DETERMINATION OF THE CAPTURE RATE C_N OF THE GOLD ACCEPTOR LEVEL FROM SINGLE INJECTION N⁺-I-N⁺ SILICON SCLC DIODES.KASSING R; LENZ H.1974; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1974; VOL. 25; NO 1; PP. 131-139; ABS. ALLEM.; BIBL. 25 REF.Article

THE SMALL SIGNAL BEHAVIOR OF SCLC-DIODES WITH DEEP TRAPS.KASSING R; KHALER E.1974; SOLID STATE COMMUNIC.; G.B.; DA. 1974; VOL. 15; NO 3; PP. 673-676; ABS. ALLEM.; BIBL. 4 REF.Article

LOW-FREQUENCY CURRENT OSCILLATIONS IN HIGH-RESISTIVITY, AU-DOPED SILICON JUNCTIONS WITH TWO SCHOTTKY CONTACTSKASSING R; KAHLER E.1972; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1972; VOL. 12; NO 1; PP. 209-213; ABS. ALLEM.; BIBL. 8 REF.Serial Issue

NONEQUILIBRIUM PROPERTIES OF MIS-CAPACITORSKELBERLAU U; KASSING R.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 4; PP. 321-327; BIBL. 13 REF.Article

DETERMINATION OF THE TEMPERATURE DEPENDENCE OF THE CAPTURE CROSS-SECTIONS OF THE GOLD ACCEPTOR LEVEL AND OF THE TEMPERATURE OF CURRENT FILAMENTS IN SILICON PIN DIODESDUDECK I; KASSING R.1978; PHYS. STATUS SOLIDI, A; DDR; DA. 1978; VOL. 49; NO 1; PP. 153-161; ABS. GER; BIBL. 18 REF.Article

THE INFLUENCE OF RECOMBINATION CENTER DATA ON THE I-V CHARACTERISTICS OF SILICON P⁺-I-N⁺ DIODES.DUDECK I; KASSING R.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 11; PP. 4786-4790; BIBL. 22 REF.Article

CURRENT OSCILLATIONS DUE TO FILAMENTARY DOUBLE INJECTION IN DIODES WITH DEEP LEVELSDUDECK I; KASSING R.1979; SOLID STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 4; PP. 361-365; BIBL. 15 REF.Article

THEORY OF NONEQUILIBRIUM PROPERTIES OF MIS CAPACITORS INCLUDING CHARGE EXCHANGE OF INTERFACE STATES WITH BOTH BANDSKELBERLAU U; KASSING R.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 1; PP. 37-45; BIBL. 16 REF.Article

GOLD AS AN OPTIMAL RECOMBINATION CENTER FOR POWER RECTIFIERS AND THYRISTORS.DUDECK I; KASSING R.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 12; PP. 1033-1036; BIBL. 11 REF.Article

NEW RESULTS OF THE TRANSIENT BEHAVIOUR OF SINGLE INJECTION SCLC DIODES WITH ONE DEEP LEVEL.DUDECK I; KASSING R.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 30; NO 2; PP. 489-493; ABS. ALLEM.; BIBL. 7 REF.Article

CURRENT OSCILLATIONS IN HIGH-RESISTIVITY SILICON WITH DEEP LEVELSKAHLER E; KASSING R.1972; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1972; VOL. 13; NO 2; PP. 613-621; ABS. ALLEM.; BIBL. 14 REF.Serial Issue

POSITIVE FLAT BAND VOLTAGES MEASURED ON MIS DIODES CONSISTING OF EVAPORATED CDS FILMSKASSING R; DEPPE HR.1972; THIN SOLID FILMS; NETHERL.; DA. 1972; VOL. 13; NO 1; PP. 27-31; BIBL. 3 REF.Serial Issue

INVESTIGATIONS ON EVAPORATED TE-CDS THIN FILM DIODES.DEPPE HR; SCHRADER L; KASSING R et al.1975; THIN SOLID FILMS; NETHERL.; DA. 1975; VOL. 27; NO 2; PP. 287-295; BIBL. 12 REF.Article

INFLUENCE OF CARRIER TRANSIT TIME ON THE SMALL-SIGNAL ADMITTANCE OF SCLC DIODES.JAGER D; HEIDE MANN R; KASSING R et al.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 42; NO 2; PP. 657-665; ABS. ALLEM.; BIBL. 10 REF.Article

The gold donor and acceptor level in p-type siliconVAN STAA, P; KASSING, R.Solid state communications. 1984, Vol 50, Num 12, pp 1051-1055, issn 0038-1098Article

Thermodynamic properties and superconducting transition temperature of vanadium doped with heavy impurities = Propriétés thermodynamiques et température de transition supraconductrice du vanadium dopé avec des impuretés lourdesTIWARI, M. D; KASSING, R.Physical review. B, Condensed matter. 1988, Vol 37, Num 10, pp 5122-5131, issn 0163-1829, part AArticle

Etching processes for High Aspect Ratio Micro Systems Technology (HARMST)KASSING, R; RANGELOW, I. W.Microsystem technologies. 1996, Vol 3, Num 1, pp 20-27, issn 0946-7076Article

Deep level transient Fourier spectroscopy (DLTFS). A technique for the analysis of deep level propertiesWEISS, S; KASSING, R.Solid-state electronics. 1988, Vol 31, Num 12, pp 1733-1742, issn 0038-1101Article

Investigation of a Pd-Au complex in n-type silicon with DLTFS techniquesSUDJADI, U; WEISS, S; BOCK, A et al.Physica status solidi. A. Applied research. 1995, Vol 149, Num 2, pp 649-658, issn 0031-8965Article

Evaluation of auger electron spectroscopy (AES) depth-profiles by application of factor analysisOESTERSCHULZE, E; MASSELI, K; KASSING, R et al.Fresenius' journal of analytical chemistry. 1991, Vol 341, Num 1-2, pp 70-73, issn 0937-0633Conference Paper

A versatile and modularizable micromachining process for the fabrication of thermal microsensors and microactuatorsFRIEDBERGER, A; KREISL, P; MÜLLER, G et al.Journal of micromechanics and microengineering (Print). 2001, Vol 11, Num 6, pp 623-629, issn 0960-1317Article

Diagnostics of SF₆ plasmas by energy-resolved mass spectrometry : influence of the electrode material on internal plasma parametersNÖDING, M; BECKER, F; KASSING, R et al.Surface & coatings technology. 1999, Vol 111, Num 1, pp 51-55, issn 0257-8972Article

Deposition of TiO₂ thin films by plasma-enhanced decomposition of tetraisopropyltitanateFRENCK, H. J; KULISCH, W; KUHR, M et al.Thin solid films. 1991, Vol 201, Num 2, pp 327-335, issn 0040-6090Article

Determination of the entropy-factor of the gold donor level in silicon by resistivity and DLTS measurementsKASSING, R; COHAUSZ, L; VAN STAA, P et al.Applied physics. A, Solids and surfaces. 1984, Vol 34, Num 1, pp 41-47, issn 0721-7250Article

Sensors for Scanning Probe Microscopy (SPM)OESTERSCHULZE, E; RANGELOW, I; KASSING, R et al.SPIE proceedings series. 2000, pp 683-690, isbn 0-8194-3601-1Conference Paper