Monolithic integrated mm-wave circuits on high resistivity siliconSCHÖLLHORN, Claus; KASPER, Erich.Recent research developments in microwave theory & techniques Vol. 2 - 2004. Recent research developments in microwave theory & techniques. 2004, pp 155-182, isbn 81-7895-150-9, 28 p.Book Chapter

Fifth International Conference on Silicon Epitaxy and Heterostructures (ICSI-5)DERRIEN, Jacques; VINH LE THANH; KASPER, Erich et al.Thin solid films. 2008, Vol 517, Num 1, issn 0040-6090, 475 p.Conference Proceedings

Study of silicon/oxides interfaces by means of Si2p resonant photoemissionTALLARIDA, Massimo; SCHMEISSER, Dieter.Thin solid films. 2008, Vol 517, Num 1, pp 447-449, issn 0040-6090, 3 p.Conference Paper

Anisotropy of the surface thermodynamic properties of siliconMÜLLER, P; METOIS, J. J.Thin solid films. 2008, Vol 517, Num 1, pp 65-68, issn 0040-6090, 4 p.Conference Paper

Current topics of silicon germanium devicesKASPER, Erich.Applied surface science. 2008, Vol 254, Num 19, pp 6158-6161, issn 0169-4332, 4 p.Conference Paper

Epitaxy : Away to novel field effect devicesSULIMA, Torsten; ABELEIN, Ulrich; EISELE, Ignaz et al.Thin solid films. 2008, Vol 517, Num 1, pp 365-368, issn 0040-6090, 4 p.Conference Paper

Memory properties of oxide-nitride-oxynitride stack structure using ultra-thin oxynitrided film as tunneling layer for nonvolatile memory device on glassJUNG, Sungwook; HWANG, Sunghyun; YI, J et al.Thin solid films. 2008, Vol 517, Num 1, pp 362-364, issn 0040-6090, 3 p.Conference Paper

Polarization memory of blue and red luminescence from nanocrystalline porous silicon treated by high-pressure water vapor annealingGELLOZ, B; KOYAMA, H; KOSHID, N et al.Thin solid films. 2008, Vol 517, Num 1, pp 376-379, issn 0040-6090, 4 p.Conference Paper

Impact of Ge fraction modulation upon electrical characteristics of hole resonant tunneling diodes with Si/Strained Si_1-xGe_x/Si(100) heterostructureSEO, Takahiro; SAKURABA, Masao; MUROTA, Junichi et al.Thin solid films. 2008, Vol 517, Num 1, pp 110-112, issn 0040-6090, 3 p.Conference Paper

Misfit dislocation generation in SiGe epitaxial layers supersaturated with intrinsic point defectsVDOVIN, V. I; ZAKHAROV, N. D.Thin solid films. 2008, Vol 517, Num 1, pp 278-280, issn 0040-6090, 3 p.Conference Paper

Numerical simulations of the anisotropic elastic field of screw dislocation networks in twist boundariesMADANI, Salah; OUTTAS, Toufik; ADAMI, Lahbib et al.Thin solid films. 2008, Vol 517, Num 1, pp 262-264, issn 0040-6090, 3 p.Conference Paper

Control of electronic charged states of Si-based quantum dots for floating gate applicationMIYAZAKI, S; MAKIHARA, K; IKEDA, M et al.Thin solid films. 2008, Vol 517, Num 1, pp 41-44, issn 0040-6090, 4 p.Conference Paper

Free surface nanopaterning with burried hexagonal dislocations array. Simulation of anisotropic elastic fieldsOUTTAS, Toufik; MADANI, Salah; ADAMI, Lahbib et al.Thin solid films. 2008, Vol 517, Num 1, pp 275-277, issn 0040-6090, 3 p.Conference Paper

Chemical bonding and graded interfacial transition regions at transition metal, Hf(Zr), /high-k gate dielectric, Hf(Zr)O_2, interfacesLUCOVSKY, G; WHITTEN, J. L.Thin solid films. 2008, Vol 517, Num 1, pp 343-345, issn 0040-6090, 3 p.Conference Paper

Local strain in Si/Si_0.6Ge_0.4/Si(100) heterostructures by stripe-shape patterningUHM, Jangwoong; SAKURABA, Masao; MUROTA, Junichi et al.Thin solid films. 2008, Vol 517, Num 1, pp 300-302, issn 0040-6090, 3 p.Conference Paper

Performance and reliability of SiGe photodetectorsSARID, Gadi; GINSBURG, Eyal; DOSUNMU, Femi et al.Thin solid films. 2008, Vol 517, Num 1, pp 132-133, issn 0040-6090, 2 p.Conference Paper

Impact of impurity doping into Si quantum dots with Ge core on their electrical charging characteristicsMAKIHARA, Katsunori; IKEDA, Mitsuhisa; HIGASHI, Seiichiro et al.Thin solid films. 2008, Vol 517, Num 1, pp 306-308, issn 0040-6090, 3 p.Conference Paper

Initial oxidation of HF-acid treated SiGe(100) surfaces under air exposure investigated by synchrotron radiation X-ray photoelectron spectroscopy and IR absorption spectroscopyNARITA, Yuzuru; HIROSE, Fumihiko; NAGATO, Masaya et al.Thin solid films. 2008, Vol 517, Num 1, pp 209-212, issn 0040-6090, 4 p.Conference Paper

Precise control of doping profile and crystal quality improvement of SiGe HBTs using continuous epitaxial growth technologyODA, Katsuya; MIURA, Makoto; SHIMAMOTO, Hiromi et al.Thin solid films. 2008, Vol 517, Num 1, pp 98-100, issn 0040-6090, 3 p.Conference Paper

Reliability of ultra-thin titanium dioxide (TiO₂) films on strained-SiBERA, M. K; MAHATA, C; MAITI, C. K et al.Thin solid films. 2008, Vol 517, Num 1, pp 27-30, issn 0040-6090, 4 p.Conference Paper

Sidewall transfer lithography for reliable fabrication of nanowires and deca-nanometer MOSFETsHALLSTEDT, J; HELLSTRÖM, P.-E; RADAMSON, H. H et al.Thin solid films. 2008, Vol 517, Num 1, pp 117-120, issn 0040-6090, 4 p.Conference Paper

Comprehensive study of low temperature (<1000 °C) oxidation process in SiGe/SOI structuresTANAKA, Masanori; OHKA, Tatsuo; SADOH, Taizoh et al.Thin solid films. 2008, Vol 517, Num 1, pp 251-253, issn 0040-6090, 3 p.Conference Paper

Ex-situ wet clean and in-situ hydrogen clean for Si and SiGe epitaxyKORMANN, Thomas; GARNIER, Philippe; CHABANNE, Guillaume et al.Thin solid films. 2008, Vol 517, Num 1, pp 269-271, issn 0040-6090, 3 p.Conference Paper

High-quality epitaxial Si growth at low temperatures by atmospheric pressure plasma CVDYASUTAKE, K; OHMI, H; KIRIHATA, Y et al.Thin solid films. 2008, Vol 517, Num 1, pp 242-244, issn 0040-6090, 3 p.Conference Paper

Relaxed germanium films on silicon (110)WIETLER, Tobias F; BUGIEL, Eberhard; HOFMANN, Karl R et al.Thin solid films. 2008, Vol 517, Num 1, pp 272-274, issn 0040-6090, 3 p.Conference Paper