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au.\*:("KOLODIN LG")

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PROPRIETES DE RECOMBINAISON ET ELECTRIQUES DU SILICIUM DE TYPE P IRRADIE PAR ELECTRONSKOLODIN LG; MUKASHEV BN.1980; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1980; VOL. 14; NO 9; PP. 1756-1759; BIBL. 24 REF.Article

DETERMINATION OF THE ELECTRICAL LEVEL OF VACANCY IN ELECTRON IRRADIATED P-TYPE SILICONMUKASHEV BN; FROLOV VV; KOLODIN LG et al.1982; PHYS. LETT. SECT. A; ISSN 0375-9601; NLD; DA. 1982; VOL. 91; NO 7; PP. 358-360; BIBL. 9 REF.Article

CINETIQUE DU RECUIT DES DEFAUTS D'IRRADIATION DANS SI P AUX TEMPERATURES 150-300 KMUKASHEV BN; KOLODIN LG; NUSUPOV K KH et al.1978; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1978; VOL. 12; NO 6; PP. 1174-1178; BIBL. 25 REF.Article

STUDY OF PRIMARY AND SECONDARY RADIATION DEFECTS FORMATION AND ANNEALING IN P-TYPE SILICONMUKASHEV BN; KOLODIN LG; NUSSUPOV KH et al.1980; RAD. EFFECTS; GBR; DA. 1980; VOL. 46; NO 1-2; PP. 79-84; BIBL. 28 REF.Article

DEFAUTS D'IRRADIATION DANS LE SILICIUM DE TYPE P IRRADIE PAR DES PROTONS D'ENERGIE 30 MEVGRIGOR'EVA GM; KOLODIN LG; KREJNIN LB et al.1977; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1977; VOL. 11; NO 11; PP. 2176-2180; BIBL. 27 REF.Article

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