THE STRICT UPPER LIMIT FOR DISSOCIATION ENERGY OF AN "ANISOTROPIC" EXCITONIC MOLECULE.KHARTSIEV VE.1975; SOLID STATES COMMUNIC.; G.B.; DA. 1975; VOL. 16; NO 8; PP. 977-980; BIBL. 19 REF.Article

THEOREMES DE TYPE HELLMANN-FEYNMAN POUR LES SYSTEMES NON ADIABATIQUES STATIONNAIRESGUTLYANSKIJ ED; KHARTSIEV VE.1976; ZH. EKSPER. TEOR. FIZ.; S.S.S.R.; DA. 1976; VOL. 71; NO 2; PP. 472-477; ABS. ANGL.; BIBL. 14 REF.Article

BINDING-ENERGY CALCULATIONS FOR MULTIPLE BOUND EXCITONS IN SILICON.WUNSCHE HJ; KHARTSIEV VE; HENNEBERGER K et al.1978; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1978; VOL. 85; NO 1; PP. K53-K56; BIBL. 6 REF.Article

BINDING-ENERGY CALCULATIONS FOR MULTIPLE BOUND EXCITONSWUNSCHE HJ; HENNEBERGER K; KHARTSIEV VE et al.1978; PHYS. STATUS SOLIDI, B; DDR; DA. 1978; VOL. 86; NO 2; PP. 505-515; ABS. GER; BIBL. 25 REF.Article

APPLICATION OF HARRISON'S FIRST-PRINCIPLE PSEUDOPOTENTIAL METHOD FOR SEMICONDUCTORS. II. CALCULATION OF ENERGY BAND STRUCTURES.KOTOVA LV; GALAKTIONOV EV; KHARTSIEV VE et al.1974; ACTA PHYS. ACAD. SCI. HUNGAR.; HONGR.; DA. 1974; VOL. 36; NO 3; PP. 311-322; BIBL. 33 REF.Article