Evidence for Fermi level shift in GaInAs/GaAs quantum wells upon nitrogen incorporationKUDRAWIEC, R; MISIEWICZ, J.Solid state communications. 2010, Vol 150, Num 3-4, pp 227-229, issn 0038-1098, 3 p.Article

Model of hopping excitons in GaInNAs: simulations of sharp lines in micro-photoluminescence spectra and their dependence on the excitation power and temperatureBARANOWSKI, M; LATKOWSKA, M; KUDRAWIEC, R et al.Journal of physics. Condensed matter (Print). 2011, Vol 23, Num 20, issn 0953-8984, 205804.1-205804.5Article

Optical properties of GaInNAs/GaAs quantum wells: character of optical transitions and carrier localisation effectKUDRAWIEC, R; MISIEWICZ, J; FISHER, M et al.Physica status solidi. A. Applied research. 2004, Vol 201, Num 2, pp 364-367, issn 0031-8965, 4 p.Conference Paper

Photoreflectance spectroscopy of semiconductor structures at hydrostatic pressure : A comparison of GaInAs/GaAs and GaInNAs/GaAs single quantum wellsKUDRAWIEC, R; MISIEWICZ, J.Applied surface science. 2006, Vol 253, Num 1, pp 80-84, issn 0169-4332, 5 p.Conference Paper

On photoluminescence and photoreflectance of 1-eV GaInNAs-on-GaAs epilayersPAVELESCU, E.-M; KUDRAWIEC, R; DUMITRESCU, M et al.Journal of luminescence. 2013, Vol 141, pp 67-70, issn 0022-2313, 4 p.Article

On the deepness of contactless electroreflectance probing in semiconductor structuresMOTYKA, M; KUDRAWIEC, R; MISIEWICZ, J et al.Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 2, pp 354-363, issn 1862-6300, 10 p.Conference Paper

Surface- and volume-related excitation of Eu-doped nanocrystalline GaN powdersPODHORODECKI, A; KUDRAWIEC, R; NYK, M et al.Optical materials (Amsterdam). 2009, Vol 31, Num 8, pp 1252-1255, issn 0925-3467, 4 p.Article

Carrier dynamics in type-II GaAsSb/GaAs quantum wellsBARANOWSKI, M; SYPEREK, M; KUDRAWIEC, R et al.Journal of physics. Condensed matter (Print). 2012, Vol 24, Num 18, issn 0953-8984, 185801.1-185801.7Article

Ammonothermal growth of GaN substratesDWILIVSKI, R; DORADZINSKI, R; GARCZYNSKI, J et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7602, issn 0277-786X, isbn 0-8194-7998-5 978-0-8194-7998-3, 1Vol, 76020C.1-76020C.10Conference Paper

Optical characterization of (In,Ga)(As,N) thin films grown by molecular beam epitaxy on non-(100) GaAs substratesIBANEZ, J; HENINI, M; KUDRAWIEC, R et al.Journal of crystal growth. 2007, Vol 301-302, pp 552-555, issn 0022-0248, 4 p.Conference Paper

Development of GaInNAsSb alloys : Growth, band structure, optical properties and applicationsHARRIS, James S; KUDRAWIEC, R; LORDI, V et al.Physica status solidi. B. Basic research. 2007, Vol 244, Num 8, pp 2707-2729, issn 0370-1972, 23 p.Article

Contactless electroreflectance of GaN_yAs_1-y/GaAs multi quantum wells : The conduction band offset and electron effective mass issuesKUDRAWIEC, R; MOTYKA, M; GLADYSIEWICZ, M et al.Solid state communications. 2006, Vol 138, Num 7, pp 365-370, issn 0038-1098, 6 p.Article

Characterization of nanocrystalline TiO₂-HfO₂ thin films prepared by low pressure hot target reactive magnetron sputteringDOMARADZKI, J; KACZMAREK, D; PROCIOW, E. L et al.Surface & coatings technology. 2006, Vol 200, Num 22-23, pp 6283-6287, issn 0257-8972, 5 p.Conference Paper

