Hydrogen effect on nanostructural features of nanocrystalline silicon thin films deposited at 200°C by PECVDATIF MOSSAD ALI; KOBAYASHI, Hikaru.Journal of non-crystalline solids. 2014, Vol 385, pp 17-23, issn 0022-3093, 7 p.Article

Electrical properties of the silicon oxide/Si structure formed with perchloric acid at 203°CSAKURAI, Takeaki; NISHIYAMA, Masayoshi; NISHIOKA, Yasushiro et al.Solid state communications. 2001, Vol 118, Num 8, pp 391-394, issn 0038-1098Article

Fabrication of Si nanoparticles from Si swarf and application to solar cellsMAEDA, Masanori; IMAMURA, Kentaro; MATSUMOTO, Taketoshi et al.Applied surface science. 2014, Vol 312, pp 39-42, issn 0169-4332, 4 p.Conference Paper

Band alignment of SiO₂/Si structure formed with nitric acid vapor below 500 °CIMAMURA, Kentarou; TAKAHASHI, Masao; IMAI, Shigeki et al.Surface science. 2009, Vol 603, Num 7, pp 968-972, issn 0039-6028, 5 p.Article

Experimental and theoretical studies on N 1s levels of silicon oxynitride filmsTAKAHASHI, Masao; MIZOKURO, Toshiko; NISHIOKA, Yasushiro et al.Surface science. 2002, Vol 518, Num 1-2, pp 72-80, issn 0039-6028, 9 p.Article

Syntheses and luminescent properties of (La_1-xLn_x)₂O₂CN₂(Ln = Pr, Sm, Eu, Tb)TAKAHASHI, Masao; HASHIMOTO, Yasuhiro; KIKKAWA, Shinichi et al.Zairyo. 2000, Vol 49, Num 11, pp 1230-1234, issn 0514-5163Article

Multifractal analysis of textured silicon surfacesJURECKA, Stanislav; ANGERMANN, Heike; KOBAYASHI, Hikaru et al.Applied surface science. 2014, Vol 301, pp 46-50, issn 0169-4332, 5 p.Conference Paper

Experimental and theoretical studies of Si-CN bonds to eliminate interface states at Si/SiO₂ interfaceMAIDA, Osamu; ASANO, Akira; TAKAHASHI, Masao et al.Surface science. 2003, Vol 542, Num 3, pp 244-252, issn 0039-6028, 9 p.Article

Postoxidation annealing treatments to improve Si/ultrathin SiO₂ characteristics formed by nitric acid oxidationASUHA; LIU, Yueh-Ling; MAIDA, Osamu et al.Journal of the Electrochemical Society. 2004, Vol 151, Num 12, pp G824-G828, issn 0013-4651Article

About electrical properties of passivated SiO₂/Si structures prepared electro-chemically in HClO₄ solutionsPINCIK, Emil; KOBAYASHI, Hikaru; RUSNAK, Jaroslav et al.Applied surface science. 2013, Vol 269, pp 148-154, issn 0169-4332, 7 p.Article

1.5-V-Operation Ultralow Power Circuit of Poly-Si TFTs Fabricated Using the NAOS MethodKUBOTA, Yasushi; MATSUMOTO, Taketoshi; TSUJI, Hiroshi et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 2, pp 385-392, issn 0018-9383, 8 p.Article

Proceedings of the Session on Surface Science of the 4th Vacuum and Surface Sciences Conference of Asia and AustraliaOURA, Kenjiro; ARAKAWA, Ichiro; FUKUTANI, Katsuyuki et al.Applied surface science. 2009, Vol 256, Num 4, issn 0169-4332, 345 p.Conference Proceedings

Adsorption, reaction and desorption of hydrogen on modified Pd(1 1 1) surfacesWINKLER, Adolf.Applied surface science. 2009, Vol 256, Num 4, pp 1114-1119, issn 0169-4332, 6 p.Conference Paper

Design of a mirror aberration corrector and a beam separator for LEEMTSUNO, K; YASUE, T; KOSHIKAWA, T et al.Applied surface science. 2009, Vol 256, Num 4, pp 1035-1041, issn 0169-4332, 7 p.Conference Paper

Electronic excitation processes in rare gas clusters studied by electron energy loss spectroscopyKUBOTERA, Hayato; SAKAI, Satoshi; SEKITSUKA, Tatsuya et al.Applied surface science. 2009, Vol 256, Num 4, pp 1046-1049, issn 0169-4332, 4 p.Conference Paper

Fabrication and scanning tunneling microscopy studies of the Si(1 1 1)-(√31 x √31)-In surfaceZHENG WEI; LIM, Heechul; LEE, Geunseop et al.Applied surface science. 2009, Vol 256, Num 4, pp 1152-1155, issn 0169-4332, 4 p.Conference Paper

Inelastic mean free path, surface excitation parameter, and differential surface excitation parameter in Au for 300-3000 eV electronsNAGATOMI, T; GOTO, K.Applied surface science. 2009, Vol 256, Num 4, pp 1200-1204, issn 0169-4332, 5 p.Conference Paper

Influence of nanometer scale film structure of ZDDP tribofilm on Its mechanical properties: A computational chemistry studyONODERA, Tasuku; KURIAKI, Takanori; KUBO, Momoji et al.Applied surface science. 2009, Vol 256, Num 4, pp 976-979, issn 0169-4332, 4 p.Conference Paper

Photocatalytic property of TiO₂ thin films sputtered-deposited on unheated substratesPIHOSH, Y; GOTO, M; KASAHARA, A et al.Applied surface science. 2009, Vol 256, Num 4, pp 937-942, issn 0169-4332, 6 p.Conference Paper

Preparation of WO₃ nanoparticles and application to NO₂ sensorDAN MENG; YAMAZAKI, Toshinari; YANBAI SHEN et al.Applied surface science. 2009, Vol 256, Num 4, pp 1050-1053, issn 0169-4332, 4 p.Conference Paper

Theoretical investigation on the structural stability of GaP nanowires with {1 1 1} facetsYAMASHITA, Tomoki; AKIYAMA, Toru; NAKAMURA, Kohji et al.Applied surface science. 2009, Vol 256, Num 4, pp 1054-1057, issn 0169-4332, 4 p.Conference Paper

Zn_1-xMg_xO/ZnO heterostructures studied by Kelvin probe force microscopy conjunction with probe characterizerCHIU, Te-Wei; ITOH, Hiroshi; TAMPO, Hitoshi et al.Applied surface science. 2009, Vol 256, Num 4, pp 1180-1183, issn 0169-4332, 4 p.Conference Paper

Complete prevention of reaction at HfO₂/Si interfaces by 1 nm silicon nitride layerKOBAYASHI, Hikaru; IMAMURA, Kentaro; FUKAYAMA, Ken-Ichi et al.Surface science. 2008, Vol 602, Num 11, pp 1948-1953, issn 0039-6028, 6 p.Article

Nitric acid method for fabrication of gate oxides in TFTMIZUSHIMA, Shigeaki; IMAI, Shigeki; ASUHA et al.Applied surface science. 2008, Vol 254, Num 12, pp 3685-3689, issn 0169-4332, 5 p.Conference Paper

Submicrometer Ultralow-Power TFT With 1.8 nm NAOS SiO₂/20 nm CVD SiO₂ Gate Stack StructureKUBOTA, Yasushi; MATSUMOTO, Taketoshi; IMAI, Shigeki et al.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 4, pp 1134-1140, issn 0018-9383, 7 p.Article