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UNTERSUCHUNGEN ZUR BILDUNG VON EINWOHNERGLEICHWERTEN FESTER ABFALLSTOFFE = ETUDE DE L'ETABLISSEMENT D'EQUIVALENTS-HABITANT POUR LES DECHETS SOLIDESKNOCH J.1976; VEROEFF. INST. STADTBAUWES.; DTSCH.; DA. 1976; NO 19; PP. 71-87; BIBL. 2 REF.Article

MESSUNGEN UND UEBERLEGUNGEN ZUM WASSERHAUS HALT VON ABFALLDEPONIEN. = MESURE ET REFLEXIONS SUR LE REGIME DES EAUX DES DECHARGES CONTROLEESKNOCH J.1977; WASS. U. BODEN; DTSCH.; DA. 1977; VOL. 29; NO 11; PP. 315-317; BIBL. 9 REF.Article

Collection and transport of solid waste in the Federal Republic of Germany = La collecte et le transport des déchets solides dans la République Fédérale d'AllemagneKNOCH, J.1986, Vol 4, Num 2, pp 137-145Article

Anforderungen und Vorstellungen für Planung und Betrieb einer Sonderabfalldeponie = Exigences et idées pour la planification et l'exploitation d'une décharge de déchets spéciauxKNOCH, J.Fachseminar 6.-7. Februar 1985 in Braunschweig. 1985, Num 17, pp 225-232Conference Paper

SICKERWASSERQUALITAET VON ROTTEDEPONIEN = QUALITE DES EAUX D'INFILTRATION DE DECHARGES AVEC FERMENTATIONSTEGMANN R; KNOCH J.1975; MUELL U. ABFALL; DTSCH.; DA. 1975; NO 2; PP. 36-43; BIBL. 11 REF.; 14 ILL.Article

Collection and transport of solid waste in the Federal Republic of GermanyKNOCH, J.Waste management & research. 1986, Vol 4, Num 2, pp 137-145Article

Outperforming the Conventional Scaling Rules in the Quantum-Capacitance LimitKNOCH, J; RIESS, W; APPENZELLER, J et al.IEEE electron device letters. 2008, Vol 29, Num 4, pp 372-374, issn 0741-3106, 3 p.Article

Improved carrier injection in ultrathin-body SOI schottky-barrier MOSFETsZHANG, M; KNOCH, J; APPENZELLER, Joerg et al.IEEE electron device letters. 2007, Vol 28, Num 3, pp 223-225, issn 0741-3106, 3 p.Article

Quantum kinetic description of Coulomb effects in one-dimensional nanoscale transistorsINDLEKOFER, K. M; KNOCH, J; APPENZELLER, J et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 12, pp 125308.1-125308.31, issn 1098-0121Article

Multimode transport in schottky-barrier carbon-nanotube field-effect transistorsANNENZELLER, J; KNOCH, J; RADOSAVLJEVIC, M et al.Physical review letters. 2004, Vol 92, Num 22, pp 226802.1-226802.4, issn 0031-9007Article

Comparison of transport properties in carbon nanotube field-effect transistors with Schottky contacts and doped source/drain contactsKNOCH, J; MANTL, S; APPENZELLER, J et al.Solid-state electronics. 2005, Vol 49, Num 1, pp 73-76, issn 0038-1101, 4 p.Article

Band-to-band tunneling in carbon nanotube field-effect transistorsAPPENZELLER, J; LIN, Y.-M; KNOCH, J et al.Physical review letters. 2004, Vol 93, Num 19, pp 196805.1-196805.4, issn 0031-9007Article

Dopant segregation in SOI Schottky-barrier MOSFETsKNOCH, J; ZHANG, M; FESTE, S et al.Microelectronic engineering. 2007, Vol 84, Num 11, pp 2563-2571, issn 0167-9317, 9 p.Conference Paper

Low temperature measurements of Schottky-barrier SOI-MOSFETs with dopant segregationZHANG, M; KNOCH, J; ZHAO, Q. T et al.Electronics Letters. 2005, Vol 41, Num 19, pp 1085-1086, issn 0013-5194, 2 p.Article

Short-channel like effects in Schottky barrier carbon nanotube field-effect transistorsAPPENZELLER, J; KNOCH, J; MARTEL, R et al.IEDm : international electron devices meeting. 2002, pp 285-288, isbn 0-7803-7462-2, 4 p.Conference Paper

Impact of electrostatics and doping concentration on the performance of silicon tunnel field-effect transistorsSANDOW, C; KNOCH, J; URBAN, C et al.Solid-state electronics. 2009, Vol 53, Num 10, pp 1126-1129, issn 0038-1101, 4 p.Article

Physics of ultrathin-body silicon-on-insulator Schottky-barrier field-effect transistorsKNOCH, J; ZHANG, M; APPENZELLER, J et al.Applied physics. A, Materials science & processing (Print). 2007, Vol 87, Num 3, pp 351-357, issn 0947-8396, 7 p.Article

An extended model for carbon nanotube field-effect transistorsKNOCH, J; MANTL, S; LIN, Y.-M et al.DRC : Device research conference. 2004, pp 135-136, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

Systematic study of Schottky barrier MOSFETs with dopant segregation on thin-body SOIURBAN, C; SANDOW, C; ZHAO, Q.-T et al.Solid-state electronics. 2010, Vol 54, Num 2, pp 185-190, issn 0038-1101, 6 p.Article

Impact of variability on the performance of SOI Schottky barrier MOSFETsFESTE, S. F; ZHANG, M; KNOCH, J et al.Solid-state electronics. 2009, Vol 53, Num 4, pp 418-423, issn 0038-1101, 6 p.Article

Silicon nanowire FETs with uniaxial tensile strainFESTE, S. F; KNOCH, J; HABICHT, S et al.Solid-state electronics. 2009, Vol 53, Num 12, pp 1257-1262, issn 0038-1101, 6 p.Article

Fabrication of uniaxially strained silicon nanowiresFESTE, S. F; KNOCH, J; BUCA, D et al.Thin solid films. 2008, Vol 517, Num 1, pp 320-322, issn 0040-6090, 3 p.Conference Paper

Impact of dopant segregation on fully depleted Schottky-barrier SOI-MOSFETsZHANG, M; KNOCH, J; ZHAO, Q. T et al.Solid-state electronics. 2006, Vol 50, Num 4, pp 594-600, issn 0038-1101, 7 p.Conference Paper

Buried triple-gate structures for advanced field-effect transistor devicesMULLER, M. R; GUMPRICH, A; SCHÜTTE, F et al.Microelectronic engineering. 2014, Vol 119, pp 95-99, issn 0167-9317, 5 p.Article

Experimental determination of the Andreev reflection probability using ballistic point contact spectroscopyJAKOB, M; APPENZELLER, J; KNOCH, J et al.Materials science & engineering C. Biomimetic and supramolecular systems. 2001, Vol 15, Num 1-2, pp 63-65Conference Paper

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