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EFFET DIMENSIONNEL QUANTIQUE DANS LES COUCHES MINCESKAWAZU A.1976; OYO BUTURI; JAP.; DA. 1976; VOL. 45; NO 2; PP. 158-167; BIBL. 43 REF.Article

AN INFLUENCE OF THE FIRST ADLAYER STRUCTURE ON THE STICKING COEFFICIENT OF THE SUCCESSIVE ADSORPTION IN A SYSTEM OF BISMUTH ON SILICON (111) SURFACESAITO Y; KAWAZU A; TOMINAGA G et al.1981; SURF. SCI.; ISSN 0039-6028; NLD; DA. 1981; VOL. 103; NO 2-3; PP. 563-575; BIBL. 7 REF.Article

GROWTH OF BISMUTH LAYERS ON SI(100) SURFACES = CROISSANCE DE COUCHES DE BISMUTH SUR DES SURFACES DE SI(100)KAWAZU A; OTSUKI T; TOMINAGA G et al.1981; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1981; VOL. 20; NO 3; PP. 553-560; BIBL. 17 REF.Article

APPAREILLAGE POUR LE DEPOT PAR FAISCEAU MOLECULAIREKAWAZU A; SAITO Y; TOMINAGA G et al.1977; J. VACUUM SOC. JAP.; JAP.; DA. 1977; VOL. 20; NO 7; PP. 247-252; ABS. ANGL.; BIBL. 7 REF.Article

STRUCTURE AND ELECTRICAL PROPERTIES OF THIN BISMUTH FILMS.KAWAZU A; SAITO Y; ASAHI H et al.1976; THIN SOLID FILMS; NETHERL.; DA. 1976; VOL. 37; NO 2; PP. 261-266; BIBL. 8 REF.Article

ADSORPTION OF BISMUTH ON SI(110) SURFACESOYAMA T; OHI S; KAWAZU A et al.1981; SURF. SCI.; NLD; DA. 1981-08; VOL. 109; NO 1; PP. 82-94; BIBL. 12 REF.Article

ADSORPTION OF BISMUTH ON SI(110) SURFACESOYAMA T; OHI S; KAWAZU A et al.1981; SURF. SCI.; NLD; DA. 1981-08; VOL. 109; NO 1; PP. 82-94; BIBL. 12 REF.Article

ADSORPTION OF BISMUTH ON SI(110) SURFACESOMAYA T; OHI S; KAWAZU A et al.1981; SURF. SCI.; ISSN 0039-6028; NLD; DA. 1981; VOL. 109; NO 1; PP. 82-94; BIBL. 12 REF.Article

Geometric structure of the Si(111)√3×√3'pü-Ga surfaceKAWAZU, A; SAKAMA, H.Physical review. B, Condensed matter. 1988, Vol 37, Num 5, pp 2704-2706, issn 0163-1829Article

Recent progress in low-energy electron diffraction: theory and application to semiconductor surfacesSAKAMA, H; KAWAZU, A.Materials science & engineering. R, Reports. 1995, Vol 14, Num 6, pp 255-317, issn 0927-796XArticle

The structural properties of Si(110)1 × 1-Bi surfacesSAKAMA, H; KAWAZU, A.Surface science. 1995, Vol 342, Num 1-3, pp 199-205, issn 0039-6028Article

Structure of indium-adsorbed Si(110) surfaceSAKAMA, H; WATANABE, K; KAWAZU, A et al.Surface science. 1993, Vol 298, Num 1, pp 63-70, issn 0039-6028Article

ICFSI-2: second international conference on the formation of semiconductor interfaces: [selected papers], Takarazuka, Japan, November 8-12, 1988HIRAKI, Akio; KAWAZU, A; OHDOMARI, I et al.Applied surface science. 1989, Vol 41-42, issn 0169-4332, XVI-680 p. [696 p.]Conference Proceedings

Structural determination of Si(100)2×2-Al by tensor LEEDSAKAMA, H; MURAKAMI, K; NISHIKATA, K et al.Physical review. B, Condensed matter. 1993, Vol 48, Num 8, pp 5278-5281, issn 0163-1829Article

Structural studies of Si(111)2×1 surfaces using low-energy electron diffractionSAKAMA, H; KAWAZU, A; UEDA, K et al.Physical review. B, Condensed matter. 1986, Vol 34, Num 2, pp 1367-1370, issn 0163-1829Article

Growth mechanism of thin films of a charge transfer complex, TTF-TCNQ, formed on alkali halideYASE, K; ARA, N; KAWAZU, A et al.Molecular crystals and liquid crystals science and technology. Section A, Molecular crystals and liquid crystals. 1994, Vol 247, pp 185-190, issn 1058-725XConference Paper

Evaporation rate and saturated vapor pressure of functional organic materialsYASE, K; TAKAHASHI, Y; ARA-KATO, N et al.Japanese journal of applied physics. 1995, Vol 34, Num 2A, pp 636-637, issn 0021-4922, 1Article

Observation of step bunching on vicinal GaAs(100) studied by scanning tunneling microscopyHATA, K; KAWAZU, A; OKANO, T et al.Applied physics letters. 1993, Vol 63, Num 12, pp 1625-1627, issn 0003-6951Article

Adsorption of bismuth on Si(110) surfaces studied by scanning tunneling microscopySAKAMA, H; KAWAZU, A; SUEYOSHI, T et al.Japanese journal of applied physics. 1993, Vol 32, Num 6B, pp 2929-2933, issn 0021-4922, 1Conference Paper

Low-energy electron diffraction analysis of the buried-heteroatom type Pd(100)-p(2 × 2)-p4g-Al surfaceONISHI, H; SAKAMA, H; ARUGA, T et al.Surface science. 2000, Vol 444, Num 1-3, pp 7-17, issn 0039-6028Article

Low-energy electron diffraction analysis of the pd(100)-p(2 x 2)-p4g-Al surface : a buried-heteroatom structureONISHI, H; SAKAMA, H; ARUGA, T et al.Surface science. 1997, Vol 392, Num 1-3, pp L51-L55, issn 0039-6028Article

High quality thin films of fullerene by means of nucleation-control on the substrate surfaceYASE, K; ARA, N; KAZAOUI, S et al.Molecular crystals and liquid crystals science and technology. Section A, Molecular crystals and liquid crystals. 1994, Vol 247, pp 179-184, issn 1058-725XConference Paper

Nature of tip-sample interaction in dynamic mode atomic force microscopyKAGESHIMA, M; IMAYOSHI, T; YAMADA, H et al.Japanese journal of applied physics. 1997, Vol 36, Num 12A, pp 7354-7357, issn 0021-4922, 1Article

Scanning tunneling microscopy. International colloquiumKAWAZU, A; TSUKADA, M; MORITA, S et al.Japanese journal of applied physics. 1994, Vol 33, Num 6B, issn 0021-4922, 1Conference Proceedings

Observation of hydrogen-terminated silicon (111) surface by ultrahigh-vacuum atomic force microscopyKAGESHIMA, M; YAMADA, H; MORITA, Y et al.Japanese journal of applied physics. 1993, Vol 32, Num 9B, pp L1321-L1323, issn 0021-4922, 2Article

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