Suppression of the floating-body effect in poly-Si thin-film transistors with self-aligned Schottky barrier source and ohmic body contact structureKUO, Po-Yi; CHAO, Tien-Sheng SR; LEI, Tan-Fu et al.IEEE electron device letters. 2004, Vol 25, Num 9, pp 634-636, issn 0741-3106, 3 p.Article

Poly-Si Thin-Film Transistor Nonvolatile Memory Using Ge Nanocrystals as a Charge Trapping Layer Deposited by the Low-Pressure Chemical Vapor DepositionKUO, Po-Yi; CHAO, Tien-Sheng; HUANG, Jyun-Siang et al.IEEE electron device letters. 2009, Vol 30, Num 3, pp 234-236, issn 0741-3106, 3 p.Article

Vertical n-Channel Poly-Si Thin-Film Transistors With Symmetric S/D Fabricated by Ni-Silicide-Induced Lateral-Crystallization TechnologyKUO, Po-Yi; CHAO, Tien-Sheng; LAI, Jiou-Teng et al.IEEE electron device letters. 2009, Vol 30, Num 3, pp 237-239, issn 0741-3106, 3 p.Article

Characteristics of self-aligned Si/Ge T-gate poly-Si thin-film transistors with high ON/OFF current ratioKUO, Po-Yi; CHAO, Tien-Sheng; HSIEH, Pei-Shan et al.I.E.E.E. transactions on electron devices. 2007, Vol 54, Num 5, pp 1171-1176, issn 0018-9383, 6 p.Article

High-performance poly-Si TFTs with fully Ni-self-aligned silicided S/D and gate structureKUO, Po-Yi; CHAO, Tien-Sheng; WANG, Ren-Jie et al.IEEE electron device letters. 2006, Vol 27, Num 4, pp 258-261, issn 0741-3106, 4 p.Article

The impact of deep Ni salicidation and NH₃ plasma treatment on nano-SOI FinFETsYOU, Hsin-Chiang; KUO, Po-Yi; KO, Fu-Hsiang et al.IEEE electron device letters. 2006, Vol 27, Num 10, pp 799-801, issn 0741-3106, 3 p.Article

Physical Mechanism of High-Programming-Efficiency Dynamic-Threshold Source-Side Injection in Wrapped-Select-Gate SONOS for NOR-Type Flash MemoryWANG, Kuan-Ti; CHAO, Tien-Sheng; HSIEH, Tsung-Min et al.IEEE electron device letters. 2009, Vol 30, Num 11, pp 1206-1208, issn 0741-3106, 3 p.Article

Characteristics of SONOS-Type Flash Memory With In Situ Embedded Silicon NanocrystalsCHIANG, Tsung-Yu; WU, Yi-Hong; MA, William Cheng-Yu et al.I.E.E.E. transactions on electron devices. 2010, Vol 57, Num 8, pp 1895-1902, issn 0018-9383, 8 p.Article

Novel Symmetric Vertical-Channel Ni-Salicided Poly-Si Thin-Film Transistors With High ON/OFF-Current RatioWU, Yi-Hong; KUO, Po-Yi; LU, Yi-Hsien et al.IEEE electron device letters. 2010, Vol 31, Num 11, pp 1233-1235, issn 0741-3106, 3 p.Article

Reliability Analysis of Symmetric Vertical-Channel Nickel-Salicided Poly-Si Thin-Film TransistorsWU, Yi-Hong; LIN, Je-Wei; LU, Yi-Hsien et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 8, pp 2160-2166, issn 0018-9383, 7 p.Article

Low-Temperature Polycrystalline-Silicon Tunneling Thin-Film Transistors With MILCCHEN, Yi-Hsuan; YEN, Li-Chen; CHANG, Tien-Shun et al.IEEE electron device letters. 2013, Vol 34, Num 8, pp 1017-1019, issn 0741-3106, 3 p.Article

SONOS memories with embedded silicon nanocrystals in nitrideLIU, Mei-Chun; CHIANG, Tsung-Yu; CHAO, Tien-Sheng et al.Semiconductor science and technology. 2008, Vol 23, Num 7, issn 0268-1242, 075033.1-075033.4Article