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Porous silicon formation in N^-/N⁺/N^- doped structuresTSAO, S. S; GUILINGER, T. R; KELLY, M. J et al.Journal of the Electrochemical Society. 1991, Vol 138, Num 6, pp 1739-1743, issn 0013-4651Article

Asymmetric tilt boundaries and generalized heteroepitaxyDODSON, B. W; MYERS, D. R; DATYES, A. K et al.Physical review letters. 1988, Vol 61, Num 23, pp 2681-2684, issn 0031-9007Article

Usefulness of two-dimensional echocardiography in diagnosing right ventricular hypertrophyCACHO, A; RAVI PRAKASH; RADHA SARMA et al.Chest. 1983, Vol 84, Num 2, pp 154-157, issn 0012-3692Article

Device performance of transistors with high-κ dielectrics using cross-wafer-scaled interface-layer thicknessO'SULLIVAN, B. J; KAUSHIK, V. S; RAGNARSSON, L.-A et al.IEEE electron device letters. 2006, Vol 27, Num 7, pp 546-548, issn 0741-3106, 3 p.Article

Safety and efficacy of digital rectal examination in patients with acute myocardial infarctionAKHTAR, A. J; MORAN, D; GANESAN, K et al.The American journal of gastroenterology. 2000, Vol 95, Num 6, pp 1463-1465, issn 0002-9270Article

Underuse and overuse of diagnostic testing for coronary artery disease in patients presenting with new-onset chest painCARLISLE, D. M; LEAPE, L. L; BROOK, R. H et al.The American journal of medicine. 1999, Vol 106, Num 4, pp 391-398, issn 0002-9343Article

Microstructure of pores in n⁺ siliconKAUSHIK, V. S; DATYE, A. K; TSAO, S. S et al.Materials letters (General ed.). 1991, Vol 11, Num 3-4, pp 109-114, issn 0167-577X, 6 p.Article

Structural integrity and thermal stability of TiN/CoSi₂ used as local interconnect in a self-aligned CoSi₂ processHEGDE, R. I; JONES, R. E; KAUSHIK, V. S et al.Applied surface science. 1991, Vol 52, Num 1-2, pp 59-69, issn 0169-4332Article

Coherent precipitation of silicon nitride in siliconKAUSHIK, V. S; DATYE, A. K; KENDALL, D. L et al.Applied physics letters. 1988, Vol 52, Num 21, pp 1782-1784, issn 0003-6951Article