Theory of magnetoresistance in the Anderson-localised regime of semiconductorsKUROBE, A.Journal of physics. C. Solid state physics. 1986, Vol 19, Num 13, pp 2201-2216, issn 0022-3719Article

Simulation of saturation and relaxation of intersubband absorption in doped quantum wellsNEWSON, D. J; KUROBE, A.Applied physics letters. 1988, Vol 53, Num 25, pp 2516-2518, issn 0003-6951Article

Effect of residual doping on optimum structure of multiquantum-well optical modulatorsNEWSON, D. J; KUROBE, A.Electronics Letters. 1987, Vol 23, Num 9, pp 439-440, issn 0013-5194Article

Possibility of optical bistability due to resonant intersubband excitation in stepped modulation-doped quantum wellsNEWSON, D. J; KUROBE, A.Applied physics letters. 1987, Vol 51, Num 21, pp 1670-1672, issn 0003-6951Article

NOVEL FORMATION OF ANTI-BREDT OLEFINS FROM 2,3,4,5,6,7-HEXAHYDRO-1,6-METHANO-1H-4-BENZAZONIN-7-OLS.SHIOTANI S; KOMETANI T; KUROBE A et al.1976; J. ORG. CHEM.; U.S.A.; DA. 1976; VOL. 41; NO 26; PP. 4106-4108; BIBL. 11 REF.Article

The effect of conduction band non-parabolicity on inter-sub-band absorption in doped quantum wellsNEWSON, D. J; KUROBE, A.Semiconductor science and technology. 1988, Vol 3, Num 8, pp 786-790, issn 0268-1242Article

The growth of high mobility heterostructures on (311)B GaAsSIMMONS, M. Y; CHURCHILL, A. C; KIM, G. H et al.Microelectronics journal. 1995, Vol 26, Num 8, pp 897-902, issn 0959-8324Conference Paper

Détermination de l'eptazocine et de ses métabolites dans le plasma sanguin et l'urine de l'homme par chromatographie HPLC couplée à une détection électrochimiqueNOGAMI, Y; YOSHINO, M; KUROBE, A et al.Bunseki Kagaku. 1989, Vol 38, Num 8, pp 368-372, issn 0525-1931Article

Formation of strained-silicon layer on thin relaxed-SiGe/SiO₂/Si structure using SIMOX technologySUGIYAMA, N; MIZUNO, T; TAKAGI, S et al.Thin solid films. 2000, Vol 369, Num 1-2, pp 199-202, issn 0040-6090Conference Paper

Mobility modulation of two-dimensional hole gas in a p-type Si/SiGe modulation doped heterostructure by back-gatingTEZUKA, T; HATAKEYAMA, T; IMAI, S et al.Semiconductor science and technology. 1998, Vol 13, Num 12, pp 1477-1479, issn 0268-1242Article

The physics and fabrication of in situ back-gated (311)A hole gas heterojunctionsSIMMONS, M. Y; HAMILTON, A. R; KUROBE, A et al.Microelectronics journal. 1997, Vol 28, Num 8-10, pp 795-801, issn 0959-8324Conference Paper

Transport properties of a wide-quantum-well velocity modulation transistor structureKUROBE, A; CASTLETON, I. M; LINFIELD, E. H et al.Semiconductor science and technology. 1994, Vol 9, Num 9, pp 1744-1747, issn 0268-1242Article

Submillampere lasing of Zn-diffused mesa buried-hetero Al_xGa_1-xAs/GaAs multi-quantum-well lasers at 77KKUROBE, A; FURUYAMA, H; NARITSUKA, S et al.Electronics Letters. 1986, Vol 22, Num 21, pp 1117-1118, issn 0013-5194Article

Transport properties of two-dimensional electron gas in a strained-Si/SiGe heterostructure at low carrier densitiesHATAKEYAMA, T; TEZUKA, T; SUGIYAMA, N et al.Thin solid films. 2000, Vol 369, Num 1-2, pp 328-332, issn 0040-6090Conference Paper

Fabrication of nano-crystal silicon on SiO₂ using the agglomeration processSUGIYAMA, N; TEZUKA, T; KUROBE, A et al.Journal of crystal growth. 1998, Vol 192, Num 3-4, pp 395-401, issn 0022-0248Article

Lateral transport studies of coupled electron gasesPATEL, N. K; KUROBE, A; CASTLETON, I. M et al.Semiconductor science and technology. 1996, Vol 11, Num 5, pp 703-711, issn 0268-1242Article

Band filling in GaAs/AlGaAs multiquantum well lasers and its effect on the threshold currentRADHAKRISHNAN NAGARAJAN; KAMIYA, T; KUROBE, A et al.IEEE journal of quantum electronics. 1989, Vol 25, Num 6, pp 1161-1170, issn 0018-9197, 10 p.Article

Analysis and application of theoretical gain curves to the design of multi-quantum-well lasersMCILROY, P. W. A; KUROBE, A; UEMATSU, Y et al.IEEE journal of quantum electronics. 1985, Vol 21, Num 12, pp 1958-1963, issn 0018-9197Article

Origin of magnetocapacitance in the Anderson-localized regimeKUROBE, A; TAKEMORI, T; KAMIMURA, H et al.Physical review letters. 1984, Vol 52, Num 16, pp 1457-1460, issn 0031-9007Article

1 Gbit/s automatic-power-control-free zero-bias modulation of very-low threshold MQW laser diodesNAKAMURA, M; FURUYAMA, H; KUROBE, A et al.Electronics Letters. 1987, Vol 23, Num 25, pp 1352-1353, issn 0013-5194Article

Device structure and electrical characteristics of strained-Si-on-insulator (strained-SOI) MOSFETsTAKAGI, S; SUGIYAMA, N; MIZUNO, T et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 426-434, issn 0921-5107Conference Paper

Anisotropic magnetotransport in two-dimensional electron gases on (311)B GaAs substratesCHURCHILL, A. C; KIM, G. H; KUROBE, A et al.Journal of physics. Condensed matter (Print). 1994, Vol 6, Num 31, pp 6131-6138, issn 0953-8984Article

Wave function deformation and mobility of a two-dimensional electron gas in a backgated GaAs-AlGaAs heterostructureKUROBE, A; FROST, J. E. F; GRIMSHAW, M. P et al.Applied physics letters. 1993, Vol 62, Num 20, pp 2522-2524, issn 0003-6951Article

Effect of residual doping on the quantum confined Stark effect in p-i-n multiple quantum well structuresTEZUKA, T; KUROBE, A; ASHIZAWA, Y et al.Surface science. 1992, Vol 267, Num 1-3, pp 518-522, issn 0039-6028Conference Paper