au.\*:("KRAMBECK RH")
Results 1 to 6 of 6
Selection :
THE BURIED CHANNEL CHARGE COUPLED DEVICEWALDEN RH; KRAMBECK RH; STRAIN RJ et al.1972; BELL SYST. TECH. J.; U.S.A.; DA. 1972; VOL. 51; NO 7; PP. 1635-1640; BIBL. 9 REF.Serial Issue
A DOPED SURFACE TWO-PHASE CCDKRAMBECK RH; WALDEN RH; PICKAR KA et al.1972; BELL SYST. TECH. J.; U.S.A.; DA. 1972; VOL. 51; NO 8; PP. 1849-1866; BIBL. 9 REF.Serial Issue
A DOPED SURFACE TWO-PHASE CCD.KRAMBECK RH; WALDEN RH; PICKAR KA et al.1972; BELL SYST. TECH. J.; U.S.A.; DA. 1972; VOL. 51; NO 8; PP. 1849-1866; BIBL. 9 REF.Article
LOW FREQUENCY TRANSFER EFFICIENCY OF E-BEAM FABRICATED CONDUCTIVELY CONNECTED CHARGE-COUPED DEVICE.KRAMBECK RH; RETAJCZYK TF JR; YAU LD et al.1976; I.E.E.E. TRANS. ELECTRON. DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 2; PP. 239-248; BIBL. 9 REF.Article
A 4160-BIT C4D SERIAL MEMORY.KRAMBECK RH; RETAJCZYK TF JR; SILVERSMITH DJ et al.1974; I.E.E.E.J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1974; VOL. 9; NO 6; PP. 436-443; BIBL. 7 REF.Article
THE BURIED CHANNEL CHARGE COUPLED DEVICE.WALDEN RH; KRAMBECK RH; STRAIN RJ et al.1975; BULL. SYST. TECH. J.; U.S.A.; DA. 1975; VOL. 51; NO 7; PP. 1635-1640; BIBL. 9 REF.Article