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ION-INDUCED X-RAY MEASUREMENTS OF PROTON DECHANNELING IN SILICON COVERED WITH AMORPHOUS LAYERSKERKOW H; KREYSCH G.1981; RADIAT. EFF.; ISSN 0033-7579; GBR; DA. 1981; VOL. 54; NO 3-4; PP. 141-148; BIBL. 8 REF.Article

EIN ROENTGENSPEKTROMETRISCHER MESSPLATZ ZUM NACHWEIS WEICHER ROENTGENSTRAHLUNG. = UN DISPOSITIF DE MESURE PAR SPECTROMETRIE DE RAYONS X POUR LA DETECTION DE RAYONS X MOUSKERKOW H; KUDELLA F.1975; EXPER. TECH. PHYS.; DTSCH.; DA. 1975; VOL. 23; NO 3; PP. 261-273; ABS. ANGL.; BIBL. 24 REF.Article

COMPARATIVE MEASUREMENTS OF PROTON DECHANNELING IN SILICON UNDER CHANNELING, BLOCKING AND DOUBLE ALIGNMENT CONDITIONSKERKOW H; PETSCH H; TAEUBNER F et al.1980; RAD. EFFECTS; GBR; DA. 1980; VOL. 50; NO 3-6; PP. 169-173; BIBL. 6 REF.Article

DISORDER PRODUCTION IN ION IMPLANTED SILICONKERKOW H; LUKASCH B; PIPPIG R et al.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 70; NO 2; PP. 489-495; ABS. GER; BIBL. 15 REF.Article

DISORDER PRODUCTION IN ION IMPLANTED SILICON = UNORDNUNGSERZEUGUNG IN IONENIMPLANTIERTEM SILIZIUM = PRODUCTION DESORDONNEE DANS DU SILICIUM IMPLANTE IONIQUEMENTKERKOW H; LUKASCH B; PIPPIG R et al.1982; PHYS. STATUS SOLIDI (A), APPL. RES.; DDR; DA. 1982-04; VOL. 70; NO 2; PP. 489-495; BIBL. 15 REF.Article

ENHANCEMENTS OF XE(M)-RADIATION DURING CHANNELLING OF XE-IONS IN COPPER CRYSTALSKUDELLA F; KERKOW H; WEDELL R et al.1979; RAD. EFFECTS; GBR; DA. 1979; VOL. 41; NO 1; PP. 47-55; BIBL. 10 REF.Article

MEASUREMENT OF THE THICKNESS OF THIN LAYERS BY PROTON-INDUCED X-RAY EMISSION = MESURE DE L'EPAISSEUR DE COUCHES MINCES PAR EMISSION RX INDUITE PAR PROTONSKERKOW H; KREYSCH G; STOLLE R et al.1979; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1979; VOL. 62; NO 1; PP. 73-81; BIBL. 12 REF.Article

CALORIMETRIC DETERMINATION OF THE FORMATION ENERGY FOR AN AMORPHOUS LAYER ON A CRYSTALLINE SILICON SUBSTRATEKERKOW H; KREYSCH G; LUKASCH B et al.1983; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1983; VOL. 75; NO 1; PP. 251-254; ABS. GER; BIBL. 13 REF.Article

PROTON-INDUCED L-SHELL IONIZATION CROSS-SECTIONS OF ELEMENTS WITH 28 <= Z2 <= 79 FOR PROJECTILE ENERGIES BETWEEN 70 AND 500 KEVPETUKHOV VP; ROMANOVSKII EA; KERKOW H et al.1980; PHYS. STATUS SOLIDI, SECT. A, APPL. RES.; DDR; DA. 1980-07-16; VOL. 60; NO 1; PP. 79-83; BIBL. 10 REF.Article

Flux dependence of damage accumulation in silicon during ion bombardmentHOLLDACK, K; KERKOW, H.Physica status solidi. A. Applied research. 1986, Vol 98, Num 2, pp 527-534, issn 0031-8965Article

Flux dependence of damage accumulation in silicon during ion bombardmentHOLLDACK, K; KERKOW, H.Physica status solidi. A. Applied research. 1986, Vol 98, Num 2, pp 527-534, issn 0031-8965Article

