au.\*:("KOZA, M. A")
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Highly resolved excitonic spectra in GaAs/AlGaAs superlattices grown by organometallic chemical vapor depositionSKROMME, B. J; BHAT, R; KOZA, M. A et al.Applied physics letters. 1988, Vol 52, Num 12, pp 990-992, issn 0003-6951Article
Extrinsic photoluminescence in coupled-well GaAs/AlGaAs superlatticesSKROMME, B. J; BHART, R; KOZA, M. A et al.Solid state communications. 1988, Vol 66, Num 5, pp 543-547, issn 0038-1098Article
An outbreak of Burkholderia (formerly pseudomonas) cepacia respiratory tract colonization and infection associated with neubulized albuterol therapyHAMILL, R. J; HOUSTON, E. D; GEORGHIOU, P. R et al.Annals of internal medicine. 1995, Vol 122, Num 10, pp 762-766, issn 0003-4819Article
High-performance uncooled 1.3-μm AlxGaIn1-x-yAs/InP strained-layer quantum-well lasers for subscriber loop applications : Strained-layer optoelectronic materials and devicesCHUNG-EN ZAH; RAJARAM BHAT; ZHENG WANG et al.IEEE journal of quantum electronics. 1994, Vol 30, Num 2, pp 511-523, issn 0018-9197Article
High-performance 1.3 μm AlGaInAs/InP strained quantum well lasers grown by organometallic chemical vapor depositionBHAT, R; ZAH, C. E; WANG, Z et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 858-865, issn 0022-0248Conference Paper
Low threshold 1.5μm tensile-strained single quantum well lasersZAH, C. E; BHAT, R; PATHAK, B et al.Electronics Letters. 1991, Vol 27, Num 16, pp 1414-1416, issn 0013-5194Article
Novel etching technique for a buried heterostructure GaInAs/AIgaInAs quantum-well laser diodeKASUKAWA, A; BHAT, R; CANEAU, C et al.Applied physics letters. 1991, Vol 59, Num 11, pp 1269-1271, issn 0003-6951Article
A novel technique for the preservation of gratings in InP and InGAAsP and for the simultaneous preservation of InP, InGaAs, and InGaAsP in OMCVDBHAT, R; KOZA, M. A; ZAH, C. E et al.Journal of crystal growth. 1990, Vol 107, Num 1-4, pp 871-877, issn 0022-0248Conference Paper
High-speed metal-semiconductor-metal waveguide photodetector on InPSOOLE, J. B. D; SCHUMACHER, H; ESAGUI, R et al.Applied physics letters. 1989, Vol 55, Num 21, pp 2173-2175, issn 0003-6951Article
High speed monolithic WDM detector for 1.5μm fibre bandSOOLE, J. B. D; LEBLANC, H. P; ANDREADAKIS, N. C et al.Electronics Letters. 1995, Vol 31, Num 15, pp 1276-1277, issn 0013-5194Article
Simultaneous multiple wavelength operation of a multistripe array grating integrated cavity laserPOGUNTKE, K. R; SOOLE, J. B. D; SCHERER, A et al.Applied physics letters. 1993, Vol 62, Num 17, pp 2024-2026, issn 0003-6951Article
Interface control in GaAs/GaInP superlattices grown by MOCVDBHAT, R; KOZA, M. A; BRASIL, M. J. S. P et al.Journal of crystal growth. 1992, Vol 124, Num 1-4, pp 576-582, issn 0022-0248Conference Paper
Optically monitoring and controlling epitaxial growthASPNES, D. E; BHAT, R; PUDENSI, M. A. A et al.Journal of crystal growth. 1992, Vol 120, Num 1-4, pp 71-77, issn 0022-0248Conference Paper
Bonding by atomic rearrangement of InP/InGaAsP 1.5 μm wavelength lasers on GaAs substratesLO, Y. H; BHAT, R; HWANG, D. M et al.Applied physics letters. 1991, Vol 58, Num 18, pp 1961-1963, issn 0003-6951, 3 p.Article
Low-threshold and high-speed 1•5μm compressive-strained multiquantum well four-wavelength distributed-feedback laser arraysZAH, C. E; CHEUNG, K. W; LEE, T. P et al.Electronics Letters. 1991, Vol 27, Num 12, pp 1040-1042, issn 0013-5194, 3 p.Article
Butt-coupled InGaAs metal-semiconductor-metal waveguide photodetector formed by selective area regrowthSOOLE, J. B. D; SCHUMACHER, H; LEBLANC, H. P et al.Applied physics letters. 1990, Vol 56, Num 16, pp 1518-1520, issn 0003-6951Article
Orientation dependence of S,Zn,Si,Te and Sn doping in OMCVD growth of InP and GaAs : application to DH lasers and lateral p-n junction arrays grown on non-planar substratesBHAT, R; CANEAU, C; ZAH, C. E et al.Journal of crystal growth. 1990, Vol 107, Num 1-4, pp 772-778, issn 0022-0248Conference Paper
High-frequency performance of InGaAs metal-semiconductor-metal photodetectors at 1.55 and 1.3 μm wavelengthsSOOLE, J. B. D; SCHUMACHER, H; LEBLANC, H. P et al.Applied physics letters. 1989, Vol 55, Num 8, pp 729-731, issn 0003-6951, 3 p.Article
OMVPE grown GaInAs:C for HBTsCANEAU, C; BHAT, R; GOSWAMI, S et al.Journal of electronic materials. 1996, Vol 25, Num 3, pp 491-495, issn 0361-5235Conference Paper
High-performance InP reflection-grating wavelength multiplexerPOGUNTKE, K. R; SOOLE, J. B. D; LEBLANC, H. P et al.Electronics Letters. 1994, Vol 30, Num 6, pp 512-513, issn 0013-5194Article
Wavelength precision of monolithic InP grating multiplexer/demultiplexersSOOLE, J. B. D; BHAT, R; LEBLANC, H. P et al.Electronics Letters. 1994, Vol 30, Num 8, pp 664-666, issn 0013-5194Article
Selective organometallic vapor phase epitaxy of Ga and In compounds : a comparison of TMIn and TEGa versus TMIn and TMGaCANEAU, C; BHAT, R; CHANG, C. C et al.Journal of crystal growth. 1993, Vol 132, Num 3-4, pp 364-370, issn 0022-0248Article
1.5 μm GaInAs/AlGaInAs graded-index separate-confinement-heterostructure quantum well laser diodes grown by organometallic chemical vapor depositionKASUKAWA, A; RAJARAM BHAT; CANEAU, C et al.Japanese journal of applied physics. 1992, Vol 31, Num 5A, pp 1365-1371, issn 0021-4922, 1Article
1.5μm compressive-strained multiquantum-well 20-wavelength distributed-feedback laser arraysZAH, C. E; LIN, P. S. D; WU, T. C et al.Electronics Letters. 1992, Vol 28, Num 9, pp 824-826, issn 0013-5194Article
Studies on the selective OMVPE of (Ga,In)/(As,P)CANEAU, C; BHAT, R; FREI, M. R et al.Journal of crystal growth. 1992, Vol 124, Num 1-4, pp 243-248, issn 0022-0248Conference Paper
