HIGH-SPEED SOLDER PLATING BATHS = BAINS DE PLACAGE DE BRASURE TENDRE A GRANDE VITESSEKOHL PA.1981; PLAT. SURF. FINISH.; ISSN 0360-3164; USA; DA. 1981; VOL. 68; NO 8; PP. 45-48; BIBL. 5 REF.Article

SEMICONDUCTOR ELECTRODES. XVII: ELECTROCHEMICAL BEHAVIOR OF N- AND P-TYPE INP ELECTRODES IN ACETONITRILE SOLUTIONSKOHL PA; BARD AJ.1979; J. ELECTROCHEM. SOC.; USA; DA. 1979; VOL. 126; NO 4; PP. 598-603; BIBL. 14 REF.Article

SEMICONDUCTOR ELECTRODES. XVIII: LIQUID JUNCTION PHOTOVOLTAIC CELLS BASED ON N-GAAS ELECTRODES AND ACETONITRILE SOLUTIONSKOHL PA; BARD AJ.1979; J. ELECTROCHEM. SOC.; USA; DA. 1979; VOL. 126; NO 4; PP. 602-608; BIBL. 9 REF.Article

SEMICONDUCTOR ELECTRODES. 13. CHARACTERIZATION AND BEHAVIOR OF N-TYPE ZNO, CDS, AND GAP ELECTRODES IN ACETONITRILE SOLUTIONS.KOHL PA; BARD AJ.1977; J. AMER. CHEM. SOC.; U.S.A.; DA. 1977; VOL. 99; NO 23; PP. 7531-7539; BIBL. 32 REF.Article

PHOTOELECTROCHEMICAL ETCHING OF P-GAASOSTERMAYER FW JR; KOHL PA.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 1; PP. 76-78; BIBL. 13 REF.Article

SEMICONDUCTOR ELECTRODES. XI. BEHAVIOR OF N- AND P-TYPE SINGLE CRYSTAL SEMICONDUCTORS COVERED WITH THIN N-TIO₂ FILMS.KOHL PA; FRANK SN; BARD AJ et al.1977; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1977; VOL. 124; NO 2; PP. 225-229; BIBL. 22 REF.Article

SEMICONDUCTOR ELECTRODES. XV. PHOTOELECTROCHEMICAL CELLS WITH MIXED POLYCRYSTALLINE N-TYPE CDS-CDSE ELECTRODES.NOUFI RN; KOHL PA; BARD AJ et al.1978; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1978; VOL. 125; NO 3; PP. 375-379; BIBL. 29 REF.Article

SEMICONDUCTOR ELECTRODES. XIV. ELECTROCHEMISTRY AND ELECTROLUMINESCENCE ATN-TYPE TIO₂ IN AQUEOUS SOLUTIONS.NOUFI RN; KOHL PA; FRANK SN et al.1978; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1978; VOL. 125; NO 2; PP. 246-252; BIBL. 22 REF.Article

A LONG-WAVE LENGTH, ANNULAR IN⁰,53)GA⁰,47)AS P-I-N PHOTODETECTIONFORREST SR; KOHL PA; PANOCK R et al.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 12; PP. 415-417; BIBL. 8 REF.Article