A NEW EXPERIMENTAL METHOD TO DETERMINE DAMAGE PROFILES BY RUTHERFORD BACKXATTERINGBERNHARD F; KERKOW H; PIETSCH H et al.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 60; NO 1; PP. 59-62; ABS. GER; BIBL. 8 REF.Article

The influence of foreigen atoms on the epitaxial annealing of ion-implanted siliconKERKOW, H; KREYSCH, G; LUKASCH, B et al.Physica status solidi. A. Applied research. 1984, Vol 82, Num 1, pp 125-133, issn 0031-8965Article

Kinetics of furnace annealing of As-implanted siliconKERKOW, H; LUKASCH, B; KREYSCH, G et al.Physica status solidi. A. Applied research. 1983, Vol 76, Num 2, pp K203-K207, issn 0031-8965Article

Heavy ion channeling implantation processes in single crystalsABBAS, M; KERKOW, H; WEDELL, R et al.Physica status solidi. B. Basic research. 1990, Vol 159, Num 2, pp 597-608, issn 0370-1972Article

Calorimetric determination of the formation energy for an amorphous layer on a crystalline silicon substrate = Détermination calorimétrique de l'énergie de formation d'une couche amorphe sur un substrat de silicium cristallin = Kalorimetrische Bestimmung der Bildungsenergie einer amorphen Schicht auf einem kristallinen Silizium-SubstratKERKOW, H; KREYSCH, G; LUKASCH, B et al.Physica status solidi. A. Applied research. 1983, Vol 75, Num 1, pp 251-254, issn 0031-8965Article

Rate effects during radiation-enhanced diffusion of boron in siliconHOLLDACK, K; KERKOW, H; GERICKE, M et al.Physica status solidi. A. Applied research. 1987, Vol 102, Num 2, pp 633-638, issn 0031-8965Article

Kinetics of furnace annealing of As-implanted siliconKERKOW, H; LUKASCH, B; KREYSCH, G et al.Physica status solidi. A. Applied research. 1983, Vol 76, Num 2, pp K203-K207, issn 0031-8965Article

The influence of foreign atoms on the epitaxial annealing of ion-implanted silicon = Der Fremdatomeinfluss auf das epitaktische Gluehen von ionenimplantiertem SiliziumKERKOW, H; KREYSCH, G; LUKASCH, B et al.Physica status solidi. A. Applied research. 1984, Vol 82, Num 1, pp 125-133, issn 0031-8965Article

Proton-induced L-shell X-ray emission cross-sections of elements with 24 ≤ Z2 ≤ 50 for projectile energies between 30 and 350 keV = Wirkungsquerschnitte der protoneninduzierten L-Schalen-Roentgenemission von Elementen mit 24 ≤ Z2 ≤ 50 fuer Projektilenergien zwischen 30 und 350 keVKREYSCH, G; KERKOW, H; BOGDANOV, R.I et al.Physica status solidi. A. Applied research. 1983, Vol 78, Num 2, pp 507-525, issn 0031-8965Article

Electrical and optical properties of titanium-related centers in siliconTILLY, L; GRIMMEISS, H. G; PETTERSSON, H et al.Physical review. B, Condensed matter. 1991, Vol 43, Num 11, pp 9171-9177, issn 0163-1829, 7 p.Article

Proton-induced L-shell X-ray emission cross-sections of elements with 24Z50 for projectile energies between 30 and 350 keVKREYSCH, G; KERKOW, H; BOGDANOV, R. I et al.Physica status solidi. A. Applied research. 1983, Vol 78, Num 2, pp 507-525, issn 0031-8965Article

Electrical and optical properties of molybdenum and tungsten related defects in siliconPETTERSSON, H; GRIMMEISS, H. G; TILLY, L et al.Semiconductor science and technology. 1991, Vol 6, Num 4, pp 237-242, issn 0268-1242, 6 p.Article

Alignment of the M3 subshell of Au atoms by proton impactBORISOV, A. M; KERKOW, H; PETUKHOV, V. P et al.Journal of physics. B. Atomic and molecular physics. 1983, Vol 16, Num 16, pp L495-L498, issn 0022-3700Article

Energy dependence of the proton-induced convoy electron yieldKERKOW, H; PETUKHOV, V. P; ROMANOVSKI, E. A et al.Vacuum. 1996, Vol 47, Num 5, pp 433-436, issn 0042-207XArticle

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