25 JAHRE TRANSISTOR = LE TRANSISTOR A 25 ANSKLOSE H.1973; NACHR. TECH. ELEKTRON.; DTSCH.; DA. 1973; VOL. 23; NO 7; PP. 242; BIBL. 6 REF.Serial Issue

WAERMEBEHANDLUNG VON WERKZEUGSTAEHLEN. T. 1:WEICHGLUEHEN, SPANNUNGSARMGLUEHEN UND HAERTEN = HEAT TREATMENT OF TOOL STEELS. PT. 1KLOSE H.1983; BLECH, ROHRE, PROFILE; ISSN 0006-4688; DEU; DA. 1983-04; VOL. 30; NO 4; PP. 141-143Article

INFLUENCE OF AL POSTIMPLANTATION ON P-N JUNCTIONS IN GALLIUM PHOSPHIDEKLOSE H; RIETH M.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 66; NO 2; PP. K153-K156; BIBL. 1 REF.Article

Waermebehandlung von Werkzeugstaehlen. T. 2:Haerten und Anlassen, Nitrieren und Formaendern beim Haerten = Heat treatment of tool steels. Pt. 2KLOSE, H.Draht. 1983, Vol 34, Num 7, pp 367-369, issn 0012-5911Article

Verfügbarkeit automatischer, fahrerloser Flurförderzeugsysteme = Disponibilité de systèmes de véhicules de manutention au sol automatique sans pilote = Availability of driverless automated industrial truck systemsKLOSE, H.-J.VDI-Berichte. 1987, Num 636, pp 51-78, issn 0083-5560Conference Paper

DIE CAVATHROMBOSE ALS KOMPLIKATION DES CAVA-LANGZEITKATHETERS = LA THROMBOSE CAVE, COMPLICATION DU CATHETER CAVE LAISSE EN PLACE LONGTEMPSDIETZ HG; MANTEL K; KLOSE H et al.1983; MONATSSCHRIFT FUER KINDERHEILKUNDE; ISSN 0026-9298; DEU; DA. 1983; VOL. 131; NO 4; PP. 238-240; ABS. ENG; BIBL. 18 REF.Article

DIE MOEGLICHKEIT DER NUTZUNG DER 12-GHZ-BEREICHS FUER TERRESTRISCHE FUNKDIENSTE. = LA POSSIBILITE DE L'UTILISATION DU DOMAINE DES 12 GHZ POUR DES SERVICES DE RADIOCOMMUNICATIONS TERRESTRESKABE J; KLOSE H; KUHN U et al.1976; RADIO FERNSEHEN ELEKTRON.; DTSCH.; DA. 1976; VOL. 25; NO 7; PP. 233-238 (5P.); BIBL. 14 REF.Article

RHABDOMYOSARKOM IM KINDESALTER. DIAGNOSTIK UND NEUE THERAPIEMOEGLICHKEITEN = RHABDOMYOSARCOME CHEZ L'ENFANT. DIAGNOSTIC ET NOUVELLES POSSIBILITES DE TRAITEMENTHAAS RJ; DEVENS K; HELMIG M et al.1978; ONKOLOGIE; DEU; DA. 1978; VOL. 1; NO 4; PP. 142-148; ABS. ENG; BIBL. 33 REF.Article

Numerical conformal mapping of a towel-shaped region onto a rectangleSEIDL, A; KLOSE, H.SIAM journal on scientific and statistical computing. 1985, Vol 6, Num 4, pp 833-842, issn 0196-5204Article

Annealing of degraded npn-transistors : mechanisms and modelingWURZER, H; MAHNKOPF, R; KLOSE, H et al.I.E.E.E. transactions on electron devices. 1994, Vol 41, Num 4, pp 533-538, issn 0018-9383Article

Spanende Bearbeitung der Randzone von Bauteilen aus Gusseisen mit Kugelgraphit = Machining of the surface zones of SG-iron castingsTÖNSHOFF, H. K; KLOSE, H.-J.Giesserei. 1993, Vol 80, Num 11, pp 355-362, issn 0016-9765Article

