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Results 1 to 25 of 36

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DETERMINATION OF BORON CONCENTRATION PROFILES IN SILICON FROM 10B(N, ALPHA )7LI REACTION PRODUCT SPECTRAKVITEK J; HNATOWICZ V; KOTAS P et al.1976; RADIOCHEM. RADIOANAL. LETTERS; SWITZ.; DA. 1976; VOL. 24; NO 3; PP. 205-213; BIBL. 4 REF.Article

A TELESCOPE FOR ALPHA -PARTICLE SPECTROMETRY.KVITEK J; HOFFMANN J; KOSINA Z et al.1975; CZECHOSL. J. PHYS.; CZECHOSL.; DA. 1975; VOL. 25; NO 8; PP. 854-858; BIBL. 12 REF.Article

STUDY OF BORON IMPLANTATION IN AG-SI LAYER STRUCTURESPELIKAN L; RYBKA V; KREJCI P et al.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 72; NO 1; PP. 369-373; ABS. GER; BIBL. 6 REF.Article

TO THE POSSIBILITY OF ELEMENT DETERMINATION USING RADIATION CAPTURE OF 2 KEV NEUTRONSCERVENA J; KVITEK J; HONZATKO J et al.1979; RADIOCHEM. RADIOANAL. LETTERS; CHE; DA. 1979; VOL. 38; NO 5-6; PP. 321-324; BIBL. 2 REF.Article

DETERMINATION OF ARSENIC, ANTIMONY, AND BISMUTH IN SILICON USING 200 KEV ALPHA -PARTICLE BACKSCATTERINGHNATOWICZ V; KVITEK J; KREJCI P et al.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 74; NO 1; PP. 323-328; ABS. GER; BIBL. 8 REF.Article

THE USE OF THE NEUTRON INDUCED REACTION FOR BORON PROFILING IN SICERVENA J; HNATOWICZ V; HOFFMANN J et al.1981; NUCL. INSTRUM. METHODS PHYS. RES.; ISSN 502936; NLD; DA. 1981; VOL. 188; NO 1; PP. 185-189; BIBL. 9 REF.Article

STUDY OF DIFFUSION OF IMPURITIES IN SEMICONDUCTOR SILICON BY ACTIVATION ANALYSIS AND NUCLEAR REACTION METHODSKOTAS P; OBRUSNIK I; KVITEK J et al.1976; J. RADIOANAL. CHEM.; SWITZ.; DA. 1976; VOL. 30; NO 2; PP. 475-488; BIBL. 21 REF.Article

DOSAGE DE B ET LI AU MOYEN D'UNE REACTION (N,ALPHA )BISCHOF J; DLOUHY Z; KVITEK J et al.1972; JADERN. ENERG.; CESKOSL.; DA. 1972; VOL. 18; NO 9; PP. 296-298; ABS. ANGL.; BIBL. 13 REF.Serial Issue

Oxygen incorporation in polyethylene and polypropylene implanted with F+, As+ and Is+ ions at high doseHNATOWICZ, V; KVITEK, J; SVORCIK, V et al.Applied physics. A, Solids and surfaces. 1994, Vol 58, Num 4, pp 349-352, issn 0721-7250Article

The influence of implantation conditions on the surface structure of polypropyleneSVORCIK, V; RYBKA, V; HNATOWICZ, V et al.Journal of applied polymer science. 1993, Vol 49, Num 7, pp 1299-1301, issn 0021-8995Article

Long term changes of polypropylene implanted with I+ ionsHNATOWICZ, V; KVITEK, J; SVORCIK, V et al.European polymer journal. 1995, Vol 31, Num 5, pp 449-451, issn 0014-3057Article

Oxidation of polyethylene implanted with As ions to different extentsHNATOWICZ, V; KVITEK, J; SVORCIK, V et al.European polymer journal. 1993, Vol 29, Num 9, pp 1255-1258, issn 0014-3057Article

A Pascal program for the least-squares evaluation of standard RBS spectraHNATOWICZ, V; HAVRANEK, V; KVITEK, J et al.Computer physics communications. 1992, Vol 72, Num 2-3, pp 295-303, issn 0010-4655Article

Electrical resistivity of polymers modified by ion irradiationSVORCIK, V; RYBKA, V; HNATOWICZ, V et al.Materials letters (General ed.). 1994, Vol 19, Num 5-6, pp 329-332, issn 0167-577XArticle

Dual implantation of silicon with boron and argon ionsPOPOK, V; HNATOWICZ, V; KVITEK, J et al.Physica status solidi. A. Applied research. 1994, Vol 141, Num 1, pp 93-98, issn 0031-8965Article

Determination of the range profiles of boron implanted into Si and SiO2RYBKA, V; HNATOWICZ, V; KVITEK, J et al.Physica status solidi. A. Applied research. 1984, Vol 83, Num 1, pp 165-171, issn 0031-8965Article

Oxygen incorporation in polyethylene implanted with 150 keV Sb+ ionsHNATOWICZ, V; KVITEK, J; SVORCIK, V et al.Czechoslovak journal of physics. 1994, Vol 44, Num 6, pp 621-627, issn 0011-4626Article

Ion implantation into polyethyleneSVORCIK, V; RYBKA, V; ENDRST, R et al.Journal of the Electrochemical Society. 1993, Vol 140, Num 2, pp 542-544, issn 0013-4651Article

Application of iterative deconvolution procedures for evaluation of boron depth profilesCERVENA, J; HNATOWICZ, V; KVITEK, J et al.Czechoslovak journal of physics. 1985, Vol 35, Num 4, pp 413-419, issn 0011-4626Article

Anomalous diffusion of iodine ions into polypropylene implanted with F+ and I+ ionsHNATOWICZ, V; KVITEK, J; SVORCIK, V et al.Journal of applied polymer science. 1995, Vol 55, Num 3, pp 451-454, issn 0021-8995Article

Modifications of polypropylene induced by the implantation of iodine ionsHNATOWICZ, V; HAVRANEK, V; KVITEK, J et al.Japanese journal of applied physics. 1993, Vol 32, Num 4, pp 1810-1813, issn 0021-4922, 1Article

Surface modification of polyethylene and polypropylene by ion implantationSVORCIK, V; RYBKA, V; ENDRST, R et al.Journal of applied polymer science. 1993, Vol 49, Num 11, pp 1939-1942, issn 0021-8995Article

Depth distribution of boron and radiation defects in silicon dual implanted with B+ and N+ ionsODZHAEV, V. B; POPOK, V. N; CERVENA, J et al.Physica status solidi. A. Applied research. 1995, Vol 147, Num 1, pp 91-97, issn 0031-8965Article

Ion implantation enhanced adhesion of polypropyleneSVORCIK, V; RYBKA, V; SEIDL, P et al.Materials letters (General ed.). 1992, Vol 12, Num 6, pp 434-436, issn 0167-577XArticle

Multielemental trace analysis by proton induced X-ray fluorescenceHNATOWICZ, V; KVITEK, J; DZMURAN, R et al.Czechoslovak journal of physics. 1984, Vol 34, Num 12, pp 1315-1323, issn 0011-4626Article

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