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COMPLETELY INTEGRABLE N-BODY QUANTUM SYSTEMS IN THREE DIMENSIONSBARUT AO; KITAGAWARA Y.1981; J. PHYS. A; ISSN 0305-4470; GBR; DA. 1981; VOL. 14; NO 10; PP. 2581-2594; BIBL. 26 REF.Article

COMPLETELY INTEGRABLE N-BODY QUANTUM SYSTEMS IN THREE DIMENSIONS. II: N IDENTICAL SPIN-1,2 FERMIONSBARUT AO; KITAGAWARA Y.1982; J. PHYS. A; ISSN 0305-4470; GBR; DA. 1982; VOL. 15; NO 1; PP. 117-133; BIBL. 13 REF.Article

Homogenization of EL2 defect concentration of dislocation-free liquid-encapsulated-Czochralski GaAs:In in its growth directionKITAGAWARA, Y; TAKENAKA, T.Journal of applied physics. 1992, Vol 71, Num 6, pp 2890-2897, issn 0021-8979Article

On the dynamical symmetry of the periodic table. II: Modified Demkov-Ostrovsky atomic modelKITAGAWARA, Y; BARUT, A. O.Journal of physics. B. Atomic and molecular physics. 1984, Vol 17, Num 21, pp 4251-4259, issn 0022-3700Article

Period doubling in the n+l filling rule and dynamical symmetry of the Demkov-Ostrovsky atomic modelKITAGAWARA, Y; BARUT, A. O.Journal of physics. B. Atomic and molecular physics. 1983, Vol 16, Num 18, pp 3305-3327, issn 0022-3700Article

Evaluation of oxygen-related carrier recombination centers in high-purity Czochralski-grown Si crystals by the bulk lifetime measurementsKITAGAWARA, Y; YOSHIDA, T; HAMAGUCHI, T et al.Journal of the Electrochemical Society. 1995, Vol 142, Num 10, pp 3505-3509, issn 0013-4651Article

Transmission electron microscope observation of IR scattering defects in As-grown Czochralski Si crystalsKATO, M; YOSHIDA, T; IKEDA, Y et al.Japanese journal of applied physics. 1996, Vol 35, Num 11, pp 5597-5601, issn 0021-4922, 1Article

Deep levels in semiconducting In-alloyed bulk n-GaAs and its resistivity conversions by thermal treatmentsKITAGAWARA, Y; NOTO, N; TAKAHASHI, T et al.Applied physics letters. 1988, Vol 52, Num 3, pp 221-223, issn 0003-6951Article

Study of applicability of AC photovoltaic method and photoconductive decay method using microwaves as noncontact methods for bulk lifetime measurementTODA, M; KITAGAWARA, Y; TAKENAKA, T et al.Japanese journal of applied physics. 1993, Vol 32, Num 7, pp 3330-3331, issn 0021-4922, 1Article

Electron traps in dislocation-free In-alloyed liquid encapsulated Czochralski GaAs and their annealing propertiesKITAGAWARA, Y; NOTO, N; TAKAHASHI, T et al.Applied physics letters. 1986, Vol 48, Num 24, pp 1664-1665, issn 0003-6951Article

Practical computer simulation technique to predict oxygen precipitation behavior in Czochralski silicon wafers for various thermal processesTAKENO, H; OTOGAWA, T; KITAGAWARA, Y et al.Journal of the Electrochemical Society. 1997, Vol 144, Num 12, pp 4340-4345, issn 0013-4651Article

Accurate evaluation techniques of interstitial oxygen concentrations in medium-resistivity Si crystalsKITAGAWARA, Y; TAMATSUKA, M; TAKENAKA, T et al.Journal of the Electrochemical Society. 1994, Vol 141, Num 5, pp 1362-1364, issn 0013-4651Article

Evaluation of oxygen precipitated silicon crystals by deep-level photoluminescence at room temperature and its mappingKITAGAWARA, Y; HOSHI, R; TAKENAKA, T et al.Journal of the Electrochemical Society. 1992, Vol 139, Num 8, pp 2277-2281, issn 0013-4651Conference Paper

Infrared spectrophotometry of carbon-induced localized vibrational mode in indium-doped liquid-encapsulated czochralski GaAsKITAGAWARA, Y; ITOH, T; NOTO, N et al.Applied physics letters. 1986, Vol 48, Num 12, pp 788-790, issn 0003-6951Article

Dependence of epitaxial layer defect morphology on substrate particle contamination of Si epitaxial waferIWABUCHI, M; MIZUSHIMA, K; MIZUNO, M et al.Journal of the Electrochemical Society. 2000, Vol 147, Num 3, pp 1199-1203, issn 0013-4651Article

High-sensitivity defect evaluation by a new preferential etching technique for highly As-doped Si crystalsMAJIMA, M; OTOGAWA, T; KITAGAWARA, Y et al.Japanese journal of applied physics. 1997, Vol 36, Num 10, pp 6195-6199, issn 0021-4922, 1Article

Photoluminescence studies on semi-insulating in-doped dislocation-free GaAs grown by LEC methodNOTO, N; KITAGAWARA, Y; TAKAHASHI, T et al.Japanese journal of applied physics. 1986, Vol 25, Num 5, pp L394-L396, issn 0021-4922, part 2Article

Observation of microdefects in indium-doped GaAs crystals by preferential etching and infrared light scattering tomographyKUWABARA, S; KITAGAWARA, Y; NOTO, N et al.Journal of crystal growth. 1989, Vol 96, Num 3, pp 572-576, issn 0022-0248Article

Direct observation of electrically harmful surface defects of Si wafer immersed in slightly Cu-contaminated waterKOBAYASHI, T; UCHIYAMA, I; KIMURA, A et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 112-115, issn 0022-0248Conference Paper

Improvements in ultra-thin gate oxide thickness metrology using rapid optical surface treatmentNEWCOMB, R; KAMIENIECKI, E; DANEL, A et al.SPIE proceedings series. 1999, pp 441-449, isbn 0-8194-3497-3Conference Paper

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