Red blood cell adenosine deaminase activity in multiple sclerosisKOPFF, M; ZAKRZEWSKA, I; CZERNICKI, J et al.Clinica chimica acta. 1993, Vol 214, Num 1, pp 97-101, issn 0009-8981Article

Direct measurement of heavy-hole excition transport in type-II GaAs/AlAs superlatticesGILLILAND, G. D; ANTONELLI, A; WOLFORD, D. J et al.Physical review letters. 1993, Vol 71, Num 22, pp 3717-3720, issn 0031-9007Article

Electronic Ramascattering from carbon acceptors in undoped GaAs-Al_1-xGa_xAs multiple quantum wellsTSEN, K. T; KLEM, J; MORKOP, H et al.Solid state communications. 1986, Vol 59, Num 8, pp 537-540, issn 0038-1098Article

Microwave properties of self-aligned GaAs/AlGaAs heterojunction bipolar transistors on silicon substratesFISCHER, R; KLEM, J; PENG, C. K et al.IEEE electron device letters. 1986, Vol 7, Num 2, pp 112-114, issn 0741-3106Article

Si incorporation probabilities and depth distributions in Ga_1-xAl_xAs films grown by molecular-beam epitaxyROCKETT, A; KLEM, J; BARNETT, S. A et al.Journal of applied physics. 1986, Vol 59, Num 8, pp 2777-2783, issn 0021-8979Article

Electron heating in a multiple-quantum-well structure below 1 KWENNBERG, A. K. M; YTTERBOE, S. N; GOULD, C. M et al.Physical review. B, Condensed matter. 1986, Vol 34, Num 6, pp 4409-4411, issn 0163-1829Article

Excitonic photoluminescence linewidths in AlGaAs grown by molecular beam epitaxyREYNOLDS, D. C; BAJAJ, K. K; LITTON, C. W et al.Applied physics letters. 1986, Vol 48, Num 11, pp 727-729, issn 0003-6951Article

Properties of Al_xGa_1-xAs/GaAs multiple quantum well laser structures grown by molecular beam epitaxyFISCHER, R; KLEM, J; MORKOC, H et al.Optical engineering (Bellingham. Print). 1984, Vol 23, Num 3, pp 323-325, issn 0091-3286Article

Ga/AsAlGaAs MODFET's grown on (100) GeFISCHER, R; KLEM, J; HENDERSON, T et al.IEEE electron device letters. 1984, Vol 5, Num 11, pp 456-457, issn 0741-3106Article

Comprehensive analysis of Si-doped Al_xGa_1-xAs (x=0 to 1): theory and experimentsCHAND, N; HENDERSON, T; KLEM, J et al.Physical review. B, Condensed matter. 1984, Vol 30, Num 8, pp 4481-4492, issn 0163-1829Article

The structural dependence of light sensitivity in (Al, Ga)As/GaAs modulation doped heterostructuresKLEM, J; DRUMMOND, T. J; FISCHER, R et al.Journal of electronic materials. 1984, Vol 13, Num 5, pp 741-748, issn 0361-5235Article

Transport studies of GaAs_1-xSb_x-Al_yGa_1-yAs strained-layer superlatticesWEI, H. P; CHOU, M. J; TSUI, D. C et al.Applied physics letters. 1984, Vol 45, Num 12, pp 1292-1294, issn 0003-6951Article

Integrated optical/optoelectronic switch for parallel optical interconnectsLU, Y.-C; CHENG, J; ZOLPER, J. C et al.Electronics Letters. 1995, Vol 31, Num 7, pp 579-581, issn 0013-5194Article

Raman scattering from confined LO phonons and dispersion relation in GaAs/AlAs superlatticesSHU-LIN ZHANG; KLEIN, M. V; KLEM, J et al.Physics letters. A. 1988, Vol 131, Num 1, pp 69-72, issn 0375-9601Article

Picosecond imaging of photoexcited carriers in quantum wells: anomalous lateral confinement at high densitiesSMITH, L. M; WAKE, D. R; WOLFE, J. P et al.Physical review. B, Condensed matter. 1988, Vol 38, Num 8, pp 5788-5791, issn 0163-1829Article

Determination of transition energies and oscillator strengths in GaAs-Al_xGa_1-xAs multiple quantum wells using photovoltage-induced photocurrent spectroscopyYU, P. W; SANDERS, G. D; REYNOLDS, D. C et al.Physical review. B, Condensed matter. 1987, Vol 35, Num 17, pp 9250-9258, issn 0163-1829Article

Diffusion of As and Ge during growth of GaAs on Ge substrate by molecular-beam epitaxy: its effects on the device electrical characteristicsCHAND, N; KLEM, J; HENDERSON, T et al.Journal of applied physics. 1986, Vol 59, Num 10, pp 3601-3604, issn 0021-8979Article

High-resolution photoluminescence and reflection studies of GaAs-Al_xGa_1-xAs multi-quantum-well structures grown by molecular-beam epitaxy: determination of microscopic structural quality of interfacesREYNOLDS, D. C; BAJAJ, K. K; LITTON, C. W et al.Physical review. B, Condensed matter. 1986, Vol 33, Num 8, pp 5931-5934, issn 0163-1829Article

Characterization of extremely low contact resistances on modulation-doped FET'sKETTERSON, A. A; PONSE, F; HENDERSON, T et al.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 11, pp 2257-2261, issn 0018-9383Article

Extremely low contact resistances for AlGaAs/GaAs modulation-doped field-effect transistor structuresKETTERSON, A; PONSE, F; HENDERSON, T et al.Journal of applied physics. 1985, Vol 57, Num 6, pp 2305-2307, issn 0021-8979Article

High transconductance InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistorsKETTERSON, A; MOLONEY, M; MASSELINK, W. T et al.IEEE electron device letters. 1985, Vol 6, Num 12, pp 628-630, issn 0741-3106Article

Improved Al_xGa_1-xAs bulk lasers with superlattice interfacesFISCHER, R; KLEM, J; DRUMMOND, T. J et al.Applied physics letters. 1984, Vol 44, Num 1, pp 1-3, issn 0003-6951Article

Characteristics of GaAs/AlGaAs MODFETs grown directly on (100) siliconFISCHER, R; HENDERSON, T; KLEM, J et al.Electronics Letters. 1984, Vol 20, Num 22, pp 945-947, issn 0013-5194Article

Optical properties of GaAs on (100) Si using molecular beam epitaxyMASSELINK, W. T; HENDERSEN, T; KLEM, J et al.Applied physics letters. 1984, Vol 45, Num 12, pp 1309-1311, issn 0003-6951Article

Persistent photoconductivity in (Al,Ga)As/GaAs modulation doped structures: dependence on structure and growth temperatureKLEM, J; MASSELINK, W. T; ARNOLD, D et al.Journal of applied physics. 1983, Vol 54, Num 9, pp 5214-5217, issn 0021-8979Article