au.\*:("KIDRON I")
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TWO-DIMENSIONAL EFFECTS IN INTRINSIC PHOTOCONDUCTIVE INFRARED DETECTORSKOLODNY A; KIDRON I.1982; INFRARED PHYS.; ISSN 0020-0891; GBR; DA. 1982; VOL. 22; NO 1; PP. 9-22; BIBL. 18 REF.Article
FIELD-INDUCED TUNNEL DIODE IN INDIUM ANTIMONIDE.MARGALIT S; SHAPPIR J; KIDRON I et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 9; PP. 3999-4001; BIBL. 7 REF.Article
N-CHANNEL MOS TRANSISTORS IN MERCURY-CADMIUM-TELLURIDEKOLODNY A; SHACHAM DIAMAND YJ; KIDRON I et al.1980; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 3; PP. 591-595; BIBL. 15 REF.Article
N-CHANNEL INSULATED-GATE FIELD-EFFECT TRANSISTORS IN HG1-XCDXTE WITH X=0.215NEMIROVSKY Y; MARGALIT S; KIDRON I et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 6; PP. 466-468; BIBL. 7 REF.Article
Haynes-Shockley experiment on n-type HgCdTeSHACHAM-DIAMAND, Y; KIDRON, I.Journal of applied physics. 1984, Vol 56, Num 4, pp 1104-1108, issn 0021-8979Article
Bulk tunneling contribution to the reverse breakdown characteristics of InSb gate controlled diodesADAR, R; NEMIROVSKY, Y; KIDRON, I et al.Solid-state electronics. 1987, Vol 30, Num 12, pp 1289-1293, issn 0038-1101Article
GROWTH AND PROPERTIES OF HG1-XCDXTE EPITAXIAL LAYERSNEMIROVSKY Y; MARGALIT S; FINKMAN E et al.1982; JOURNAL OF ELECTRONIC MATERIALS; ISSN 0361-5235; USA; DA. 1982; VOL. 11; NO 1; PP. 133-153; BIBL. 15 REF.Article