Damage during microchanneling analysis using 400 keV ion microprobeHIRAI, K; TAKAI, M; KINOMURA, A et al.Japanese journal of applied physics. 1992, Vol 31, Num 5B, pp L649-L651, issn 0021-4922, 2Article

HTO oral administration in mice. I, Threshold dose rate for haematopoietic deathYAMAMOTO, O; YOKORO, K; SEYAMA, T et al.International journal of radiation biology (Print). 1990, Vol 57, Num 3, pp 543-549, issn 0955-3002Article

Oral administration of tritiated water (HTO) in mouse. II: Tumour developmentYAMAMOTO, O; SEYAMA, T; JO, T et al.International journal of radiation biology (Print). 1995, Vol 68, Num 1, pp 47-54, issn 0955-3002Article

Formation of crystalline SiC buried layer by high-dose implantation of MeV carbon ions at high temperatureCHAYAHARA, A; KIUCHI, M; KINOMURA, A et al.Japanese journal of applied physics. 1993, Vol 32, Num 9A, pp L1286-L1288, issn 0021-4922, 2Article

Three-dimensional analysis of locally implanted atoms by MeV helium ion microprobeKINOMURA, A; TAKAI, M; CHAYAHARA, A et al.Japanese journal of applied physics. 1992, Vol 31, Num 1, pp 105-109, issn 0021-4922, 1Article

Development of a Slow Positron Beam System for in-situ Lifetime Measurements during Ion Beam IrradiationKINOMURA, A; SUZUKI, R; OHDAIRA, T et al.Physica. B, Condensed matter. 2012, Vol 407, Num 14S, pp 111-116, issn 0921-4526, 6 p.Conference Paper

Silicon carbide film growth using dual isotopical ²⁸Si^- and ¹²C⁺ ion speciesTSUBOUCHI, N; CHAYAHARA, A; KINOMURA, A et al.Materials transactions - JIM. 2000, Vol 41, Num 1, pp 34-36, issn 0916-1821Conference Paper

Estimation of carrier suppression by high-energy boron-implanted layer for soft error reductionKISHIMOTO, T; SAYAMA, H; TAKAI, M et al.Japanese journal of applied physics. 1994, Vol 33, Num 12B, pp 7148-7150, issn 0021-4922, 1Article

Neutron activation analysis of high-purity iron in comparison with chemical analysisKINOMURA, A; TAKAKI, S; NAKANO, Y et al.Materials transactions - JIM. 2000, Vol 41, Num 1, pp 61-66, issn 0916-1821Conference Paper

Temperature Dependence of Defects in Hydrogen-Implanted Silicon Characterized by Positron and Ion-Beam AnalysesKINOMURA, A; SUZUKI, R; OHDAIRA, T et al.Physica. B, Condensed matter. 2012, Vol 407, Num 14S, pp 151-156, issn 0921-4526, 6 p.Conference Paper

Formation of high purity films by negative ion beam sputtering using an ultra-high vacuum self-sputtering methodCHAYAHARA, A; KINOMURA, A; TSUBOUCHI, N et al.Materials transactions - JIM. 2000, Vol 41, Num 1, pp 31-33, issn 0916-1821Conference Paper

Depth profiling of defects in ion-implanted Ni and Fe by positron annihilation measurementsKINOMURA, A; SUZUKI, R; OHDAIRA, T et al.Surface & coatings technology. 2011, Vol 206, Num 5, pp 834-836, issn 0257-8972, 3 p.Conference Paper

Characterization of carbon nitride films produced by simultaneous low energy dual ion beams irradiationTSUBOUCHI, N; HORINO, Y; ENDERS, B et al.Materials chemistry and physics. 1998, Vol 54, Num 1-3, pp 325-329, issn 0254-0584Conference Paper

Titanium implantation profiles in silicon using metal plasma-based ion implantation techniqueKOTO, M; OHNO, K; YOSHIKADO, S et al.Materials chemistry and physics. 1998, Vol 54, Num 1-3, pp 127-130, issn 0254-0584Conference Paper

Titanium ion implantation into silicon substrate by plasma-based metal ion implantation system with 100-kV/2.5-A pulse modulatorYUKIMURA, K; OHNO, K; KOTO, M et al.Surface & coatings technology. 1998, Vol 103-04, pp 252-256, issn 0257-8972Conference Paper

Ion-beam deposition with positive and negative ionsFUJII, K; HORINO, Y; TSUBOUCHI, N et al.Surface & coatings technology. 1996, Vol 84, Num 1-3, pp 544-549, issn 0257-8972Conference Paper

Metal plasma source for PBII using arc-like discharge with hot cathodeCHAYAHARA, A; MOKUNO, Y; KINOMURA, A et al.Surface & coatings technology. 2004, Vol 186, Num 1-2, pp 157-160, issn 0257-8972, 4 p.Conference Paper

Surface segregation phenomena of solute elements in Al-Pb and Al-Fe dilute binary alloysTSUBAKINO, H; NOGAMI, A; YAMAMOTO, Y et al.Applied surface science. 2004, Vol 238, Num 1-4, pp 464-468, issn 0169-4332, 5 p.Conference Paper

Formation of pure thin films by means of self-sputtering depositionHORINO, Y; CHAYAHARA, A; TSUBOUCHI, N et al.Thin solid films. 1999, Vol 343-4, pp 60-62, issn 0040-6090Conference Paper

Nuclear microprobe application to semiconductor process development: silicide formation and multi-layered structureTAKAI, M; KATAYAMA, Y; LOHNER, T et al.Radiation effects and defects in solids. 1994, Vol 127, Num 3-4, pp 357-365, issn 1042-0150Conference Paper

Well structure by high-energy boron implantation for soft-error reduction in dynamic random access memories (DRAMs)KISHIMOTO, T; PARK, Y.-K; TAKAI, M et al.Japanese journal of applied physics. 1995, Vol 34, Num 12B, pp 6899-6902, issn 0021-4922, 1Conference Paper