SIMPLE METHOD FOR SEPARATING COMPLETED DIODES FROM SEMICONDUCTOR WAFERS.KLATSKIN J; ROSEN A.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 11; PP. 1565-1566Article

POWER COMBINATION OF BROADBAND TRAPATT AMPLIFIERS.HO PT; ROSEN A; KLATSKIN J et al.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 1; PP. 16-17; BIBL. 12 REF.Article

1.5 w 11-17 GHz GaAs MESFET power amplifier utilising lumped-element matching techniquesKLATSKIN, J. B.Electronics Letters. 1984, Vol 20, Num 13, pp 564-565, issn 0013-5194Article

X-Band MMIC amplifier on GaAs/SiERON, M; TAYLOR, G; RAY MENNA et al.IEEE electron device letters. 1987, Vol 8, Num 8, pp 350-352, issn 0741-3106Article

High-efficiency GaAs microwave power mesFETs with an n⁺n^-n doping formed by buried-shallow-implant (BSI)LIU, S. G; TAYLOR, G. C; KLATSKIN, J et al.Electronics Letters. 1990, Vol 26, Num 17, pp 1373-1374, issn 0013-5194Article