Flexible resistive switching memory devices composed of solution-processed GeO₂:S filmsCHUNG, Isaac; CHO, Kyoungah; YUN, Junggwon et al.Microelectronic engineering. 2012, Vol 97, pp 122-125, issn 0167-9317, 4 p.Article

Floating Body Effect in Partially Depleted Silicon Nanowire Transistors and Potential Capacitor-Less One-Transistor DRAM ApplicationsLEE, Myeongwon; MOON, Taeho; KIM, Sangsig et al.IEEE transactions on nanotechnology. 2012, Vol 11, Num 2, pp 355-359, issn 1536-125X, 5 p.Article

Transparent heaters based on solution-processed indium tin oxide nanoparticlesIM, Kiju; CHO, Kyoungah; KIM, Jonghyun et al.Thin solid films. 2010, Vol 518, Num 14, pp 3960-3963, issn 0040-6090, 4 p.Article

N-channel thin-film transistors constructed on plastic by solution processes of HgSe nanocrystalsJANG, Jaewon; CHO, Kyoungah; YUN, Junggwon et al.Microelectronic engineering. 2009, Vol 86, Num 10, pp 2030-2033, issn 0167-9317, 4 p.Article

Luminescence shift of electrospun ZnO/MEH-PPV/PEO composite nanofibersMI YEON CHO; CHO, Kyoungah; KIM, Sangsig et al.Journal of luminescence. 2013, Vol 134, pp 79-82, issn 0022-2313, 4 p.Article

Nano-floating gate memory based on ZnO thin-film transistors and Al nanoparticlesPARK, Byoungjun; CHO, Kyoungah; KIM, Sungsu et al.Solid state sciences. 2010, Vol 12, Num 12, pp 1966-1969, issn 1293-2558, 4 p.Article

Capacitance characteristics of MOS capacitors embedded with colloidally synthesized gold nanoparticlesPARK, Byoungjun; CHO, Kyoungah; KIM, Hyunsuk et al.Semiconductor science and technology. 2006, Vol 21, Num 7, pp 975-978, issn 0268-1242, 4 p.Article

Simulation of a new lateral trench IGBT employing effective p + diverter for improving latch-up characteristicsEY GOO KANG; KIM, Sangsig; MAN YOUNG SUNG et al.Microelectronics journal. 2001, Vol 32, Num 9, pp 749-753, issn 0959-8324Article

Electrical Characteristics of GaAs Nanowire-Based MESFETs on Flexible PlasticsYOON, Changjoon; CHO, Gyoujin; KIM, Sangsig et al.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 4, pp 1096-1101, issn 0018-9383, 6 p.Article

Zinc cadmium oxide thin film transistors fabricated at room temperatureLEE, Deuk-Hee; KIM, Sangsig; SANG YEOL LEE et al.Thin solid films. 2011, Vol 519, Num 13, pp 4361-4365, issn 0040-6090, 5 p.Article

Electrical characteristics of polycrystalline Si layers embedded into high-k Al₂O₃ gate layersPARK, Byoungjun; CHO, Kyoungah; KIM, Sangsig et al.Applied surface science. 2008, Vol 254, Num 23, pp 7905-7908, issn 0169-4332, 4 p.Conference Paper

Synthesis and characterization of electrospun polymer nanofibers incorporated with CdTe nanoparticlesCHO, Kyoungah; KIM, Mihyun; CHOI, Jinyong et al.Synthetic metals. 2010, Vol 160, Num 9-10, pp 888-891, issn 0379-6779, 4 p.Article

Capacitance-voltage characterization of Ge-nanocrystal-embedded MOS capacitors with a capping Al₂O₃ layerCHOI, Samjong; PARK, Byoungjun; KIM, Hyunsuk et al.Semiconductor science and technology. 2006, Vol 21, Num 3, pp 378-381, issn 0268-1242, 4 p.Article

Time-dependent photocurrent of a CdTe nanoparticle film under the above-gap illuminationKIM, Jin-Hyoung; KIM, Hyunsuk; CHO, Kyoungah et al.Solid state communications. 2005, Vol 136, Num 4, pp 220-223, issn 0038-1098, 4 p.Article

Ga₂O₃ nanomaterials synthesized from ball-milled GaN powdersLEE, Jong-Soo; PARKA, Kwangsue; NAHM, Sahn et al.Journal of crystal growth. 2002, Vol 244, Num 3-4, pp 287-295, issn 0022-0248Article

Fabrication of thin-film transistors based on CdTe/CdHgTe core-shell nanocrystalsKIM, Dong-Won; CHO, Kyoungah; KIM, Hyunsuk et al.Microelectronic engineering. 2007, Vol 84, Num 5-8, pp 1643-1646, issn 0167-9317, 4 p.Conference Paper

Flexible Logic Gates Composed of Si-Nanowire-Based Memristive SwitchesMOON, Taeho; JUNG, Ji-Chul; YONG HAN et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 12, pp 3288-3291, issn 0018-9383, 4 p.Article

Electrical characteristics of Si-nanoparticle/Si-nanowire-based field-effect transistorsKANG, Jeongmin; KEEM, Kihyun; JEONG, Dong-Young et al.Journal of materials science. 2008, Vol 43, Num 10, pp 3424-3428, issn 0022-2461, 5 p.Conference Paper

Growth of zinc oxide nanowires by thermal evaporation on vicinal Si(1 0 0) substrateLEE, Jong-Su; KANG, Myung-Il; KIM, Sangsig et al.Journal of crystal growth. 2003, Vol 249, Num 1-2, pp 201-207, issn 0022-0248, 7 p.Article

Resistance switching memory devices constructed on plastic with solution-processed titanium oxideYUN, Junggwon; CHO, Kyoungah; PARK, Byoungjun et al.Journal of material chemistry. 2009, Vol 19, Num 14, pp 2082-2085, issn 0959-9428, 4 p.Article

Nitrogen-doped gallium phosphide nanowiresHEE WON SEO; SEUNG YONG BAE; PARK, Jeunghee et al.Chemical physics letters. 2003, Vol 378, Num 3-4, pp 420-424, issn 0009-2614, 5 p.Article

Half wave rectification of inorganic/organic heterojunction diode at the frequency of 1 kHzLEE, Deuk-Hee; PARK, Dong-Hoon; KIM, Sangsig et al.Thin solid films. 2011, Vol 519, Num 16, pp 5658-5661, issn 0040-6090, 4 p.Article

Effect of Ag doping on the performance of ZnO thin film transistorLEE, Deuk-Hee; PARK, Ki-Ho; KIM, Sangsig et al.Thin solid films. 2011, Vol 520, Num 3, pp 1160-1164, issn 0040-6090, 5 p.Article

P-type silicon nanowire-based nano-floating gate memory with Au nanoparticles embedded in Al₂O₃ gate layersYOON, Changjoon; CHO, Kyoungah; LEE, Jae-Hyun et al.Solid state sciences. 2010, Vol 12, Num 5, pp 745-749, issn 1293-2558, 5 p.Article

Electrical Characteristics of Hybrid Nanoparticle-Nanowire DevicesJEONG, Dong-Young; KEEM, Kihyun; PARK, Byoungjun et al.IEEE transactions on nanotechnology. 2009, Vol 8, Num 5, pp 650-653, issn 1536-125X, 4 p.Article