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A Simple Charge Model for Symmetric Double-Gate MOSFETs Adapted to Gate-Oxide-Thickness AsymmetryJANDHYALA, Srivatsava; KASHYAP, Rutwick; ANGHEL, Costin et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 4, pp 1002-1007, issn 0018-9383, 6 p.Article