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ETUDE COMPAREE DES OS PHARYNGIENS ET DE LEURS DENTS DANS LA SOUS-FAMILLE DES CYPRININAE: PROCYPRIS, MESOCYPRINUS ET DENTS PHARYNGIENNES. FOSSILES PROVENANT DU GROUPE MIZUNAMIKODERA H.1976; BULL. MIZUNAMI FOSSIL MUS.; JAP.; DA. 1976; NO 3; PP. 163-170; H.T. 1; ABS. ANGL.; BIBL. 11 REF.; 4 ILL.Article

La preuve paléontologique de l'apparition d'une espèce, Gengoro-buna (Carassius cuvieri TEMMINCK et SCHLEGEL); étude comparative des tissus dentaires d'espèces vivantes et fossilesKODERA, H.1985, Vol 39, Num 4, pp 272-281, issn 0366-6611Article

A THEORY FOR INTERVALLEY TRANSFER EFFECT IN TWO-VALLEY SEMICONDUCTORS.TOYABE T; KODERA H.1974; JAP. J. APPL. PHYS.; JAP.; DA. 1974; VOL. 13; NO 9; PP. 1404-1413; BIBL. 18 REF.Article

PREMIERE DECOUVERTE D'UNE CARPE FOSSILE DANS LE GROUPE KOBIWAKO, PREFECTURE DE SHIGA, JAPONKODERA H; NAKAMURA T.1975; J. GEOL. SOC. JAP.; JAP.; 1975, VOL. 81, NUM. 0010, P. 591 A 594Serial Issue

OPTIMUM DESIGN OF TRIODE-LIKE JFET'S BY TWO-DIMENSIONAL COMPUTER SIMULATION.YAMAGUCHI K; KODERA H.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 3; PP. 1061-1069; BIBL. 16 REF.Article

DRAIN CONDUCTANCE OF JUNCTION GATE FET'S IN THE HOT ELECTRON RANGE.YAMAGUCHI K; KODERA H.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 6; PP. 545-553; BIBL. 13 REF.Article

TWO-DIMENSIONAL NUMERICAL ANALYSIS OF STABILITY CRITERIA OF GAAS FET'S.YAMAGUCHI K; ASAI S; KODERA H et al.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 12; PP. 1283-1290; BIBL. 27 REF.Article

INTENTIONAL SIDE ETCHING TO ACHIEVE LOW-NOISE GAAS F.E.T.MURAI F; KURONO H; KODERA H et al.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 11; PP. 316-318; BIBL. 3 REF.Article

TWO-DIMENSIONAL ANALYSIS OF TRIODE-LIKE OPERATION OF JUNCTION GATE FET'S.YAMAGUCHI K; TOYABE T; KODERA H et al.1975; I.E.E.E. TRANS. ELECTRON. DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 11; PP. 1047-1049; BIBL. 6 REF.Article

COMPUTER STUDY ON GAAS SCHOTTKY BARRIER IMPATT DIODESNAKAMURA M; KODERA H; MIGITAKA M et al.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 6; PP. 663-667; BIBL. 10 REF.Serial Issue

GAAS DUAL-GATE SCHOTTKY-BARRIER FET'S FOR MICROWAVE FREQUENCIES.ASAI S; MURAI F; KODERA H et al.1975; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 10; PP. 897-904; BIBL. 14 REF.Article

THEORETICAL STUDY OF A CHANNEL-DOPED SEPARATE GATE SI MOSFET (SG-MOSFET) BY TWO-DIMENSIONAL COMPUTER SIMULATIONYAMAGUCHI K; TAKAHASHI S; KODERA H et al.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 1; PP. 117-120; BIBL. 7 REF.Article

OPTIMIZED DESIGN OF GAASFET'S FOR LOW NOISE MICROWAVE AMPLIFIERS.ASAI S; OKAZAKI S; KODERA H et al.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 6; PP. 463-470; BIBL. 15 REF.Article

TWO-DIMENSIONAL ANALYSIS OF VERTICAL JUNCTION GATE FET'S.YAMAGUCHI K; TOYABE T; KODERA H et al.1976; JAP. J. APPL. PHYS.; JAP.; DA. 1976; VOL. 15; SUPPL. 1; PP. 163-168; BIBL. 11 REF.; (CONF. SOLID STATE DEVICES. 7. PROC.; TOKYO; 1975)Conference Paper

DESIGN AND PERFORMANCE OF X-BAND OSCILLATORS WITH GAAS SCHOTTKY-GATE FIELD-EFFECT TRANSISTORS.MAEDA M; KIMURA K; KODERA H et al.1975; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1975; VOL. 23; NO 8; PP. 661-667; BIBL. 20 REF.Article

SUBMICROMETER GATE FABRICATION OF GAAS MESFET BY PLASMA ETCHINGTAKAHASHI S; MURAI F; KODERA H et al.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 10; PP. 1213-1218; BIBL. 9 REF.Article

SPACE-CHARGE-LIMITED CURRENTS IN POLY-N-VINYLCARBAZOLE FILMSKATO K; FUJIMOTO T; KODERA H et al.1975; CHEM. LETTERS; JAP.; DA. 1975; NO 1; PP. 63-66; BIBL. 12 REF.Article

SWITCHING SPEED AND POWER DISSIPATION OF PLANAR-TYPE GUNN DIODESNAKAMURA M; KURONO H; TOYABE T et al.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 1; PP. 75-83; H.T. 1; BIBL. 11 REF.Serial Issue

Poissons cyprinidés du Miocène inférieur de la Formation hachiya, préfecture de Gifu, JaponKODERA, H; NOMURA, T.1988, Num 14, pp 1-12, issn 0385-0900Article

A HALF-MICRON GATE GAAS FET FABRICATION BY CHEMICAL DRY ETCHING.TAKAHASHI S; MURAI F; KURONO H et al.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; SUPPL. 1; PP. 115-118; BIBL. 5 REF.; (CONF. SOLID STATE DEVICES. 8. PROC.; TOKYO; 1976)Conference Paper

Fiberoptic technology in HitachiYOSHINE, H; KODERA, H.Hitachi review. 1986, Vol 35, Num 4, pp 171-172, issn 0018-277XArticle

DEGRADATION MECHANISM OF GAAS MESFET'SMIZUISHI K; KURONO H; SATO H et al.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 7; PP. 1008-1014; BIBL. 7 REF.Article

Structure fine des dents pharyngiennes du coelacanthe (Latimeria chalumnae)SASAGAWA, I; ISHIYAMA, M; KODERA, H et al.1985, Vol 39, Num 2, pp 105-115, issn 0366-6611Article

Dry etching damage and activation ratio degradation in δ-doped AlGaAs/InGaAs high electron mobility transistorsTANIMOTO, T; KUDO, M; MORI, M et al.Japanese journal of applied physics. 1994, Vol 33, Num 2B, pp L260-L262, issn 0021-4922, 2Article

Optical transmitter and receiver modulesKODERA, H; IKUSHIMA, I; MAEDA, M et al.Hitachi review. 1984, Vol 33, Num 4, pp 203-208, issn 0018-277XArticle

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