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EFFECTS OF GAS PRESSURE AND SAMPLE TEMPERATURE DURING SLOW ELECTRON EXCITATION ON EXOELECTRON EMISSIONKIRIHATA H.1979; PHYS. STATUS SOLIDI, A; DDR; DA. 1979; VOL. 52; NO 1; PP. K97-K99; BIBL. 10 REF.Article

FORMATION OF EXOELECTRON EMISSION CENTERS BY SLOW ELECTRON IMPACTKIRIHATA H; AKUTSU J.1979; PHYS. STATUS SOLIDI, A; DDR; DA. 1979; VOL. 51; NO 2; PP. K109-K112; BIBL. 8 REF.Article

SURFACE TEMPERATURE OF A SAMPLE IN THERMALLY STIMULATED EXOELECTRON EMISSION MEASUREMENT.AKUTSU J; KIRIHATA H.1974; SCI. PAPERS INST. PHYS. CHEM. RES.; JAP.; DA. 1974; VOL. 68; NO 1; PP. 1-7Article

EXOELECTRON EMISSION BY SLOW ELECTRON IMPACTS.KIRIHATA H; AKUTSU J.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 35; NO 1; PP. K73-K75; BIBL. 8 REF.Article

EXTERNALLY QUENCHED AIR COUNTER FOR LOW-ENERGY ELECTRON EMISSION MEASUREMENTSKIRIHATA H; UDA M.1981; REV. INSTRUM.; ISSN 0034-6748; USA; DA. 1981; VOL. 52; NO 1; PP. 68-70; BIBL. 9 REF.Article

MESURES DE L'EMISSION EXOELECTRONIQUE PAR IMPACT D'ELECTRONS LENTSKIRIHATA H; TAJIMA N; KITSUNAI T et al.1978; REP. INST. PHYS. CHEM. RES.; JPN; DA. 1978; VOL. 54; NO 6; PP. 149-164; ABS. ENG; BIBL. 29 REF.Article

Annealing behavior of ion-implanted gallium atoms in silicon by use of capping filmWATANABE, M; ISHIWATA, O; NAGANO, M et al.Journal of the Electrochemical Society. 1992, Vol 139, Num 6, pp 1748-1751, issn 0013-4651Article

Annealing behavior of ion-implanted aluminum atoms in silicon by use of capping filmWATANABE, M; ISHIWATA, O; NAGANO, M et al.Journal of the Electrochemical Society. 1991, Vol 138, Num 11, pp 3427-3431, issn 0013-4651Article

Turn-on and turn-off characteristics of a 4.5-kV 3000-A gate turn-off thyristorHASHIMOTO, O; KIRIHATA, H; WATANABE, M et al.IEEE transactions on industry applications. 1986, Vol 22, Num 3, pp 478-482, issn 0093-9994Conference Paper

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