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Introduction to focused sesssion on anomalous relaxationYONEZAWA, F.Journal of non-crystalline solids. 1996, Vol 198200, pp 503-506, issn 0022-3093, 1Conference Paper

Defect-pool model for doped a-Si:HSCHMAL, J.Journal of non-crystalline solids. 1996, Vol 198200, pp 387-390, issn 0022-3093, 1Conference Paper

Electronic structure of amorphous semiconductors studied by both X-ray photoelectron and soft X-ray spectroscopiesSENEMAUD, C.Journal of non-crystalline solids. 1996, Vol 198200, pp 85-90, issn 0022-3093, 1Conference Paper

Incorporation and thermal stability of hydrogen in amorphous silicon and germaniumBEYER, W.Journal of non-crystalline solids. 1996, Vol 198200, pp 40-45, issn 0022-3093, 1Conference Paper

Material and device consideration for high efficiency a-Si alloy-based multijunction cellsGUHA, S.Journal of non-crystalline solids. 1996, Vol 198200, pp 1076-1080, issn 0022-3093, 2Conference Paper

High rate deposition of μc-Si with plasma gun CVDIMAJYO, N.Journal of non-crystalline solids. 1996, Vol 198200, pp 935-939, issn 0022-3093, 2Conference Paper

Amorphous semiconductors - Science and technologySHIMIZU, Tatsuo; YONEZAWA, Fumiko; NITTA, Shoji et al.Journal of non-crystalline solids. 1996, Vol 198200, issn 0022-3093, 667 p., 2Conference Proceedings

Amorphous semiconductors - Science and technologySHIMIZU, Tatsuo; YONEZAWA, Fumiko; NITTA, Shoji et al.Journal of non-crystalline solids. 1996, Vol 198200, issn 0022-3093, 647 p., 1Conference Proceedings

A model for the photo-electro ionic phenomena in chalcogenide glassesANIYA, M.Journal of non-crystalline solids. 1996, Vol 198200, pp 762-765, issn 0022-3093, 2Conference Paper

Electronic processes in hydrogenated amorphous carbonROBERTSON, J.Journal of non-crystalline solids. 1996, Vol 198200, pp 615-618, issn 0022-3093, 2Conference Paper

Lifetime distribution of photoluminescence in a-Si:H based alloysOHEDA, H.Journal of non-crystalline solids. 1996, Vol 198200, pp 284-287, issn 0022-3093, 1Conference Paper

The moving-photocarrier-grating technique for the determination of transport parameters in thin film semiconductorsHUNDHAUSEN, M.Journal of non-crystalline solids. 1996, Vol 198200, pp 146-152, issn 0022-3093, 1Conference Paper

A rigid band model for recombination in a-Si alloysWANG, T.-H; SEARLE, T. M.Journal of non-crystalline solids. 1996, Vol 198200, pp 280-283, issn 0022-3093, 1Conference Paper

Amorphous silicon optical spectrum analyzer for the visible rangeCAPUTO, D; IRRERA, F; PALMA, F et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 1172-1175, issn 0022-3093, 2Conference Paper

Anomalous relaxation in fractal and disordered systemsFUJIWARA, S; YONEZAWA, F.Journal of non-crystalline solids. 1996, Vol 198200, pp 507-511, issn 0022-3093, 1Conference Paper

Atomic force microscopy and scanning tunneling microscopy studies on the growth mechanism of a-Si:H film on graphite substrateMATSUSE, M; TSUBOI, S; ARAKANE, T et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 787-791, issn 0022-3093, 2Conference Paper

Density of states and photoconductivity light degradation in a-Si:H at different temperaturesMARIUCCI, L; SINNO, G; MINARINI, C et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 482-485, issn 0022-3093, 1Conference Paper

Direct determination of the quadratic electro-optic coefficient in an a-Si:H based waveguideZELIKSON, M; WEISER, K; CHACK, A et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 107-110, issn 0022-3093, 1Conference Paper

Distribution of lifetime of photoluminescence in band-edge modulated a-Si1-xNx:H filmsOGIHARA, C; ISHIMURA, H; KINOSHITA, T et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 255-258, issn 0022-3093, 1Conference Paper

Electric field heated electrons in a-Si:H : new featuresJUSKA, G; ARLAUSKAS, K; KOCKA, J et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 202-205, issn 0022-3093, 1Conference Paper

Electronic structure and light induced degradation of amorphous silicon-germanium alloysZHONG, F; CHEN, C.-C; COHEN, J. D et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 572-576, issn 0022-3093, 1Conference Paper

Enhancement of the deposition rate of a-Si:H by introduction of an electronegative molecule into a silane dischargeIKEDA, T; OSBORNE, I. S; HATA, N et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 987-990, issn 0022-3093, 2Conference Paper

Hydrogen in siliconDAVIES, E. A.Journal of non-crystalline solids. 1996, Vol 198200, pp 1-10, issn 0022-3093, 1Conference Paper

Improved stability of a-Si:H fabricated from SiH2Cl2 by ECR hydrogen plasmaAZUMA, M; YOKOI, T; SHIMIZU, I et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 419-422, issn 0022-3093, 1Conference Paper

Interpretation of mechanism determining field effect mobility in a-Si:H TFT based on surface reaction modelCHIDA, Y; KONDO, M; MATSUDA, A et al.Journal of non-crystalline solids. 1996, Vol 198200, pp 1121-1124, issn 0022-3093, 2Conference Paper

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