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MELT GROWTH OF ZNSE CRYSTALS UNDER ARGON PRESSURE.KIKUMA I; FURUKOSHI M.1977; J. CRYST. GROWTH; NETHERL.; DA. 1977; VOL. 41; NO 1; PP. 103-108; BIBL. 10 REF.Article

GROWTH AND ELECTRICAL PROPERTIES OF HIGHLY-CONDUCTIVE AS-GROWN ZINC SELENIDE CRYSTALS GROWN FROM THE MELTKIKUMA I; FURUKOSHI M.1981; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1981; VOL. 20; NO 12; PP. 2307-2311; BIBL. 14 REF.Article

TEMPERATURE DISTRIBUTION NEAR THE GROWING VAPOR-CRYSTAL INTERFACE IN PIPER-POLICH METHOD.KIKUMA I; FURUKOSHI M.1975; JAP. J. APPL. PHYS.; JAP.; DA. 1975; VOL. 14; NO 3; PP. 325-329; BIBL. 16 REF.Article

FORMATION OF DEFECTS IN ZINC SELENIDE CRYSTALS GROWN FROM THE MELT UNDER ARGON PRESSUREKIKUMA I; FURUKOSHI M.1978; J. CRYST. GROWTH; NLD; DA. 1978; VOL. 44; NO 4; PP. 467-472; BIBL. 18 REF.Article

SOLUTION GROWTH OF ZNSE CRYSTALS USING IN-ZN SOLVENTSKIKUMA I; FURUKOSHI M.1980; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1980; VOL. 50; NO 3; PP. 654-658; BIBL. 16 REF.Article

Effect of seed annealing on ZnSe single-crystals grown by vertical sublimation methodKATO, H; KIKUMA, I.Journal of crystal growth. 2000, Vol 212, Num 1-2, pp 92-96, issn 0022-0248Article

Direct observation of the 3C-2H transformation in ZnSe by high-temperature X-ray diffractionKIKUMA, I; FURUKOSHI, M.Journal of crystal growth. 1985, Vol 71, Num 1, pp 136-140, issn 0022-0248Article

Growth and properties of low-resistivity n-type ZnSe crystals grown from the melt with excess Zn under argon pressureKIKUMA, I; FURUKOSHI, M.Japanese journal of applied physics. 1985, Vol 24, Num 12, pp L941-L943, issn 0021-4922, part 2Article

Crystal structure of ZnSe crystals grown from the melt under pressureKIKUMA, I; FURUKOSHI, M.Journal of crystal growth. 1983, Vol 63, Num 2, pp 410-412, issn 0022-0248Article

Mirror polishing of InP and InSb wafers with an abrasive bromine-free solutionMORISAWA, Y; KIKUMA, I; TAKAYAMA, N et al.Hyomen gijutsu. 1993, Vol 44, Num 12, pp 1104-1107, issn 0915-1869Article

In situ annealing of melt-grown ZnSe crystals under Zn partial pressureKIKUMA, I; MATSUO, M; KOMURO, T et al.Japanese journal of applied physics. 1992, Vol 31, Num 5A, pp L531-L534, issn 0021-4922, 2Article

Growthand and properties of ZnSe crystals by a modified Bridgman methodKIKUMA, I; MATSUO, M; KOMURO, T et al.Japanese journal of applied physics. 1991, Vol 30, Num 11A, pp 2718-2722, issn 0021-4922, 1Article

Effect of Zn partial pressure during growth on electrical properties of ZnSe crystals grown from the meltKIKUMA, I; KIKUCHI, A; FURUKOSHI, M et al.Japanese journal of applied physics. 1990, Vol 29, Num 11, pp L1963-L1965, issn 0021-4922, 2Article

Crystal growth of ZnO bulk by CVT method using PVAUDONO, H; SUMI, Y; YAMADA, S et al.Journal of crystal growth. 2008, Vol 310, Num 7-9, pp 1827-1831, issn 0022-0248, 5 p.Article

Effect of SiO2 powder on mirror polishing of InP wafersMORISAWA, Y; KIKUMA, I; TAKAYAMA, N et al.Journal of electronic materials. 1997, Vol 26, Num 1, pp 34-36, issn 0361-5235Article

Lattice parameter of ZnSe crystals grown from melt under Zn partial pressureUDONO, H; KIKUMA, I; OKADA, Y et al.Journal of crystal growth. 1998, Vol 193, Num 1-2, pp 39-42, issn 0022-0248Article

Growth of ZnSe crystals free from rod-like low angle grain boundaries from the melt under argon pressureKIKUMA, I; SEKINE, M; FURUKOSHI, M et al.Journal of crystal growth. 1986, Vol 75, Num 3, pp 609-612, issn 0022-0248Article

Effects of substrate temperature on crystallinity and photoconductivity of vacuum deposited titanylphthalocyanine thin filmsKONTANI, T; URAO, R; MURANOI, T et al.Hyomen gijutsu. 1995, Vol 46, Num 9, pp 817-821, issn 0915-1869Article

The effect of (Al, I) impurities and heat treatment on lattice parameter of single-crystal ZnSeUDONO, H; KIKUMA, I; OKADA, Y et al.Journal of crystal growth. 2000, Vol 214-15, pp 889-893, issn 0022-0248Conference Paper

Effects of molecular configurations on the electrical resistivity of titanylphthalocyanine thin filmsKONTANI, T; MURANOI, T; KIKUMA, I et al.Japanese journal of applied physics. 1995, Vol 34, Num 7A, pp 3654-3657, issn 0021-4922, 1Article

Growth of ZnSe crystals from the melt under Zn partial pressureKIKUMA, I; KIKUCHI, A; YAGETA, M et al.Journal of crystal growth. 1989, Vol 98, Num 3, pp 302-308, issn 0022-0248Article

Mirror polishing of InP wafer surfaces with NaOCl-citric acidMORISAWA, Y; KIKUMA, I; TAKAYAMA, N et al.Applied surface science. 1996, Vol 92, Num 1-4, pp 147-150, issn 0169-4332Conference Paper

Effects of anthracene doping on electrical and light-emitting behavior of 8-hydroxyquinoline-aluminum-based electroluminescent devicesTAKEUCHI, M; MASUI, H; KIKUMA, I et al.Japanese journal of applied physics. 1992, Vol 31, Num 4B, pp L498-L500, issn 0021-4922, 2Article

Electrical properties of p-type β-FeSi2 single crystals grown from Ga and Zn solventsUDONO, H; KIKUMA, I.Thin solid films. 2004, Vol 461, Num 1, pp 188-192, issn 0040-6090, 5 p.Conference Paper

Influence of naphthacene doping on the electrical and light-emitting behavior of 8-hydroxyquinoline aluminum based electroluminescent devicesWADA, T; YOGO, Y; KIKUMA, I et al.Applied surface science. 1993, Vol 65-66, pp 376-380, issn 0169-4332Conference Paper

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