Photoreflectance and contactless electroreflectance spectroscopy of GaAs-based structures : The below band gap oscillation featuresKUDRAWIEC, R; MOTYKA, M; GLADYSIEWICZ, M et al.Applied surface science. 2006, Vol 253, Num 1, pp 266-270, issn 0169-4332, 5 p.Conference Paper

Enhancement in photoluminescence from 1 eV GaInNAs epilayers subject to 7 MeV electron irradiationPAVELESCU, E.-M; KUDRAWIEC, R; BALTATEANU, N et al.Semiconductor science and technology. 2013, Vol 28, Num 2, issn 0268-1242, 025020.1-025020.4Article

Contactless electroreflectance of ZnO layers grown by atomic layer deposition at low temperatureKUDRAWIEC, R; MISIEWICZ, J; WACHNICKI, L et al.Semiconductor science and technology. 2011, Vol 26, Num 7, issn 0268-1242, 075012.1-075012.5Article

Contactless electroreflectance of GaInN/AlInN multi quantum wells : The issue of broadening of optical transitionsKUDRAWIEC, R; GLADYSIEWICZ, M; MOTYKA, M et al.Microelectronics journal. 2009, Vol 40, Num 3, pp 392-395, issn 0959-8324, 4 p.Conference Paper

Electromodulation spectroscopy of the ground and excited state transitions in GaInN/AlInN multi-quantum wellsKUDRAWIEC, R; GLADYSIEWICZ, M; MISIEWICZ, J et al.Microelectronics journal. 2009, Vol 40, Num 4-5, pp 805-808, issn 0959-8324, 4 p.Conference Paper

Room temperature contactless electroreflectance characterization of InGaAs/InAs/GaAs quantum dot wafersMOTYKA, M; KUDRAWIEC, R; SEK, G et al.Semiconductor science and technology. 2006, Vol 21, Num 10, pp 1402-1407, issn 0268-1242, 6 p.Article

Optical and structural properties of sol-gel derived materials embedded in porous anodic aluminaGAPONENKO, N. V; MOLCHAN, I. S; PIRA, N. Li et al.Microelectronic engineering. 2005, Vol 81, Num 2-4, pp 255-261, issn 0167-9317, 7 p.Article

Luminescence from sol-gel-derived europium-doped films confined in mesoporous anodic aluminaMOLCHAN, I. S; GAPONENKO, N. V; KUDRAWIEC, R et al.Journal of the Electrochemical Society. 2004, Vol 151, Num 1, pp H16-H20, issn 0013-4651Article

Optical properties of an In_0.22Ga_0.78Sb/GaSb single quantum wellKUDRAWIEC, R; BRYJA, L; SEK, G et al.Crystal research and technology (1979). 2003, Vol 38, Num 3-5, pp 399-406, issn 0232-1300, 8 p.Conference Paper

Contactless electroreflectance, photoluminescence and time-resolved photoluminescence of GaInNAs quantum wells obtained by the MBE method with N-irradiationBARANOWSKI, M; KUDRAWIEC, R; SYPEREK, M et al.Semiconductor science and technology. 2011, Vol 26, Num 4, issn 0268-1242, 045012.1-045012.5Article

Properties and preparation of high quality, free-standing GaN substrates and study of spontaneous separation mechanismASHRAF, H; KUDRAWIEC, R; WEYHER, J. L et al.Journal of crystal growth. 2010, Vol 312, Num 16-17, pp 2398-2403, issn 0022-0248, 6 p.Article

Contactless electroreflectance study of band bending for undoped, Si-and Mg-doped GaN layers and AlGaN/GaN transistor heterostructuresKUDRAWIEC, R; MOTYKA, M; MISIEWICZ, J et al.Microelectronics journal. 2009, Vol 40, Num 2, pp 370-372, issn 0959-8324, 3 p.Conference Paper