUANG; KASEMSET, D; NOURI, N et al.Journal of electronic materials. 1989, Vol 18, Num 5, pp 603-609, issn 0361-5235, 7 p.Article

A low-loss Ku-band directly modulated fiber-optic linkACKERMAN, E; KASEMSET, D; WANUGA, S et al.IEEE Photonics technology letters. 1991, Vol 3, Num 2, pp 185-187Article

Interfaces for high-speed fiber-optic links : analysis and experimentDARYOUSH, A. S; ACKERMAN, E; SAMANT, N. R et al.IEEE transactions on microwave theory and techniques. 1991, Vol 39, Num 12, pp 2031-2044, issn 0018-9480Conference Paper

Waveguiding, spectral, and threshold properties of a stripe geometry single quantum well laserPRINCE, F. C; MATTOS, T. J. S; PATEL, N. B et al.IEEE journal of quantum electronics. 1985, Vol 21, Num 6, pp 634-639, issn 0018-9197Article