Versatile divider circuits up to 9GHz input-frequency realised in high-speed BICMOSWEGER, P; FELDER, A; KERBER, M et al.Electronics Letters. 1990, Vol 26, Num 23, pp 1942-1944, issn 0013-5194Article

Big channeling effects at low-energy ion implantation in siliconBOLLMANN, J; KLOSE, H; MERTENS, A et al.Physica status solidi. A. Applied research. 1986, Vol 97, Num 2, pp K135-K139, issn 0031-8965Article

Ion beam contacting of silicon. II: Antimony in n-siliconMERTENS, A; KLOSE, H; TANG, N et al.Physica status solidi. A. Applied research. 1985, Vol 88, Num 1, pp 369-374, issn 0031-8965Article

Formation of Schottky junctions in silicon by ion implantationBOLLMAN, J; KLOSE, H; MERTENS, A et al.Physica status solidi. A. Applied research. 1986, Vol 97, Num 1, pp K95-K99, issn 0031-8965Article

Spanwurzeluntersuchungen an GusseisenwerkstoffenTÖNSHOFF, H. K; BRINKSMEIER, E; KLOSE, H.-J et al.VDI-Z. 1991, Vol 133, Num 3, pp 85-91, issn 0042-1766Article

BICMOS, a technology for high-speed/high-density ICsZEHNER, B; KLOSE, H; FEIGE, D et al.Siemens Forschungs- und Entwicklungsberichte. 1988, Vol 17, Num 6, pp 278-283, issn 0370-9736Article

On the determination of deep level concentration profiles by DLTS measurementsMAASS, K; IRMSCHER, K; KLOSE, H et al.Physica status solidi. A. Applied research. 1985, Vol 91, Num 2, pp 667-675, issn 0031-8965Article

Hydrogen-related deep levels in proton-bombarded siliconIRMSCHER, K; KLOSE, H; MAASS, K et al.Journal of physics. C. Solid state physics. 1984, Vol 17, Num 35, pp 6317-6329, issn 0022-3719Article

Amorphous silicon-phosphorus layers = Amorphe Silizium-Phosphor-SchichtenDVURECHENSKII, A.V; RYAZANTSEV, I.A; SMIRNOV, L.S et al.Physica status solidi. A. Applied research. 1983, Vol 79, Num 1, pp 83-86, issn 0031-8965Article

10 Gbit/s monolithic integrated bipolar demultiplexer for optical-fibree transmission systems fabricated in BICMOS technologyHAUENSCHILD, J; REIN, H.-M; WEGER, P et al.Electronics Letters. 1989, Vol 25, Num 12, pp 782-783, issn 0013-5194Article

Geometric mismatch between homograft (allograft) and native aortic root: a 14-year clinical experienceYANKAH, A. C; KLOSE, H; MUSCI, M et al.European journal of cardio-thoracic surgery. 2001, Vol 20, Num 4, pp 835-841, issn 1010-7940Conference Paper

The influence of alkali atoms implanted in silicon on the negative secondary ion emission = Der Einfluss der in Silizium implantierten Alkaliatome auf die Emission negativer SekundaerelektronenFRENTRUP, W; GRIEPENTROG, M; KLOSE, H et al.Physica status solidi. A. Applied research. 1984, Vol 84, Num 1, pp 269-272, issn 0031-8965Article

Amorphous silicon-phosphorus layersDVURECHENSKII, A. V; RYAZANTSEV, I. A; SMIRNOV, L. S et al.Physica status solidi. A. Applied research. 1983, Vol 79, Num 1, pp 83-86, issn 0031-8965Article

Spontaneous bacterial peritonitis due to Listeria monocytogenes in a patient with primary pulmonary hypertensionROHDE, H; HORSTKOTTE, M. A; SOBOTTKA, I et al.European journal of clinical microbiology & infectious diseases (Print). 2002, Vol 21, Num 4, pp 323-325, issn 0934-9723Article